Design of a broadband passive X-band double-balanced mixer in SiGe HBT technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 235-242 ◽  
Author(s):  
Rasmus S. Michaelsen ◽  
Tom K. Johansen ◽  
Kjeld M. Tamborg ◽  
Vitaliy Zhurbenko
Keyword(s):  
Local Oscillator ◽  
Center Frequency ◽  
High Loss ◽  
Sige Hbt ◽  
Lumped Element ◽  
X Band ◽  
Passive Mixing ◽  
Marchand Balun ◽  
Better Than ◽  
Balanced Mixer

In this paper, a passive double-balanced mixer in SiGe HBT technology is presented. Owing to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode-connected HBTs. The mixer uses lumped element Marchand baluns on both the local oscillator (LO) and the radio frequency (RF) port. A break out of the Marchand balun is measured. This demonstrates good phase and magnitude match of 0.7° and 0.11 dB, respectively. The Marchand baluns are broadband with a measured 3 dB bandwidth of 6.4 GHz, while still having a magnitude imbalance better than 0.4 dB and a phase imbalance better than 5°. Unfortunately with a rather high loss of 2.5 dB, mainly due to the low Q-factor of the inductors used. The mixer is optimized for use in doppler radars and is highly linear with a 1 dB compression point above 12 dBm IIP2of 66 dBm. The conversion gain at the center frequency of 8.5 GHz is −9.8 dB at an LO drive level of 15 dBm. The whole mixer is very broadband with 3 dB bandwidth from 7 to 12 GHz covering the entire X-band. The LO–IF, RF–IF, and RF–LO isolation is better than 46, 36, and 36 dB, respectively, in the entire band of operation.

scholarly journals An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

2016 ◽  
Vol 9 (5) ◽  
pp. 965-976
Author(s):  
Rasmus S. Michaelsen ◽  
Tom K. Johansen ◽  
Kjeld M. Tamborg ◽  
Vitaliy Zhurbenko ◽  
Lei Yan
Keyword(s):  
Power Level ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Critical Parameters ◽  
Center Frequency ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Marchand Balun ◽  
Balanced Mixer

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

Compact dual-mode microstrip bandpass filter based on slotted square patch resonator

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Karthie S. ◽  
Zuvairiya Parveen J. ◽  
Yogeshwari D. ◽  
Venkadeshwari E.
Keyword(s):  
Bandpass Filter ◽  
Filter Design ◽  
Center Frequency ◽  
Dual Mode ◽  
Content Type ◽  
Transmission Zeros ◽  
Compact Size ◽  
Mode Response ◽  
Better Than ◽  
Good Agreement

Purpose The purpose of this paper is to present the design of a compact microstrip bandpass filter (BPF) in dual-mode configuration loaded with cross-loop and square ring slots on a square patch resonator for C-band applications. Design/methodology/approach In the proposed design, the dual-mode response for the filter is realized with two transmission zeros (TZs) by the insertion of a perturbation element at the diagonal corner of the square patch resonator with orthogonal feed lines. Such TZs at the edges of the passband result in better selectivity for the proposed BPF. Moreover, the cross-loop and square ring slots are etched on a square patch resonator to obtain a miniaturized BPF. Findings The proposed dual-mode microstrip filter fabricated in RT/duroid 6010 substrate using PCB technology has a measured minimum insertion loss of 1.8 dB and return loss better than 24.5 dB with a fractional bandwidth (FBW) of 6.9%. A compact size of 7.35 × 7.35 mm2 is achieved for the slotted patch resonator-based dual-mode BPF at the center frequency of 4.76 GHz. As compared with the conventional square patch resonator, a size reduction of 61% is achieved with the proposed slotted design. The feasibility of the filter design is confirmed by the good agreement between the measured and simulated responses. The performance of the proposed filter structure is compared with other dual-mode filter works. Originality/value In the proposed work, a compact dual-mode BPF is reported with slotted structures. The conventional square patch resonator is deployed with cross-loop and square ring slots to design a dual-mode filter with a square perturbation element at its diagonal corner. The proposed filter exhibits compact size and favorable performance compared to other dual-mode filter works reported in literature. The aforementioned design of the dual-mode BPF at 4.76 GHz is suitable for applications in the lower part of the C-band.

Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems

2017 ◽  
Author(s):  
P. Scaramuzza ◽  
C. Rubino ◽  
M. Tiebout ◽  
M. Caruso ◽  
M. Ortner ◽  
...  
Keyword(s):  
Class Ab ◽  
Sige Hbt ◽  
Radar Systems ◽  
X Band

scholarly journals A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2198
Author(s):  
Zhichao Li ◽  
Shiheng Yang ◽  
Samuel B. S. Lee ◽  
Kiat Seng Yeo
Keyword(s):  
Output Power ◽  
Effective Conductivity ◽  
Building Blocks ◽  
Cmos Technology ◽  
Center Frequency ◽  
Cmos Process ◽  
Two Stage ◽  
Power Added Efficiency ◽  
X Band ◽  
Compact Size

For higher integration density, X-band power amplifiers (PAs) with CMOS technology have been widely discussed in recent publications. However, with reduced power supply voltage and device size, it is a great challenge to design a compact PA with high output power and power-added efficiency (PAE). In the proposed design, a 40-nm standard CMOS process is used for higher integration with other RF building blocks, compared with other CMOS PA designs with larger process node. Transistor cells are designed with neutralization capacitors to increase stability and gain performance of the PA. As a trade-off among gain, output power, and PAE, the transistor cells in driving stage and power stage are biased for class A and class AB operation, respectively. Both transistor cells consist of two transistors working in differential mode. Furthermore, transformer-based matching networks (TMNs) are used to realize a two-stage X-band CMOS PA with compact size. The PA achieves an effective conductivity (EC) of 117.5, which is among the highest in recently reported X-band PAs in CMOS technology. The PA also attains a saturated output power (Psat) of 20.7 dBm, a peak PAE of 22.4%, and a gain of 25.6 dB at the center frequency of 10 GHz under a 1 V supply in 40-nm CMOS.

An X-band gain-enhanced bidirectional antenna array using strip-loaded dielectric resonator operating in TE3δ1 mode

2020 ◽  
Vol 12 (9) ◽  
pp. 915-921
Author(s):  
Ling-Ling Yang ◽  
Yan-Hui Ke ◽  
Jian-Xin Chen
Keyword(s):  
Antenna Array ◽  
Dielectric Resonator ◽  
Side Wall ◽  
High Order Mode ◽  
Yagi Antenna ◽  
X Band ◽  
Metallic Strip ◽  
Marchand Balun ◽  
First Time ◽  
Good Agreement

AbstractA bidirectional dielectric resonator (DR) antenna array using back-to-back quasi-Yagi antenna configuration is proposed and implemented for the first time. The DR operating at higher-order TE3δ1 mode is used as a magnetic dipole, applying for the driver of quasi-Yagi antenna. Due to the high-order mode employment, the antenna gain can be enhanced. By partially loading the metallic strip on the side wall of the DR, the gain can be further enhanced. In addition, a simple dual Marchand balun is constructed for feeding the two quasi-Yagi antennas directly for bidirectional radiation. To verify the design concept, a prototype operating at the X-band is fabricated and measured. Good agreement between the simulated and measured results can be observed.

Design, Fabrication and Test of Modified Septum Antennas for Satellite Telecommunication

Frequenz ◽  
2018 ◽  
Vol 72 (7-8) ◽  
pp. 301-313 ◽  
Author(s):  
Mohammad Fazaelifar ◽  
Shahrokh Jam ◽  
Raheleh Basiri ◽  
H. Reza Azadi
Keyword(s):  
Axial Ratio ◽  
Beam Width ◽  
Center Frequency ◽  
Low Loss ◽  
Ground Station ◽  
Large Bandwidth ◽  
Low Weight ◽  
Measurement Results ◽  
Novel Design ◽  
Better Than

Abstract In this paper at first, the ordinary septum polarizer has been designed and used for parabolic reflector feed in Ground station antenna. Next, a novel design of modified septum polarizer with wider beam-width is proposed for satellite antenna. Compactness, low weight, large bandwidth, high TX/RX isolation, low axial ratio as well as low loss are the advantages of the septum polarizer. The designed antenna has high purity circular polarization ( $\left| {AR} \right| \le 1.6dB$ ) and low return loss. The frequency bandwidth of the antenna is about 27 % in the center frequency 11 GHz and the TX/RX isolation is better than 32 dB. Finally the septum polarizer, modified septum polarizer and reflector are fabricated and tested and there were good agreement between simulation and measurement results.

High-power monolithic AlGaN/GaN high electron mobility transistor switches

2009 ◽  
Vol 1 (4) ◽  
pp. 339-345 ◽  
Author(s):  
Vincenzo Alleva ◽  
Andrea Bettidi ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Mauro Ferrari ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Power ◽  
Integrated Circuit ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Power Handling Capability ◽  
Better Than

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

Compact dual mode X-band SIW bandpass filter with wide spurious suppression using split square ring slot resonator

Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sandhya Ramalingam ◽  
Umma Habiba Hyder Ali ◽  
Sharmeela Chenniappan
Keyword(s):  
Bandpass Filter ◽  
Equivalent Circuit Model ◽  
Circuit Board ◽  
Center Frequency ◽  
Design System ◽  
Dual Mode ◽  
Content Type ◽  
X Band ◽  
Compact Size ◽  
Spurious Suppression

Purpose This paper aims to design a dual mode X-band substrate integrated waveguide (SIW) bandpass filter in the conventional SIW structure. A pair of back-to-back square and split ring resonator is introduced in the single-layer SIW bandpass filter. The various coupling configurations of SIW bandpass filter using split square ring slot resonator is designed to obtain dual resonant mode in the passband. It is shown that the measured results agree with the simulated results to meet compact size, lower the transmission coefficient, better reflection coefficient, sharp sideband rejection and minimal group delay. Design/methodology/approach A spurious suppression of wideband response is suppressed using an open stub in the transmission line. The width and length of the stub are tuned to suppress the wideband spurs in the stopband. The measured 3 dB bandwidth is from 8.76 to 14.24 GHz with a fractional bandwidth of 48.04% at a center frequency of 11.63 GHz, 12.59 GHz. The structure is analyzed using the equivalent circuit model, and the simulated analysis is based on an advanced design system software. Findings This paper discusses the characteristics of resonator below the waveguide cut-off frequency with their working principles and applications. Considering the difficulties in combining the resonators with a metallic waveguide, a new guided wave structure – the SIW is designed, which is synthesized on a planar substrate with linear periodic arrays of metallized via based on the printed circuit board. Originality/value This study has investigated the wave propagation problem of the SIW loaded by square ring slot-loaded resonator. The electric dipole nature of the resonator has been used to achieve a forward passband in a waveguide environment. The proposed filters have numerous advantages such as high-quality factor, low insertion loss, easy to integrate with the other planar circuits and, most importantly, compact size.

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