In Situ Electrical Monitoring of Methylated DNA Based on Its Conformational Change to G-Quadruplex Using a Solution-Gated Field-Effect Transistor

Turning on superconductivity in a topologically nontrivial insulator may provide a route to search for non-Abelian topological states. However, existing demonstrations of superconductor-insulator switches have involved only topologically trivial systems. Here we report reversible, in situ electrostatic on-off switching of superconductivity in the recently established quantum spin Hall insulator monolayer tungsten ditelluride (WTe2). Fabricated into a van der Waals field-effect transistor, the monolayer’s ground state can be continuously gate-tuned from the topological insulating to the superconducting state, with critical temperaturesTcup to ~1 kelvin. Our results establish monolayer WTe2as a material platform for engineering nanodevices that combine superconducting and topological phases of matter.

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Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2262135 ◽

2013 ◽

Vol 60 (7) ◽

pp. 2135-2141 ◽

Cited By ~ 7

Author(s):

Bin Liu ◽

Chunlei Zhan ◽

Yue Yang ◽

Ran Cheng ◽

Pengfei Guo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Boron Doped ◽

Effect Transistor

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Ultrasensitive in Situ Label-Free DNA Detection Using a GaN Nanowire-Based Extended-Gate Field-Effect-Transistor Sensor

Analytical Chemistry ◽

10.1021/ac102489y ◽

2011 ◽

Vol 83 (6) ◽

pp. 1938-1943 ◽

Cited By ~ 102

Author(s):

Chin-Pei Chen ◽

Abhijit Ganguly ◽

Ching-Ying Lu ◽

Ting-Yu Chen ◽

Chun-Chiang Kuo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Dna Detection ◽

Label Free ◽

Free Dna ◽

Gan Nanowire ◽

Effect Transistor

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Improved modulation contrast of asymmetric Fabry–Perot field-effect transistor self-electro-optic effect devices by in situ thickness corrections

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588912 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2252 ◽

Cited By ~ 1

Author(s):

J. M. Kuo

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Electro Optic ◽

Fabry Perot ◽

Effect Transistor

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Comparison of Duplex and Quadruplex Folding Structure Adenosine Aptamers for Carbon Nanotube Field Effect Transistor Aptasensors

Nanomaterials ◽

10.3390/nano11092280 ◽

2021 ◽

Vol 11 (9) ◽

pp. 2280

Author(s):

Hong Phan T. Nguyen ◽

Thanihaichelvan Murugathas ◽

Natalie O. V. Plank

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Dissociation Constants ◽

High Sensitivity ◽

Quadruplex Structure ◽

G Quadruplex ◽

Effect Transistor ◽

Folding Structure

Carbon nanotube field effect transistor (CNT FET) aptasensors have been investigated for the detection of adenosine using two different aptamer sequences, a 35-mer and a 27-mer. We found limits of detection for adenosine of 100 pM and 320 nM for the 35-mer and 27-mer aptamers, with dissociation constants of 1.2 nM and 160 nM, respectively. Upon analyte recognition the 35-mer adenosine aptamer adopts a compact G-quadruplex structure while the 27-mer adenosine aptamer changes to a folded duplex. Using the CNT FET aptasensor platform adenosine could be detected with high sensitivity over the range of 100 pM to 10 µM, highlighting the suitability of the CNT FET aptasensor platform for high performance adenosine detection. The aptamer restructuring format is critical for high sensitivity with the G-quadraplex aptasensor having a 130-fold smaller dissociation constant than the duplex forming aptasensor.

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