Giant Piezoelectric Coefficient in Lead-Free BiFe0.975Ti0.025O3–CaTiO3 Solid Solution Thin Films

Author(s):  
Mingfang Shu ◽  
Bingbing Yang ◽  
Miao Liu ◽  
Shunjin Zhu ◽  
Sumei Li ◽  
...  

2013 ◽  
Vol 1547 ◽  
pp. 45-52
Author(s):  
Albertus D. Handoko ◽  
Gregory K. L. Goh

ABSTRACTLead free niobate solid solutions can exhibit piezoelectric properties comparable to that of lead zirconate titanate piezoelectrics in the vicinity of its morphotropic phase boundary (MPB). Here we describe how (Na,K)NbO3 and (Na,K)NbO3-LiTaO3 solid solution thin films can be grown epitaxially by the hydrothermal method at temperatures of 200 °C or below in water and be made ferro- and piezoelectrically active by a simple 2 step post growth treatment.



Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.



2007 ◽  
Vol 358 (1) ◽  
pp. 175-180 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Ken-Ichi Kakimoto ◽  
Hitoshi Ohsato ◽  
Takashi Iijima


Author(s):  
Sung Sik Won ◽  
Masami Kawahara ◽  
Hyunseung Kim ◽  
Joonhee Lee ◽  
Chang Kyu Jeong ◽  
...  


2017 ◽  
Vol 47 ◽  
pp. 71-78
Author(s):  
H. Mechri ◽  
Ahmed Haddad ◽  
M. Zergoug ◽  
Mohammed Azzaz

Commercial copper and iron powders were used as starting materials. These powders were mechanically alloyed to obtain Cu(100-x) Fex supersaturated mixture. The milling duration was chosen in such a way as to obtain a nanostructured mixture and to form a supersaturated solid solution of CuFe; the powder mixture was used to deposit CuFe on a glass substrate. The elaboration of our films has been carried out using thermal evaporation process (physical vapor deposition) under 1 × 10-6 mbar vacuum from an electrically heated tungsten boat, using the supersaturated solid solution Cu(100-x) Fex powder obtained by mechanical alloying. The films deposition has been done on glass substrates. In this study, we present the composition effect on the structural and magnetic proprieties of Cu(100-x) Fex powder and thin films. The chemical composition, structural and magnetic proprieties of milled powders and thin films were examined by SEM, TEM, XRD, XRF and VSM.



2017 ◽  
Vol 5 (2) ◽  
pp. 1700972 ◽  
Author(s):  
Chao Li ◽  
Lingyan Wang ◽  
Wen Chen ◽  
Lu Lu ◽  
Hu Nan ◽  
...  


2014 ◽  
Vol 40 (2) ◽  
pp. 3755-3759 ◽  
Author(s):  
Tao Chen ◽  
Hongli Wang ◽  
Ting Zhang ◽  
Guangchang Wang ◽  
Jifang Zhou ◽  
...  


2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.



Author(s):  
Jingwei Zhao ◽  
Zhonghua Yao ◽  
Zhijian Wang ◽  
Ning Zhang ◽  
Hua Hao ◽  
...  


Author(s):  
Feier Ni ◽  
Kun Zhu ◽  
Liuxue Xu ◽  
Yang Liu ◽  
Hao Yan ◽  
...  


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