scholarly journals Continuous Manufacturing of High Quality Pharmaceutical Cocrystals Integrated with Process Analytical Tools for In-Line Process Control

2016 ◽  
Vol 16 (6) ◽  
pp. 3425-3434 ◽  
Author(s):  
Hiren G. Moradiya ◽  
Muhammad T. Islam ◽  
Nikolaos Scoutaris ◽  
Sheelagh A. Halsey ◽  
Babur Z. Chowdhry ◽  
...  
2015 ◽  
Vol 821-823 ◽  
pp. 528-532 ◽  
Author(s):  
Dirk Lewke ◽  
Karl Otto Dohnke ◽  
Hans Ulrich Zühlke ◽  
Mercedes Cerezuela Barret ◽  
Martin Schellenberger ◽  
...  

One challenge for volume manufacturing of 4H-SiC devices is the state-of-the-art wafer dicing technology – the mechanical blade dicing which suffers from high tool wear and low feed rates. In this paper we discuss Thermal Laser Separation (TLS) as a novel dicing technology for large scale production of SiC devices. We compare the latest TLS experimental data resulting from fully processed 4H-SiC wafers with results obtained by mechanical dicing technology. Especially typical product relevant features like process control monitoring (PCM) structures and backside metallization, quality of diced SiC-devices as well as productivity are considered. It could be shown that with feed rates up to two orders of magnitude higher than state-of-the-art, no tool wear and high quality of diced chips, TLS has a very promising potential to fulfill the demands of volume manufacturing of 4H-SiC devices.


2018 ◽  
Vol 19 (2) ◽  
pp. 876-888 ◽  
Author(s):  
Steven A. Ross ◽  
Adam Ward ◽  
Pat Basford ◽  
Mark McAllister ◽  
Dennis Douroumis

2010 ◽  
Vol 201 (1) ◽  
pp. 231-238 ◽  
Author(s):  
Roberto da Costa Quinino ◽  
Emerson C. Colin ◽  
Linda Lee Ho

2012 ◽  
Vol 41 (10) ◽  
pp. 1813-1832 ◽  
Author(s):  
Lupércio F. Bessegato ◽  
Roberto C. Quinino ◽  
Luiz H. Duczmal ◽  
Linda Lee Ho

2014 ◽  
Vol 2014 (1) ◽  
pp. 000155-000160
Author(s):  
Jin You Zao ◽  
Bong Yin Yen ◽  
Lim Beng Kuan ◽  
John Thornell ◽  
Darcy Hart ◽  
...  

Wafer Bumping In-line Process control of Wafer-Level Chip Scale Package (WLCSP) requires accurate measurement of bump features during processing. These bump features include critical dimension of Redistribution Layer (RDL), Under Bump Metal (UBM) and transparent polyimide thickness. For a 4-Mask Layer Cu plated WLCSP, accurate feature thickness measurement is required for both the Redistribution Layer (RDL) and Under Bump Metal (UBM) to ensure consistent delivery of good electrical performance and package reliability. This is especially important as WLCSP is moving towards finer feature size and pitch to meet increasing demand for smaller form factor. This paper reports the development of an automated Critical Dimension (CD) measurement solution capable of measuring features at pre-defined locations on different topology both under sampling and full inspection mode on wafer. The solution is fully scalable to meet the requirement of high product-mix HVM environment, by highly adaptive to different features on different products for which measurement needs to be automated for effective process control.


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