Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of SnS

Author(s):  
Yih-Ren Chang ◽  
Naoki Higashitarumizu ◽  
Hayami Kawamoto ◽  
Fu-Hsien Chu ◽  
Chien-Ju Lee ◽  
...  
2014 ◽  
Vol 126 (25) ◽  
pp. 6543-6547 ◽  
Author(s):  
Awei Zhuang ◽  
Jia-Jun Li ◽  
You-Cheng Wang ◽  
Xin Wen ◽  
Yue Lin ◽  
...  

2018 ◽  
Vol 83 (02) ◽  
pp. 281-291 ◽  
Author(s):  
Jens Götze ◽  
Harry Berek ◽  
Klaus Schäfer

AbstractAgates with spectacular micro-structural features were found in volcanic rocks at several occurrences in the Saar-Nahe region (Germany). These agates include spirals of several tens up to several hundreds of μm in size within zones lacking the characteristic structural agate banding. A combined mineralogical study by polarising microscopy, scanning electron microscopy, cathodoluminescence microscopy and spectroscopy, and electron backscatter diffraction provided evidence that the spirals consist of well-ordered trigonal α-quartz, whereas the surrounding matrix is composed of strongly disordered or amorphous SiO2 phases. The quartz micro-crystals show a systematic rotation of the crystal orientation perpendicular to the direction of the spiral loops indicating helical growth.It is assumed that the spiral growth is initiated by dislocations with a screw component. The lacking symmetry of the strongly disordered or amorphous matrix initiated a curved development by a screw dislocation in a system far from equilibrium. The atoms/molecules are packed into spiral layers, which is energetically favoured in comparison with the incorporation into plane crystal faces. Such self-organisation growth and polymerisation initiated by a screw dislocation can produce variable spiral morphologies sometimes resembling living forms.


2014 ◽  
Vol 53 (25) ◽  
pp. 6425-6429 ◽  
Author(s):  
Awei Zhuang ◽  
Jia-Jun Li ◽  
You-Cheng Wang ◽  
Xin Wen ◽  
Yue Lin ◽  
...  

2013 ◽  
Vol 740-742 ◽  
pp. 189-192 ◽  
Author(s):  
S. Harada ◽  
Yuji Yamamoto ◽  
Kazuaki Seki ◽  
Toru Ujihara

Reduction of threading screw dislocation without polytype transformation from 4H-SiC was performed by the combination of step-flow growth and spiral growth. On a vicinal 4H-SiC seed crystal, threading screw dislocations are converted to Frank-type stacking faults by step-flow during solution growth. As the growth proceeds, the defects are excluded to the crystal. Thus utilizing the conversion, high quality SiC crystal growth without threading screw dislocations is expected to achieve. However, at the same time, polytype transformation is caused by the occurrence of 2D nucleation. By using the special shape of seed crystal, we successfully grew high quality 4H-SiC crystal without threading screw dislocation and polytype transformation.


Author(s):  
E. L. Thomas ◽  
S. L. Sass

In polyethylene single crystals pairs of black and white lines spaced 700-3,000Å apart, parallel to the [100] and [010] directions, have been identified as microsector boundaries. A microsector is formed when the plane of chain folding changes over a small distance within a polymer crystal. In order for the different types of folds to accommodate at the boundary between the 2 fold domains, a staggering along the chain direction and a rotation of the chains in the plane of the boundary occurs. The black-white contrast from a microsector boundary can be explained in terms of these chain rotations. We demonstrate that microsectors can terminate within the crystal and interpret the observed terminal strain contrast in terms of a screw dislocation dipole model.


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