scholarly journals Surface Termination Dependent Work Function and Electronic Properties of Ti3C2Tx MXene

2019 ◽  
Vol 31 (17) ◽  
pp. 6590-6597 ◽  
Author(s):  
Thorsten Schultz ◽  
Nathan C. Frey ◽  
Kanit Hantanasirisakul ◽  
Soohyung Park ◽  
Steven J. May ◽  
...  
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Surface Termination

Tailoring the ultrafast and nonlinear photonics of MXenes through elemental replacement

Nanoscale ◽  
2021 ◽  
Author(s):  
Hualong Chen ◽  
Lingfeng Gao ◽  
Omar A Al-Hartomy ◽  
Feng Zhang ◽  
Ahmed A. Al Ghamdi ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Surface Termination ◽  
Chemical Surface ◽  
Elemental Compositions ◽  
New Generation ◽  
Unique Chemical ◽  
Nonlinear Photonics

Due to the outstanding electronic properties, unique chemical surface termination units and richness elemental compositions, MXenes have become promising candidates for developing new generation optoelectronic devices. However, there was still...

scholarly journals Post-Annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

2021 ◽  
Author(s):  
Yuanwei Jiang ◽  
Shuangying Cao ◽  
Linfeng Lu ◽  
Guanlin Du ◽  
Yinyue Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Electronic Properties ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Crystalline Silicon Solar Cells ◽  
Post Annealing ◽  
Si Solar Cells ◽  
Optical And Electronic Properties ◽  
Large Work

Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100oC shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

Controlling of the electronic properties of WS2 and graphene oxide heterostructures from first-principles calculations

2017 ◽  
Vol 5 (1) ◽  
pp. 201-207 ◽  
Author(s):  
Mingye Yang ◽  
Lu Wang ◽  
Tingjun Hou ◽  
Youyong Li
Keyword(s):  
Graphene Oxide ◽  
Work Function ◽  
Band Gap ◽  
Electronic Properties ◽  
Structural Stability ◽  
First Principles ◽  
First Principles Calculations ◽  
Oxide Heterostructures

We investigated the structural stability and electronic properties of WS2 and graphene oxide (GO) heterostructures via first-principles calculations. It is found that the band gap and the work function of the WS2/GO heterostructures can be efficiently tuned by changing the oxygen functionals and its concentrations.

Surface properties in an external electric field

1991 ◽  
Vol 334 (1635) ◽  
pp. 527-538 ◽  
Keyword(s):  
Electric Field ◽  
Work Function ◽  
Electronic Properties ◽  
External Electric Field ◽  
Surface Properties ◽  
Field Dependence ◽  
Effective Charge ◽  
Image Plane ◽  
Embedding Method ◽  
Surface Displacements

This paper reviews recent calculations on the effect of an external electric field on surface electronic properties, in particular using the embedding method for solving the Schrödinger equation at the surface. The shape of the screening charge and its field dependence are discussed, and the results are compared with experiments in which the image plane is determined. The force on the surface atoms in the field is given in terms of an effective charge, which also determines the work-function variation with surface displacements. This relationship can lead to a surface instability if the effective charge is big enough.

Patterning PEDOT:PSS and tailoring its electronic properties by water-vapour-assisted nanoimprint lithography

RSC Advances ◽  
2014 ◽  
Vol 4 (64) ◽  
pp. 34014-34025 ◽  
Author(s):  
Andrea Radivo ◽  
Enrico Sovernigo ◽  
Marco Caputo ◽  
Simone Dal Zilio ◽  
Tsegaye Endale ◽  
...  
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Water Vapour ◽  
Nanoimprint Lithography ◽  
Strong Enhancement

Nanopatterning PEDOT:PSS by a water-vapour-assisted nanoimprinting process results in a strong enhancement of conductivity and decrease of work function.

Role of Surfaces and Interfaces for the Electronic Properties of Conducting Oxides

2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Surface Band ◽  
Band Bending ◽  
Conducting Oxides ◽  
Degenerate Semiconductors ◽  
Surfaces And Interfaces

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.

Edge dominated electronic properties of MoS2/graphene hybrid 2D materials: edge state, electron coupling and work function

2017 ◽  
Vol 5 (20) ◽  
pp. 4845-4851 ◽  
Author(s):  
Meng Guo ◽  
Yanmei Yang ◽  
Yanhua Leng ◽  
Li Wang ◽  
Huomin Dong ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Work Function ◽  
Electronic Properties ◽  
Density Functional ◽  
2D Materials ◽  
Density Functional Theory Calculations ◽  
Edge State ◽  
Binding Pattern ◽  
Functional Theory ◽  
State Electron

The binding pattern, electronic properties and work function of MoS2 nanostructures stacked on a graphene substrate have been studied through density functional theory calculations.

Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

2011 ◽  
Vol 4 (11) ◽  
pp. 115104 ◽  
Author(s):  
Hirokazu Fukidome ◽  
Shunsuke Abe ◽  
Ryota Takahashi ◽  
Kei Imaizumi ◽  
Syuya Inomata ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Epitaxial Graphene ◽  
Surface Termination ◽  
Structural And Electronic Properties

DFT Study on Anatase TiO2 Nanowires: Structure and Electronic Properties As Functions of Size, Surface Termination, and Morphology

2010 ◽  
Vol 114 (29) ◽  
pp. 12389-12400 ◽  
Author(s):  
Amilcare Iacomino ◽  
Giovanni Cantele ◽  
Fabio Trani ◽  
Domenico Ninno
Keyword(s):  
Electronic Properties ◽  
Anatase Tio2 ◽  
Dft Study ◽  
Tio2 Nanowires ◽  
Surface Termination

Highly air-stable, n-doped conjugated polymers achieved by dimeric organometallic dopants

2021 ◽  
Author(s):  
Yu Yamashita ◽  
Samik Jhulki ◽  
Dinesh Bhardwaj ◽  
Elena Longhi ◽  
Shohei Kumagai ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Work Function ◽  
Electronic Properties ◽  
Chemical Doping ◽  
Doped Polymers ◽  
Molecular Semiconductors

Chemical doping is a key process for controlling the electronic properties of molecular semiconductors, including their conductivity and work function. A common limitation of n-doped polymers is their instability under...

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