Influence of Oxygen Defects and Their Evolution on the Ferromagnetic Ordering and Band Gap of Mn-Doped ZnO Films

Mn doped ZnO films with different doping concentration were synthesized by sol gel method using the spin coating technique. Zn1-xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The quantity of Mn in the sol was synthesized with undoped ZnO, 2%, 4%, 6% and 8 % of Mn doped ZnO with an annealing temperature of 500°C. The FESEM images showed many spherical shaped nanoparticles on the cross-sectional of the films. The optical properties were characterized using UV-Vis where the transmittance and band gap value were affected by certain amount of Mn concentration. These films achieve tunable band gap characteristics by means of changing the dopant concentration. It shows an initial decrease of band gap for small concentrations of Mn, followed by an increase at higher Mn doping concentrations.

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Influence of Doping Concentrations of Sol Gel Derived Zn1-xMnxO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.403-408.753 ◽

2011 ◽

Vol 403-408 ◽

pp. 753-757

Author(s):

Affa Rozana Abdul Rashid ◽

P. Susthitha Menon ◽

Sahbudin Shaari

Keyword(s):

Band Gap ◽

Annealing Temperature ◽

Dopant Concentration ◽

Sol Gel ◽

Zno Films ◽

Gap Characteristics ◽

Doped Zno ◽

Mn Concentration ◽

Mn Doped ◽

Tunable Band Gap

Undoped and Mn doped ZnO films with different percentage of doping concentration (2%, 4%, 6% and 8%) were synthesized by sol gel method with an annealing temperature of 400°C. As to investigate the physical properties and microstructures, the samples are characterized using FESEM. The surface morphology images on the films showed many spherical shaped nanoparticles and separate uniformly. Meanwhile, the optical properties were characterized using UV-Vis where the transmittance and band gap value were affected by certain amount of Mn concentration. These films achieve tunable band gap characteristics by means of changing the dopant concentration. At lower concentration, 2% and 4% of Mn, the band gap is reducing compare to undoped ZnO. At higher doping for 6% and 8% of Mn, the bang gap suddenly increased.

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Wide Band Gap Al and In Co-doped ZnO Films for Near-Infrared Plasmonic Application

Plasmonics ◽

10.1007/s11468-021-01434-5 ◽

2021 ◽

Author(s):

Soumya Kannoth ◽

Packia Selvam Irulappan ◽

Sandip Dhara ◽

Sankara Narayanan Potty

Keyword(s):

Band Gap ◽

Near Infrared ◽

Wide Band ◽

Zno Films ◽

Wide Band Gap ◽

Doped Zno ◽

Co Doped

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Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.560-561.820 ◽

2012 ◽

Vol 560-561 ◽

pp. 820-824

Author(s):

Yue Zhi Zhao ◽

Fei Xiong ◽

Guo Mian Gao ◽

Shi Jing Ding

Keyword(s):

Thin Films ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

Flat Surfaces ◽

Atomic Force ◽

Mn Content ◽

Doped Zno ◽

Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

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