Large Facet-Specific Built-in Potential Differences Affecting Trap State Densities and Carrier Lifetimes of GaAs Wafers

2020 ◽  
Vol 124 (39) ◽  
pp. 21577-21582
Author(s):  
Chih-Shan Tan ◽  
Lih-Juann Chen ◽  
Michael H. Huang
Keyword(s):  
Trap State ◽  
Carrier Lifetimes ◽  
State Densities

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

2010 ◽  
Vol 96 (10) ◽  
pp. 102910 ◽  
Author(s):  
Yoontae Hwang ◽  
Roman Engel-Herbert ◽  
Nicholas G. Rudawski ◽  
Susanne Stemmer
Keyword(s):  
Trap State ◽  
State Densities

Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence

2013 ◽  
Vol 102 (18) ◽  
pp. 182108 ◽  
Author(s):  
C. R. Haughn ◽  
K. J. Schmieder ◽  
J. M. O. Zide ◽  
A. Barnett ◽  
C. Ebert ◽  
...  
Keyword(s):  
Trap State ◽  
Time Resolved ◽  
State Densities ◽  
Time Resolved Photoluminescence

Trap-Induced Dispersive Transport and Dielectric Loss in PbS Nanoparticle Films

2017 ◽  
Vol 231 (1) ◽  
Author(s):  
Alina Chanaewa ◽  
Katharina Poulsen ◽  
Alexander Gräfe ◽  
Christoph Gimmler ◽  
Elizabeth von Hauff
Keyword(s):  
Dielectric Loss ◽  
Deep Trap ◽  
State Density ◽  
Trap States ◽  
Trap State ◽  
Dispersive Transport ◽  
Surface Trap ◽  
Different Types ◽  
State Densities ◽  
Pbs Nanoparticle

AbstractIn this work, we investigate the electrical and dielectric response of lead sulfide (PbS) nanoparticle (NP) films with impedance spectroscopy. In particular, the influence of the ligand passivation on the surface trap state density of PbS NPs is demonstrated by comparing two different types of ligands: ethane-1,2-dithiol (EDT) and 3-sulfanylpropanoic acid (MPA). We observe that the MPA treatment passivates the PbS surface more efficiently than EDT. By analyzing the dielectric loss spectra, we are able to visualize shallow trap states in the bulk of PbS-EDT films and correlate this with the dispersive response observed in the impedance spectra. Evidence of deep trap states is revealed for both PbS-EDT and PbS-MPA diodes. Under illumination, the PbS-MPA and PbS-EDT films demonstrate almost identical trap profiles, showing solely the deep trap state densities. We conclude that the deep traps are related to the stoichiometry of the PbS NPs.

scholarly journals Enhancing moisture tolerance in efficient hybrid 3D/2D perovskite photovoltaics

2018 ◽  
Vol 6 (5) ◽  
pp. 2122-2128 ◽  
Author(s):  
Teck Ming Koh ◽  
Vignesh Shanmugam ◽  
Xintong Guo ◽  
Swee Sien Lim ◽  
Oliver Filonik ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
High Efficiency ◽  
Trap State ◽  
Successful Strategy ◽  
2D Structure ◽  
State Densities ◽  
The Stability ◽  
Improve Stability

Hybrid 3D/2D perovskites combine the high efficiency of 3D perovskites and the stability of 2D perovskites, and possess longer photoluminescence lifetimes, lower trap-state densities and enhanced moisture tolerance. The hybrid 3D/2D structure is a successful strategy to improve stability without sacrificing conversion efficiency.

Extra long electron–hole diffusion lengths in CH3NH3PbI3−xClx perovskite single crystals

2017 ◽  
Vol 5 (33) ◽  
pp. 8431-8435 ◽  
Author(s):  
Fengying Zhang ◽  
Bin Yang ◽  
Yajuan Li ◽  
Weiqiao Deng ◽  
Rongxing He
Keyword(s):  
Single Crystals ◽  
Diffusion Length ◽  
Energy Levels ◽  
Trap State ◽  
Electron Hole ◽  
Carrier Transfer ◽  
State Densities

Both trap-state densities and energy levels affect carrier transfer, resulting in a maximum diffusion length of 380 μm in CH3NH3PbI3−xClx (x = 0.005).

Spatially Non-uniform Trap State Densities in Solution-Processed Hybrid Perovskite Thin Films

2016 ◽  
Vol 7 (4) ◽  
pp. 715-721 ◽  
Author(s):  
Sergiu Draguta ◽  
Siddharatha Thakur ◽  
Yurii V. Morozov ◽  
Yuanxing Wang ◽  
Joseph S. Manser ◽  
...  
Keyword(s):  
Thin Films ◽  
Trap State ◽  
Solution Processed ◽  
Hybrid Perovskite ◽  
State Densities

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

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