Doping-Induced Room Temperature Stabilization of Metastable β-Ag2WO4 and Origin of Visible Emission in α- and β-Ag2WO4: Low Temperature Photoluminescence Studies

2016 ◽  
Vol 120 (13) ◽  
pp. 7265-7276 ◽  
Author(s):  
Santosh Kumar Gupta ◽  
Kathi Sudarshan ◽  
Partha Sarathi Ghosh ◽  
Saurabh Mukherjee ◽  
Ramakant Mahadeo Kadam
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Visible Emission ◽  
Temperature Stabilization ◽  
Photoluminescence Studies ◽  
Low Temperature Photoluminescence

Optical Properties of Doped Cd1−xMnxTe

1986 ◽  
Vol 89 ◽  
Author(s):  
Y. Lansari ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
P. Becia ◽  
D. Kaiser
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Spectral Range ◽  
Room Temperature ◽  
Far Infrared ◽  
Optical Quality ◽  
Structural Quality ◽  
Reflectance Measurements ◽  
Low Temperature Photoluminescence

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

OPTICAL PROPERTIES OF CdTe/ZnTe ULTRATHIN QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1667-1670 ◽  
Author(s):  
M. GARCÍA-ROCHA ◽  
I. HERNÁNDEZ-CALDERÓN
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Diffusion Length ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Low Temperature Photoluminescence

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.

The luminescent properties of CuAlO2

2014 ◽  
Vol 2 (37) ◽  
pp. 7859-7868 ◽  
Author(s):  
Daragh Byrne ◽  
Aidan Cowley ◽  
Nick Bennett ◽  
Enda McGlynn
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Luminescent Properties ◽  
Photoluminescence Properties ◽  
Low Temperature Photoluminescence

The room temperature Raman, photoluminescence and low temperature photoluminescence properties are examined to give a deeper understanding of CuAlO2.

Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

2004 ◽  
Vol 815 ◽  
Author(s):  
M. Yoganathan ◽  
A. Gupta ◽  
E. Semenas ◽  
E. Emorhokpor ◽  
C. Martin ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Room Temperature ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Intrinsic Defect ◽  
Defect Level ◽  
Low Temperature Photoluminescence

AbstractSemi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions

1998 ◽  
Vol 510 ◽  
Author(s):  
Hirokazu Sanpei ◽  
Takayuki Shima ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Yasuhiro Fukuzawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Carbon Doping ◽  
Co Doping ◽  
Hall Effect Measurements ◽  
Low Temperature Photoluminescence

AbstractThe role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH+ and CH3+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH3+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼1018 cm−3

Low‐temperature photoluminescence studies of mercuric‐iodide photodetectors

1989 ◽  
Vol 66 (6) ◽  
pp. 2578-2584 ◽  
Author(s):  
R. B. James ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
J. M. Markakis ◽  
A. Y. Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mercuric Iodide ◽  
Photoluminescence Studies ◽  
Low Temperature Photoluminescence

Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates

1995 ◽  
Vol 395 ◽  
Author(s):  
H. Morkoç ◽  
W. Kim ◽  
Ö. Aktas ◽  
A. Salvador ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Room Temperature ◽  
Stimulated Emission ◽  
Lattice Match ◽  
Photoluminescence Emission ◽  
Stacking Order ◽  
Near Ultraviolet ◽  
Side Pumping ◽  
Low Temperature Photoluminescence

ABSTRACTGaN films and GaN/AlGaN heterostructures have been gro wn by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be ∼90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.

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