The luminescent properties of CuAlO2

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

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Heterogeneous Strain Relaxation in GaAs on Si (100)

MRS Proceedings ◽

10.1557/proc-116-251 ◽

1988 ◽

Vol 116 ◽

Cited By ~ 5

Author(s):

A. Freundlich ◽

G. Neu ◽

A. Leycuras ◽

R. Carles ◽

C. Verie

Keyword(s):

Residual Stress ◽

Low Temperature ◽

Room Temperature ◽

Strain Relaxation ◽

Photoluminescence Excitation ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Low Temperature Photoluminescence ◽

Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

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OPTICAL PROPERTIES OF CdTe/ZnTe ULTRATHIN QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY

Surface Review and Letters ◽

10.1142/s0218625x02004189 ◽

2002 ◽

Vol 09 (05n06) ◽

pp. 1667-1670 ◽

Cited By ~ 7

Author(s):

M. GARCÍA-ROCHA ◽

I. HERNÁNDEZ-CALDERÓN

Keyword(s):

Optical Properties ◽

Low Temperature ◽

Quantum Wells ◽

Gaas Substrate ◽

Room Temperature ◽

Diffusion Length ◽

Substrate Surface ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Low Temperature Photoluminescence

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.

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