Nature of Defect States within Amorphous NPB Investigated through Drive-Level Capacitance Profiling

2018 ◽  
Vol 123 (1) ◽  
pp. 165-174 ◽  
Author(s):  
Hu-Sheng Pang ◽  
Hui Xu ◽  
Chao Tang ◽  
Ling-Kun Meng ◽  
Yan Ding ◽  
...  
Keyword(s):  
Drive Level ◽  
Defect States

The Electronic Structure of a-Si,Ge:H Alloys

1994 ◽  
Vol 336 ◽  
Author(s):  
F. Zhong ◽  
J.D. Cohen ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Thermal Emission ◽  
Drive Level ◽  
Optical Methods ◽  
Defect States ◽  
Thermal Transitions ◽  
Defect Band ◽  
Time Resolved ◽  
Photocurrent Spectroscopy ◽  
First Time ◽  
Negative Signal

ABSTRACTWe have carried out a detailed study of the energy distribution of deep defects for high quality glow discharge a-Si,Ge:H alloys using both thermal emission and optical Methods: drive-level capacitance profiling, transient photocapacitance and photocurrent plus modulation photocurrent spectroscopy. Four distinct bands of transitions involving defect states have been identified: two associated with thermal transitions, and the other two related to optical transitions. We have, for the first time, observed a negative signal in the photocapacitance spectra at photon energies near 1.2eV. This striking aspect verifies the presence of a distinct defect band above Ep from which electron thermal emission is greatly suppressed. Our Measurements also disclose a fairly narrow defect band below the Fermi level which contrasts with the defect properties observed in a-Si:H. Time resolved photocapacitance spectra indicate that this defect band exhibits configuration relaxation.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

EPR spectra and defect states in glasses of the GexS100-x system

1982 ◽  
Vol 47 (7) ◽  
pp. 1787-1793 ◽  
Author(s):  
Miloslav Frumar ◽  
Gustáv Plesch ◽  
Eva Černošková ◽  
Václav Černý ◽  
Ladislav Tichý ◽  
...  
Keyword(s):  
Experimental Data ◽  
Epr Spectra ◽  
Defect States ◽  
Composition Region ◽  
Active Defect ◽  
Temperature Conditions ◽  
Defect Centres

Glasses of the GexS100-x system were studied in the region of 30 ⪬ x ⪬ 45. The concept of magnetically active defect centres was employed to account for the EPR spectra of pure samples as well as those doped with silver or iodine, prepared in different temperature conditions. In terms of this concept a consistent interpretation of the experimental data could be given for the composition region applied.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy

2021 ◽  
Vol 130 (1) ◽  
pp. 015704
Author(s):  
Hyunmin Hong ◽  
Kwang-Sik Jeong ◽  
Jun Hyung Lim ◽  
Kyoung Seok Son ◽  
Kwun-Bum Chung
Keyword(s):  
Thin Film ◽  
Quantitative Analysis ◽  
Thin Film Transistors ◽  
Current Transient ◽  
Defect States ◽  
Transient Spectroscopy ◽  
Amorphous Ingazno

Quantum Light Emission from Coupled Defect States in DNA-Functionalized Carbon Nanotubes

ACS Nano ◽  
2021 ◽  
Author(s):  
Yu Zheng ◽  
Younghee Kim ◽  
Andrew C. Jones ◽  
Gabrielle Olinger ◽  
Eric R. Bittner ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Light Emission ◽  
Defect States ◽  
Functionalized Carbon Nanotubes

Tune the Fluorescence and Electrochemiluminescence of Graphitic Carbon Nitride Nanosheets by Controlling the Defect States

2021 ◽  
Author(s):  
Yajie Jiao ◽  
Rongjing Hu ◽  
Qian Wang ◽  
Fengfu Fu ◽  
Lichan Chen ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Graphitic Carbon ◽  
Graphitic Carbon Nitride ◽  
Defect States ◽  
Carbon Nitride Nanosheets

scholarly journals Role of Chemistry and Crystal Structure on the Electronic Defect States in Cs-Based Halide Perovskites

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1032
Author(s):  
Anirban Naskar ◽  
Rabi Khanal ◽  
Samrat Choudhury
Keyword(s):  
Crystal Structure ◽  
Density Functional ◽  
Covalent Bond ◽  
Density Functional Theory Calculations ◽  
Antisite Defect ◽  
Defect States ◽  
Functional Theory ◽  
Electronic Defect ◽  
Constituent Elements

The electronic structure of a series perovskites ABX3 (A = Cs; B = Ca, Sr, and Ba; X = F, Cl, Br, and I) in the presence and absence of antisite defect XB were systematically investigated based on density-functional-theory calculations. Both cubic and orthorhombic perovskites were considered. It was observed that for certain perovskite compositions and crystal structure, presence of antisite point defect leads to the formation of electronic defect state(s) within the band gap. We showed that both the type of electronic defect states and their individual energy level location within the bandgap can be predicted based on easily available intrinsic properties of the constituent elements, such as the bond-dissociation energy of the B–X and X–X bond, the X–X covalent bond length, and the atomic size of halide (X) as well as structural characteristic such as B–X–B bond angle. Overall, this work provides a science-based generic principle to design the electronic states within the band structure in Cs-based perovskites in presence of point defects such as antisite defect.

Halide Engineering for Mitigating Ion Migration and Defect States in Hot-Cast Perovskite Solar Cells

2021 ◽  
Author(s):  
Ritesh Kant Gupta ◽  
Rabindranath Garai ◽  
Maimur Hossain ◽  
Anwesha Choudhury ◽  
Parameswar Krishnan Iyer
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Defect States ◽  
Ion Migration
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