scholarly journals Diffusion Path Reversibility Confirms Symmetry of Surface Barriers

2019 ◽  
Vol 123 (32) ◽  
pp. 19596-19601 ◽  
Author(s):  
German Sastre ◽  
Jörg Kärger ◽  
Douglas M. Ruthven
Keyword(s):  
Diffusion Path ◽  
Surface Barriers

Decoration technique and surface physics

1978 ◽  
Vol 36 (1) ◽  
pp. 436-437 ◽  
Author(s):  
H. Bethge
Keyword(s):  
Diffusion Path ◽  
Special Importance ◽  
Surface Physics ◽  
Step Structure ◽  
Initial Stage ◽  
Special Cases ◽  
Atomic Surface ◽  
The Mean ◽  
Bulk Structure ◽  
Decoration Technique

Besides the atomic surface structure, diverging in special cases with respect to the bulk structure, the real structure of a surface Is determined by the step structure. Using the decoration technique /1/ it is possible to image step structures having step heights down to a single lattice plane distance electron-microscopically. For a number of problems the knowledge of the monatomic step structures is important, because numerous problems of surface physics are directly connected with processes taking place at these steps, e.g. crystal growth or evaporation, sorption and nucleatlon as initial stage of overgrowth of thin films.To demonstrate the decoration technique by means of evaporation of heavy metals Fig. 1 from our former investigations shows the monatomic step structure of an evaporated NaCI crystal. of special Importance Is the detection of the movement of steps during the growth or evaporation of a crystal. From the velocity of a step fundamental quantities for the molecular processes can be determined, e.g. the mean free diffusion path of molecules.

Gastroretentive System of Fluvastatin Sodium by Using Natural Mucilage and Synthetic Polymer

2014 ◽  
Vol 4 (2) ◽  
Author(s):  
Umamaheswara G. ◽  
Anudeep D.
Keyword(s):  
Half Life ◽  
Release Kinetics ◽  
Kinetic Studies ◽  
Diffusion Path ◽  
Synthetic Polymer ◽  
In Vitro Dissolution ◽  
Direct Compression ◽  
Drug Content ◽  
Biological Half Life

Fluvastatin sodium is a novel compound used as cholesterol lowering agent which acts through the inhibition of 3- hydroxyl-3- methyl glutaryl- coenzyme A (HMG-Co A) reductase. It has short biological half life (1-3h) in humans required a dosing frequency of 20 to 40mg twice a day. Due to its short variable biological half life it has been developed to a sustained gastroretentive system with a natural and synthetic polymer and to study how far the natural mucilage improves the sustained activity. Floating tablets were prepared by direct compression method using in combination of natural mucilage and synthetic polymer. Prior to the preparation of tablets the physical mixtures were subjected to FT IR studies and pre compression parameters. After preparation of tablets they were subjected to various tests like swollen index, drug content, In vitro dissolution and release kinetics with pcp disso software etc. The tablets prepared by direct compression shown good in thickness, hardness and uniformity in drug content, the prepared tablets floated more than 12h except FS1 and FS2 shows 9 and 11h. Swollen index studies shows with increase in concentration of polymer the swelling increases the diffusion path length by which the drug molecule may have to travel and cause lag time. In vitro results shows that on increasing the amount of hibiscus polymer the sustain activity is increased because of its integrity and forms a thick swollen mass and reduces the erosion property of the HypromelloseK100M, kinetic studies shows that FS 1, FS2, FS3 followed the Korsmeyer peppas model and the rest FS 4, FS 5, FS6 follows the zero order respectively. Based on n value indicating that the drug release followed super case II transport mechanism due to the erosion of the polymer.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

scholarly journals Interface Behavior of Brazing between Zr-Cu Filler Metal and SiC Ceramic

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 727
Author(s):  
Bofang Zhou ◽  
Taohua Li ◽  
Hongxia Zhang ◽  
Junliang Hou
Keyword(s):  
Interfacial Reaction ◽  
Reaction Layer ◽  
Chemical Potential ◽  
Filler Metal ◽  
Diffusion Constant ◽  
Interface Reaction ◽  
Diffusion Path ◽  
Interface Behavior ◽  
Interfacial Reaction Layer ◽  
Sic Ceramic

The interface behavior of brazing between Zr-Cu filler metal and SiC ceramic was investigated. Based on the brazing experiment, the formation of brazing interface products was analyzed using OM, SEM, XRD and other methods. The stable chemical potential phase diagram was established to analyze the possible diffusion path of interface elements, and then the growth behavior of the interface reaction layer was studied by establishing relevant models. The results show that the interface reaction between the active element Zr and SiC ceramic is the main reason in the brazing process the interface products are mainly ZrC and Zr2Si and the possible diffusion path of elements in the product formation process is explained. The kinetic equation of interfacial reaction layer growth is established, and the diffusion constant (2.1479 μm·s1/2) and activation energy (42.65 kJ·mol−1) are obtained. The growth kinetics equation of interfacial reaction layer thickness with holding time at different brazing temperatures is obtained.

Dependence of Diffusion Paths on Thermodynamic Factors in Ternary Systems

2008 ◽  
Vol 277 ◽  
pp. 119-124 ◽  
Author(s):  
Ü. Ugaste ◽  
J. Priimets ◽  
Tony Laas
Keyword(s):  
Approximate Equation ◽  
Ternary Systems ◽  
Diffusion Path ◽  
Tracer Diffusion ◽  
Diffusion Paths ◽  
Slope Function ◽  
Experimental Values ◽  
The Impact ◽  
Tracer Diffusion Coefficients ◽  
Thermodynamic Factors

The impact of thermodynamic factors on deviation from linearity of diffusion path in the ternary system Cu-Fe-Ni is analyzed. For that the slope function of the diffusion path for the diffusion couples 65Ni30Cu5Fe –29.5Ni16.5Cu54Fe, 49.5Ni50.5Fe – 51Ni49Cu and 84Cu16Ni – 50Ni50Fe, annealed at 1000°C for 196h, were calculated by an approximate equation using only thermodynamic data. Results of the calculation were compared with the values of the slope function obtained directly from experimental data. It is shown that despite of the fact that the tracer diffusion coefficients of the components in the system Cu-Fe-Ni are not equal the coincidence between the calculated and experimental values of the slope function is remarkable. This allows us to conclude that at least in this case the deviation of the diffusion path from linearity depends mainly on the thermodynamic properties of the system.

Magnetotransport behavior of polycrystallineYBa2Cu3O7: A possible role for surface barriers

1995 ◽  
Vol 52 (2) ◽  
pp. R739-R742 ◽  
Author(s):  
Shi Li ◽  
M. Fistul ◽  
J. Deak ◽  
P. Metcalf ◽  
G. F. Giuliani ◽  
...  
Keyword(s):  
Surface Barriers

scholarly journals Extremal surface barriers

2014 ◽  
Vol 2014 (3) ◽  
Author(s):  
Netta Engelhardt ◽  
Aron C. Wall
Keyword(s):  
Extremal Surface ◽  
Surface Barriers

Joining of Ti3SiC2 with Ti–6Al–4V Alloy

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto
Keyword(s):  
Solid State ◽  
Rate Constant ◽  
Liquid State ◽  
Parabolic Rate Constant ◽  
Diffusion Path ◽  
Solid State Diffusion ◽  
Diffusion Controlled ◽  
State Diffusion ◽  
Rate Controlled ◽  
Higher Temperature

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

Diffusion of Zinc in Two-Phase Mg-Al Alloy

2007 ◽  
Vol 263 ◽  
pp. 189-194
Author(s):  
Ivo Stloukal ◽  
Jiří Čermák
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Effective Diffusion ◽  
Residual Activity ◽  
Diffusion Path ◽  
Al Alloy ◽  
Serial Sectioning ◽  
Two Phase ◽  
Interphase Boundaries ◽  
The Mean

Coefficient of 65Zn heterodiffusion in Mg17Al12 intermetallic and in eutectic alloy Mg - 33.4 wt. % Al was measured in the temperature region 598 – 698 K using serial sectioning and residual activity methods. Diffusion coefficient of 65Zn in the intermetallic can be written as DI = 1.7 × 10-2 m2 s-1 exp (-155.0 kJ mol-1 / RT). At temperatures T ≥ 648 K, where the mean diffusion path was greater than the mean interlamellar distance in the eutectic, the effective diffusion coefficient Def = 2.7 × 10-2 m2 s-1 exp (-155.1 kJ mol-1 / RT) was evaluated. At two lower temperatures, the diffusion coefficients 65Zn in interphase boundaries were estimated: Db (623 K) = 1.6 × 10-12 m2 s-1 and Db (598 K) = 4.4 × 10-13 m2 s-1.

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