Hexagonal Boron Nitride Synthesized at Atmospheric Pressure Using Metal Alloy Solvents: Evaluation as a Substrate for 2D Materials

Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 735-740 ◽  
Author(s):  
Momoko Onodera ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Miyako Isayama ◽  
Satoru Masubuchi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atmospheric Pressure ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Metal Alloy

scholarly journals Chemisorption of Hydroxide on 2D Materials from DFT Calculations: Graphene versus Hexagonal Boron Nitride

2016 ◽  
Vol 7 (22) ◽  
pp. 4695-4700 ◽  
Author(s):  
Benoit Grosjean ◽  
Clarisse Pean ◽  
Alessandro Siria ◽  
Lydéric Bocquet ◽  
Rodolphe Vuilleumier ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Dft Calculations ◽  
Hexagonal Boron Nitride ◽  
2D Materials

scholarly journals Catalytic Effect of Ti or Pt in a Hexagonal Boron Nitride Surface for Capturing CO2

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 662
Author(s):  
J. M. Ramirez-de-Arellano ◽  
A. Fransuani Jiménez G. ◽  
L. F. Magaña
Keyword(s):  
Molecular Dynamics ◽  
Boron Nitride ◽  
Molecular Dynamics Simulations ◽  
First Principles ◽  
Atmospheric Pressure ◽  
Catalytic Effect ◽  
Hexagonal Boron Nitride ◽  
The Other ◽  
Adsorption Of Co2 ◽  
Dynamics Simulations

We investigated the effect of doping a hexagonal boron nitride surface (hBN) with Ti or Pt on the adsorption of CO2. We performed first-principles molecular dynamics simulations (FPMD) at atmospheric pressure, and 300 K. Pristine hBN shows no interaction with the CO2 molecule. We allowed the Ti and Pt atoms to interact separately, with either a B-vacancy or an N-vacancy. Both Ti and Pt ended chemisorbed on the surface. The system hBN + Ti always chemisorbed the CO2 molecule. This chemisorption happens in two possible ways. One is without dissociation, and in the other, the molecule breaks in CO and O. However, in the case of the Pt atom as dopant, the resulting system repels the CO2 molecule.

Carbon annealed HPHT-hexagonal boron nitride: Exploring defect levels using 2D materials combined through van der Waals interface

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 785-791
Author(s):  
Momoko Onodera ◽  
Miyako Isayama ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Van Der Waals ◽  
Defect Levels

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

Science ◽  
2007 ◽  
Vol 317 (5840) ◽  
pp. 932-934 ◽  
Author(s):  
Y. Kubota ◽  
K. Watanabe ◽  
O. Tsuda ◽  
T. Taniguchi
Keyword(s):  
Boron Nitride ◽  
Ultraviolet Light ◽  
Atmospheric Pressure ◽  
Hexagonal Boron Nitride ◽  
Light Emitting ◽  
Deep Ultraviolet

Hexagonal Boron Nitride Single Crystal Growth at Atmospheric Pressure Using Ni−Cr Solvent

2008 ◽  
Vol 20 (5) ◽  
pp. 1661-1663 ◽  
Author(s):  
Yoichi Kubota ◽  
Kenji Watanabe ◽  
Osamu Tsuda ◽  
Takashi Taniguchi
Keyword(s):  
Crystal Growth ◽  
Boron Nitride ◽  
Single Crystal ◽  
Atmospheric Pressure ◽  
Hexagonal Boron Nitride ◽  
Single Crystal Growth

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15205-15212 ◽  
Author(s):  
Hamin Park ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung-Yool Choi
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Etching Rate ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Device Integration

We propose the atomic-scale etching of h-BN achieving an etching rate less than 1 nm min−1 for device integration based on 2D materials.

Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux

2017 ◽  
Vol 17 (9) ◽  
pp. 4932-4935 ◽  
Author(s):  
Song Liu ◽  
Rui He ◽  
Zhipeng Ye ◽  
Xiaozhang Du ◽  
Jingyu Lin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atmospheric Pressure ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
Scale Growth ◽  
High Quality
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