Stacking of 2D materials containing a thin layer of hexagonal boron nitride using polycaprolactone

Author(s):  
Min Jae Shin ◽  
Young Jae Shin
2016 ◽  
Vol 7 (22) ◽  
pp. 4695-4700 ◽  
Author(s):  
Benoit Grosjean ◽  
Clarisse Pean ◽  
Alessandro Siria ◽  
Lydéric Bocquet ◽  
Rodolphe Vuilleumier ◽  
...  

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 785-791
Author(s):  
Momoko Onodera ◽  
Miyako Isayama ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15205-15212 ◽  
Author(s):  
Hamin Park ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung-Yool Choi

We propose the atomic-scale etching of h-BN achieving an etching rate less than 1 nm min−1 for device integration based on 2D materials.


Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 735-740 ◽  
Author(s):  
Momoko Onodera ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Miyako Isayama ◽  
Satoru Masubuchi ◽  
...  

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Kenji Watanabe ◽  
Takashi Taniguchi

Abstract Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic-layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-ultraviolet photoluminescence microscope was developed. This microscope makes it possible to visualize the impure-growth region with ease in a no-contact and non-destructive manner.


2020 ◽  
Vol 6 (10) ◽  
pp. eaay4958 ◽  
Author(s):  
Hyo Ju Park ◽  
Janghwan Cha ◽  
Min Choi ◽  
Jung Hwa Kim ◽  
Roland Yingjie Tay ◽  
...  

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.


Nanophotonics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 3909-3920
Author(s):  
Hodjat Hajian ◽  
Ivan D. Rukhlenko ◽  
George W. Hanson ◽  
Tony Low ◽  
Bayram Butun ◽  
...  

AbstractMid-infrared (MIR) plasmon-phonon features of heterostructures composing of a plasmonic anisotropic two-dimensional material (A2DM) on a hexagonal boron nitride (hBN) film are analyzed. We derive the exact dispersion relations of plasmon-phonons supported by the heterostructures and demonstrate the possibility of topological transitions of these modes within the second Reststrahlen band of hBN. The topological transitions lead to enhanced local density of plasmon-phonon states, which intensifies the spontaneous emission rate, if the thickness of the hBN layer is appropriately chosen. We also investigate a lateral junction formed by A2DM/hBN and A2DM, demonstrating that one can realize asymmetric guiding, beaming, and unidirectionality of the hybrid guided modes. Our findings demonstrate potential capabilities of the A2DM/hBN heterostructures for active tunable light–matter interactions and asymmetric in-plane polariton nanophotonics in the MIR range.


2022 ◽  
Author(s):  
Xuewen Zheng ◽  
Haifeng Cong ◽  
Ting Yang ◽  
Kemeng Ji ◽  
Chengyang Wang ◽  
...  

Abstract Two-dimensional (2D) materials with mono or few layers have wide application prospects, including electronic, optoelectronic, and interface functional coatings in addition to energy conversion and storage applications. However, the exfoliation of such materials is still challenging due to their low yield, high cost, and poor ecological safety in preparation. Herein, a safe and efficient solid suspension-improving method was proposed to exfoliate hexagonal boron nitride nanosheets (hBNNSs) in a large yield. The method entails adding a permeation barrier layer in the solvothermal kettle, thus prolonging the contact time between the solvent and hexagonal boron nitride (hBN) nanosheetand improving the stripping efficiency without the need for mechanical agitation. In addition, the proposed method selectively utilizes a matching solvent that can reduce the stripping energy of the material and employs a high-temperature steam shearing process. Compared with other methods, the exfoliating yield of hBNNSs is up to 42.3% at 150°C for 12 h, and the strategy is applicable to other 2D materials. In application, the ionic conductivity of a PEO/hBNNSs composite electrolytes reached 2.18×10−4 S cm−1 at 60°C. Overall, a versatile and effective method for stripping 2D materials in addition to a new safe energy management strategy were provided.


2017 ◽  
Vol 19 (9) ◽  
pp. 6554-6562 ◽  
Author(s):  
Yang Hong ◽  
Chongqin Zhu ◽  
Minggang Ju ◽  
Jingchao Zhang ◽  
Xiao Cheng Zeng

The predicted in-plane thermal conductivity of the graphene/stanene hetero-bilayer is 311.1 W m−1 K−1, higher than most 2D materials such as phosphorene, hexagonal boron nitride, MoS2 and MoSe2.


2020 ◽  
Vol 6 (49) ◽  
pp. eabd3655
Author(s):  
Yaping Yang ◽  
Jidong Li ◽  
Jun Yin ◽  
Shuigang Xu ◽  
Ciaran Mullan ◽  
...  

In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be markedly changed by a moiré pattern induced by twist angles between different layers. This process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here, we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique, we fabricated heterostructures where graphene is perfectly aligned with both top and bottom encapsulating layers of hexagonal boron nitride. Our technique enables twisted 2D material systems in one single stack with dynamically tunable optical, mechanical, and electronic properties.


Sign in / Sign up

Export Citation Format

Share Document