scholarly journals Chemisorption of Hydroxide on 2D Materials from DFT Calculations: Graphene versus Hexagonal Boron Nitride

2016 ◽  
Vol 7 (22) ◽  
pp. 4695-4700 ◽  
Author(s):  
Benoit Grosjean ◽  
Clarisse Pean ◽  
Alessandro Siria ◽  
Lydéric Bocquet ◽  
Rodolphe Vuilleumier ◽  
...  
RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 107114-107126 ◽  
Author(s):  
M. Kamaraj ◽  
J. Vijaya Sundar ◽  
V. Subramanian

The changes in the electronic properties of single and bilayers of graphene and hexagonal boron nitride two dimensional sheets have been investigated upon interaction with 2,3,7,8-tetrachlorodibenzo-p-dioxin by employing the DFT calculations.


2019 ◽  
Author(s):  
Rick W. Dorn ◽  
Matthew J. Ryan ◽  
Tae-Hoon Kim ◽  
Tian Wei Goh ◽  
Patrick M. Heintz ◽  
...  

Hexagonal boron nitride nanosheets (h-BNNS), the isoelectric analog to graphene, have received much attention over the past decade due to their high thermal oxidative resistance, high bandgap, catalytic activity and low cost. The molecular functional groups that terminate boron and nitrogen zigzag and/or armchair edges directly affect their chemical, physical and electronic properties. However, an understanding of the exact molecular edge termination present in h-BNNS is lacking. Here, high-resolution magic-angle spinning (MAS) solid-state NMR (SSNMR) spectroscopy and plane-wave density-functional theory (DFT) calculations are used to determine the exact molecular edge termination in exfoliated h-BNNS. 1H→11B cross-polarization MAS (CPMAS) SSNMR spectra of h-BNNS revealed multiple hydroxyl/oxygen coordinate boron edge sites that were not detectable in direct excitation experiments. A dynamic nuclear polarization (DNP)-enhanced 1H→15N CPMAS spectrum of h-BNNS displayed four distinct 15N resonances while a 2D 1H{14N} dipolar-HMQC spectrum revealed three distinct 14N environments. Plane-wave DFT calculations were used to construct model edge structures and predict the corresponding 11B, 14N and 15N SSNMR spectra. Comparison of the experimental and predicted SSNMR spectra confirms that zigzag and armchair edges with both amine and boron hydroxide/oxide termination are present. The detailed characterization of h-BNNS molecular edge termination will provide usefulness for many material science applications and the techniques outlined here should be applicable to comprehensively understand the molecular edge terminations in other 2D materials.


Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 785-791
Author(s):  
Momoko Onodera ◽  
Miyako Isayama ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
...  

2017 ◽  
Vol 19 (19) ◽  
pp. 12032-12044 ◽  
Author(s):  
Masoud Darvish Ganji ◽  
Razieh Dodangeh

Double-layer models of porous h-BN monolayers, with pores differing in size and chemistry, were employed for efficient gas separation and purification. Performance was evaluated by DFT calculations and MD simulations.


Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15205-15212 ◽  
Author(s):  
Hamin Park ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung-Yool Choi

We propose the atomic-scale etching of h-BN achieving an etching rate less than 1 nm min−1 for device integration based on 2D materials.


Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 735-740 ◽  
Author(s):  
Momoko Onodera ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Miyako Isayama ◽  
Satoru Masubuchi ◽  
...  

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Kenji Watanabe ◽  
Takashi Taniguchi

Abstract Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic-layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-ultraviolet photoluminescence microscope was developed. This microscope makes it possible to visualize the impure-growth region with ease in a no-contact and non-destructive manner.


2020 ◽  
Vol 6 (10) ◽  
pp. eaay4958 ◽  
Author(s):  
Hyo Ju Park ◽  
Janghwan Cha ◽  
Min Choi ◽  
Jung Hwa Kim ◽  
Roland Yingjie Tay ◽  
...  

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.


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