Direct Growth of Graphene Nanowalls on Silicon Using Plasma-Enhanced Atomic Layer Deposition for High-Performance Si-Based Infrared Photodetectors

Author(s):  
Jingkun Cong ◽  
Afzal Khan ◽  
Jiajun Li ◽  
Ying Wang ◽  
Mingsheng Xu ◽  
...  
2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
B. B. Wu ◽  
H. M. Zheng ◽  
Y. Q. Ding ◽  
W. J. Liu ◽  
H. L. Lu ◽  
...  

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