scholarly journals Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

2019 ◽  
Vol 1 (9) ◽  
pp. 1937-1944 ◽  
Author(s):  
Sergio González-Casal ◽  
Ignasi Fina ◽  
Florencio Sánchez ◽  
Josep Fontcuberta
Keyword(s):  
Series Resistance ◽  
Magnetoelectric Coupling ◽  
Ferromagnetic Structure

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

The Determination of the Magnetoelectric Coupling Coefficient in Ferroelectric–Ferromagnetic Composite Based on PZT–Ferrite

2013 ◽  
Vol 58 (4) ◽  
pp. 1401-1403 ◽  
Author(s):  
J.A. Bartkowska ◽  
R. Zachariasz ◽  
D. Bochenek ◽  
J. Ilczuk
Keyword(s):  
Dielectric Permittivity ◽  
Coupling Coefficient ◽  
Mean Field ◽  
Field Approximation ◽  
Theoretical Description ◽  
Magnetoelectric Coupling ◽  
Mean Field Approximation ◽  
Dielectric Measurements ◽  
Temperature Dependences ◽  
Multiferroic Composite

Abstract In the present work, the magnetoelectric coupling coefficient, from the temperature dependences of the dielectric permittivity for the multiferroic composite was determined. The research material was ferroelectric-ferromagnetic composite on the based PZT and ferrite. We investigated the temperature dependences of the dielectric permittivity (") for the different frequency of measurement’s field. From the dielectric measurements we determined the temperature of phase transition from ferroelectric to paraelectric phase. For the theoretical description of the temperature dependence of the dielectric constant, the Hamiltonian of Alcantara, Gehring and Janssen was used. To investigate the dielectric properties of the multiferroic composite this Hamiltonian was expressed under the mean-field approximation. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.

All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

2011 ◽  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Flow ◽  
Series Resistance ◽  
Electrical Contacts ◽  
New Method ◽  
Contactless Measurement ◽  
Sample Handling ◽  
Imaging Methods ◽  
Lateral Current

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.

Dynamic behavior of magnetoelectric coupling of CuFeO2 induced by a high magnetic field

2014 ◽  
Vol 115 (11) ◽  
pp. 114107 ◽  
Author(s):  
Nianming Xia ◽  
Liran Shi ◽  
Zhengcai Xia ◽  
Borong Chen ◽  
Zhao Jin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Dynamic Behavior ◽  
High Magnetic Field ◽  
Magnetoelectric Coupling

scholarly journals All organic multiferroic magnetoelectric complexes with strong interfacial spin-dipole interaction

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuying Yang ◽  
Zhiyan Chen ◽  
Xiangqian Lu ◽  
Xiaotao Hao ◽  
Wei Qin
Keyword(s):  
Magnetic Field ◽  
Light Intensity ◽  
Room Temperature ◽  
Incident Light ◽  
Dipole Interaction ◽  
Interfacial Interaction ◽  
Magnetoelectric Coupling ◽  
Incident Light Intensity ◽  
Organic Ferromagnets ◽  
Magnetoelectric Coefficient

AbstractThe organic magnetoelectric complexes are beneficial for the development on flexible magnetoelectric devices in the future. In this work, we fabricated all organic multiferroic ferromagnetic/ferroelectric complexes to study magnetoelectric coupling at room temperature. Under the stimulus of external magnetic field, the localization of charge inside organic ferromagnets will be enhanced to affect spin–dipole interaction at organic multiferroic interfaces, where overall ferroelectric polarization is tuned to present an organic magnetoelectric coupling. Moreover, the magnetoelectric coupling of the organic ferromagnetic/ferroelectric complex is tightly dependent on incident light intensity. Decreasing light intensity, the dominated interfacial interaction will switch from spin–dipole to dipole–dipole interaction, which leads to the magnetoelectric coefficient changing from positive to negative in organic multiferroic magnetoelectric complexes.

Sign in / Sign up

Export Citation Format

Share Document