Controlling the Morphology and Interface of the Perovskite Layer for Scalable High-Efficiency Solar Cells Fabricated Using Green Solvents and Blade Coating in an Ambient Environment

2020 ◽  
Vol 12 (23) ◽  
pp. 26041-26049 ◽  
Author(s):  
Shih-Han Huang ◽  
Kuo-Yu Tian ◽  
Hung-Che Huang ◽  
Chia-Feng Li ◽  
Wei-Cheng Chu ◽  
...  
2016 ◽  
Vol 4 (31) ◽  
pp. 7415-7419 ◽  
Author(s):  
Yukun Wang ◽  
Dezhi Yang ◽  
Xiaokang Zhou ◽  
Saad M. Alshehri ◽  
Tansir Ahamad ◽  
...  

High quality perovskite thin films were manufactured via a vapour-assisted process. High efficiency solar cells (PCE up to 12.2%) and high detectivity photodetectors (photodetectivity up to 3 × 1012 Jones) can be fabricated by using the perovskite layer and C60.


2019 ◽  
Vol 29 (15) ◽  
pp. 1807420 ◽  
Author(s):  
Sawanta S. Mali ◽  
Jyoti V. Patil ◽  
Hyungjin Kim ◽  
HyunHoon Kim ◽  
Chang Kook Hong

2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Alexander D. Taylor ◽  
Qing Sun ◽  
Katelyn P. Goetz ◽  
Qingzhi An ◽  
Tim Schramm ◽  
...  

AbstractDeposition of perovskite films by antisolvent engineering is a highly common method employed in perovskite photovoltaics research. Herein, we report on a general method that allows for the fabrication of highly efficient perovskite solar cells by any antisolvent via manipulation of the antisolvent application rate. Through detailed structural, compositional, and microstructural characterization of perovskite layers fabricated by 14 different antisolvents, we identify two key factors that influence the quality of the perovskite layer: the solubility of the organic precursors in the antisolvent and its miscibility with the host solvent(s) of the perovskite precursor solution, which combine to produce rate-dependent behavior during the antisolvent application step. Leveraging this, we produce devices with power conversion efficiencies (PCEs) that exceed 21% using a wide range of antisolvents. Moreover, we demonstrate that employing the optimal antisolvent application procedure allows for highly efficient solar cells to be fabricated from a broad range of precursor stoichiometries.


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 591
Author(s):  
Keke Song ◽  
Xiaoping Zou ◽  
Huiyin Zhang ◽  
Chunqian Zhang ◽  
Jin Cheng ◽  
...  

The electron transport layer (ETL) is critical to carrier extraction for perovskite solar cells (PSCs). Moreover, the morphology and surface condition of the ETL could influence the topography of the perovskite layer. ZnO, TiO2, and SnO2 were widely investigated as ETL materials. However, TiO2 requires a sintering process under high temperature and ZnO has the trouble of chemical instability. SnO2 possesses the advantages of low-temperature fabrication and high conductivity, which is critical to the performance of PSCs prepared under low temperature. Here, we optimized the morphology and property of SnO2 by modulating the concentration of a SnO2 colloidal dispersion solution. When adjusting the concentration of SnO2 colloidal dispersion solution to 5 wt.% (in water), SnO2 film indicated better performance and the perovskite film has a large grain size and smooth surface. Based on high efficiency (16.82%), the device keeps a low hysteresis index (0.23).


1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.


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