scholarly journals Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating

ACS Nano ◽  
2018 ◽  
Vol 12 (12) ◽  
pp. 12805-12813 ◽  
Author(s):  
Artem G. Shulga ◽  
Simon Kahmann ◽  
Dmitry N. Dirin ◽  
Arko Graf ◽  
Jana Zaumseil ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Pbs Quantum Dot

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4624-4629 ◽  
Author(s):  
Penghui He ◽  
Congbiao Jiang ◽  
Linfeng Lan ◽  
Sheng Sun ◽  
Yizhi Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Light Emitting

Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

2020 ◽  
Vol 12 (19) ◽  
pp. 21944-21951
Author(s):  
Dae-Kyu Kim ◽  
Dongsun Choi ◽  
Mihyeon Park ◽  
Kwang Seob Jeong ◽  
Jong-Ho Choi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Lead Bromide

Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

2015 ◽  
Vol 106 (9) ◽  
pp. 093507 ◽  
Author(s):  
Hye-Mi So ◽  
Hyekyoung Choi ◽  
Hyung Cheoul Shim ◽  
Seung-Mo Lee ◽  
Sohee Jeong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Deposition Effect ◽  
Pbs Quantum Dot

Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

2016 ◽  
Vol 2 (4) ◽  
pp. 1500467 ◽  
Author(s):  
Artem G. Shulga ◽  
Laura Piveteau ◽  
Satria Z. Bisri ◽  
Maksym V. Kovalenko ◽  
Maria A. Loi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Pbs Quantum Dot

Bias-Stress Effect in 1,2-Ethanedithiol-Treated PbS Quantum Dot Field-Effect Transistors

ACS Nano ◽  
2012 ◽  
Vol 6 (4) ◽  
pp. 3121-3127 ◽  
Author(s):  
Timothy P. Osedach ◽  
Ni Zhao ◽  
Trisha L. Andrew ◽  
Patrick R. Brown ◽  
Darcy D. Wanger ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effect ◽  
Bias Stress ◽  
Pbs Quantum Dot

Highly efficient and stable hybrid quantum-dot light-emitting field-effect transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 2439-2449
Author(s):  
Penghui He ◽  
Linfeng Lan ◽  
Caihao Deng ◽  
Jian Wang ◽  
Junbiao Peng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Light Emitting ◽  
Highly Efficient ◽  
Stable Hybrid

A red quantum-dot light-emitting transistor with an EQE of 22.8% and a field-effect mobility of 3.1 cm2 V−1 s−1 is demonstrated.

scholarly journals Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

2017 ◽  
Vol 9 (5) ◽  
pp. 4719-4724 ◽  
Author(s):  
Mohamad I. Nugraha ◽  
Roger Häusermann ◽  
Shun Watanabe ◽  
Hiroyuki Matsui ◽  
Mykhailo Sytnyk ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Trap States ◽  
High K ◽  
Pbs Quantum Dot

scholarly journals Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

2016 ◽  
Vol 2 (4) ◽  
Author(s):  
Artem G. Shulga ◽  
Laura Piveteau ◽  
Satria Z. Bisri ◽  
Maksym V. Kovalenko ◽  
Maria A. Loi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Pbs Quantum Dot

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

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