Effect of Covalent Surface Functionalization of Si on the Activity of Trifluoromethanesulfonic Anhydride for Suppressing Surface Recombination

2020 ◽  
Vol 12 (51) ◽  
pp. 57560-57568
Author(s):  
Robert M. Vasquez ◽  
Sofiya Hlynchuk ◽  
Stephen Maldonado
Keyword(s):  
Surface Functionalization ◽  
Surface Recombination ◽  
Trifluoromethanesulfonic Anhydride

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Effects of Wet Chemical Oxidation on Surface Functionalization and Morphology of Highly Oriented Pyrolytic Graphite

2020 ◽  
Author(s):  
Mikhail Trought ◽  
Isobel Wentworth ◽  
Timothy Leftwich ◽  
Kathryn Perrine
Keyword(s):  
Surface Functionalization ◽  
Functional Group ◽  
Pyrolytic Graphite ◽  
Surface Oxidation ◽  
Chemical Oxidation ◽  
Synthesis Methods ◽  
Acid Solutions ◽  
Highly Oriented Pyrolytic Graphite ◽  
Wet Chemical ◽  
Surface Morphologies

The knowledge of chemical functionalization for area selective deposition (ASD) is crucial for designing the next generation heterogeneous catalysis. Surface functionalization by oxidation was studied on the surface of highly oriented pyrolytic graphite (HOPG). The HOPG surface was exposed to with various concentrations of two different acids (HCl and HNO3). We show that exposure of the HOPG surface to the acid solutions produce primarily the same -OH functional group and also significant differences the surface topography. Mechanisms are suggested to explain these strikingly different surface morphologies after surface oxidation. This knowledge can be used to for ASD synthesis methods for future graphene-based technologies.

AGENCY OF SURFACE RECOMBINATION ON VOLT-AMPERE CHARACTERISTIC OF THE DIODE WITH DOUBLE INJECTION

2020 ◽  
pp. 70-73
Author(s):  
R. Y. Rasulov ◽  
A. Madgaziev ◽  
U. Rayimjonova ◽  
M. Mamatova
Keyword(s):  
Surface Recombination ◽  
Double Injection

Synthesis and Surface Functionalization of Water-soluble Quantum Dots

2012 ◽  
Vol 8 (2) ◽  
pp. 202-207 ◽  
Author(s):  
Sonia Bailon-Ruiz ◽  
Luis Alamo-Nole ◽  
Oscar Perales-Perez
Keyword(s):  
Quantum Dots ◽  
Surface Functionalization ◽  
Water Soluble

Surface functionalization – a new functional dimension added to 3D printing

2020 ◽  
Vol 8 (36) ◽  
pp. 12380-12411
Author(s):  
Pan Jiang ◽  
Zhongying Ji ◽  
Xiaolong Wang ◽  
Feng Zhou
Keyword(s):  
3D Printing ◽  
Surface Functionalization ◽  
Rapid Development ◽  
Functional Dimension

Various requirements for 3D printing raised by actual applications in different fields have provoked the rapid development of technologies together with various specific materials.

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