scholarly journals Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 8349-8354 ◽  
Author(s):  
Weihao Wang ◽  
Xinhua Pan ◽  
Xiaoli Peng ◽  
Qiaoqi Lu ◽  
Fengzhi Wang ◽  
...  

High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices.

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  

2013 ◽  
Vol 6 (8) ◽  
pp. 085101 ◽  
Author(s):  
Kentaro Higuchi ◽  
Shigeru Kishimoto ◽  
Yuta Nakajima ◽  
Takuya Tomura ◽  
Masafumi Takesue ◽  
...  

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 14790-14797
Author(s):  
Santanu Jana ◽  
Emanuel Carlos ◽  
Shrabani Panigrahi ◽  
Rodrigo Martins ◽  
Elvira Fortunato

2010 ◽  
Vol 22 (43) ◽  
pp. 4862-4866 ◽  
Author(s):  
Yuning Li ◽  
Samarendra P. Singh ◽  
Prashant Sonar

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.


2000 ◽  
Vol 621 ◽  
Author(s):  
Ralf Dassow ◽  
Jürgen R. Köhler ◽  
Melanie Nerding ◽  
Horst P. Strunk ◽  
Youri Helen ◽  
...  

ABSTRACTWe crystallize amorphous silicon films with a frequency doubled Nd:YVO4 laser operating at a repetition frequency of up to 50 kHz. A sequential lateral solidification process yields polycrystalline silicon with grains longer than 100 μm and a width between 0.27 and 1.7 μm depending on film thickness and laser repetition frequency. The average grain size is constant over the whole crystallized area of 25 cm2. Thin film transistors with n- type and p-type channels fabricated from the polycrystalline films have average field effect mobilities of μn = 467 cm2/Vs and μp = 217 cm2/Vs respectively. As a result of the homogeneous grain size distribution, the standard deviation of the mobility is only 5%.


2014 ◽  
Vol 15 (12) ◽  
pp. 3639-3647 ◽  
Author(s):  
Hongki Kang ◽  
Rungrot Kitsomboonloha ◽  
Kurt Ulmer ◽  
Lisa Stecker ◽  
Gerd Grau ◽  
...  

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