Metallized Skeleton of Polymer Foam Based on Metal–Organic Decomposition for High-Performance EMI Shielding

Author(s):  
Si-Yuan Liao ◽  
Gang Li ◽  
Xiao-Yun Wang ◽  
Yan-Jun Wan ◽  
Peng-Li Zhu ◽  
...  
2021 ◽  
Author(s):  
Jingyuan Zhang ◽  
Xiaodong Li ◽  
Mu Zhang ◽  
Qi Zhu ◽  
Xudong Sun

Herein, we presented a clean, green and economical method to prepare flexible and ultrathin silver films for electromagnetic interference (EMI) shielding by thermal decomposition of metal organic decomposition (MOD) ink....


2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Yingtao Xie ◽  
Dongping Wang ◽  
Hon Hang Fong

A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD) method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O2)3], zinc acetylacetonate hydrate [Zn(C5H7O2)2·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O2)3] dissolved in tetrahydrofuran (THF). The deposited films by spin-coating were annealed at moderate process temperature (≤500°C). The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities (μe) decreased and VTH shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH. As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.


1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


Author(s):  
Xiaofei Luo ◽  
Shuai Hu ◽  
Jingyou Yuan ◽  
Huan Yang ◽  
Shaoyun Shan ◽  
...  

The increasingly severe issues of antibiotic-induced pollution greatly stimulate the development of high-performance advanced adsorbents. In this contribution, a novel Fe-centered metal-organic aerogel (Fe-MOA) was synthesized through the use of...


2021 ◽  
Author(s):  
Ning Liu ◽  
Qiaoqiao Zhang ◽  
Jingqi Guan

Seeking for low-cost and high-performance electrocatalysts for oxygen evolution reaction (OER) has drawn enormous research interest in the last few years. Reported herein is the topotactic construction of a binuclear...


RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18476-18482
Author(s):  
Licui Wang ◽  
Zhaoxin Xie ◽  
Yanhu Zhan ◽  
Xuehui Hao ◽  
Yanyan Meng ◽  
...  

It is of great significance for electromagnetic interference (EMI) shielding materials to fulfill long-lasting service requirements.


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