Embedding CdS@Au into Ultrathin Ti3–xC2Ty to Build Dual Schottky Barriers for Photocatalytic H2 Production

Enterobacter aerogenes AY-2 mutant is known for hydrogen gas producer which ws obtained from the sludge of methane fermentation and the yield is 1.5 fold higher than wildtype. Hydrogen gas production can be gain via NADH oxidation in anaerobic metabolic pathway by blocking organic acid production. Metabolic pathway can be changed by mutagenesis. Enterobacter aerogenes AY-2 mutated with ethyl methane sulfonate in logarithmic phase with consentration 10, 11, 12, 13, 14 and 15 μl/ml cell suspention during 120 minute. Mutation that result lowest survival ratio (0,01%) was 14 μl EMS/ml cell suspention is repeated with variation incubation time, 30, 60, 90 and 120 minute. 166 double mutant colony has been collected and choosen randomly. The choosen 43 colony was fermented in glycerol complex medium for determining ten double mutant with the highest H2 production. Double mutant AD-H43 is a highest H2 producer that increase 20% H2 production from AY-2 and has a decrease lactid acid production, 31% less from AY-2. Increasing H2 production in double mutant AD-H43 is caused by lactate dehydrogenase deffi cient.Keywords: Enterobacter aerogenes AY-2, ethyl methane sulfonate (EMS), H2 and methane sludge

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Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0064 ◽

2005 ◽

Author(s):

U. Kerst ◽

P. Sadewater ◽

R. Schlangen ◽

C. Boit ◽

R. Leihkauf ◽

...

Keyword(s):

Numerical Simulation ◽

Electrical Properties ◽

Process Parameters ◽

Thermal Effects ◽

Silicon Surface ◽

Ohmic Contacts ◽

Ion Beam ◽

Schottky Barriers ◽

Material Analysis ◽

Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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