scholarly journals Great Enhancement Effect of 20–40 nm Ag NPs on Solar-Blind UV Response of the Mixed-Phase MgZnO Detector

ACS Omega ◽  
2021 ◽  
Author(s):  
Shun Han ◽  
Hao Xia ◽  
YouMing Lu ◽  
Sirong Hu ◽  
DaoHua Zhang ◽  
...  
2017 ◽  
Vol 5 (44) ◽  
pp. 11472-11480 ◽  
Author(s):  
S. Han ◽  
X. H. Ji ◽  
Q. L. An ◽  
Y. M. Lu ◽  
P. J. Cao ◽  
...  

UV detectors based on mixed-phase MgZnO thin films, synthesized at 24 J cm−2 and 26 J cm−2, could detect faint deep UV light under strong background noise.


2019 ◽  
Vol 15 (3) ◽  
pp. 303-313
Author(s):  
Sai Ma ◽  
Shuanglong Feng ◽  
Shuai Kang ◽  
Feng Wang ◽  
Xie Fu ◽  
...  

2018 ◽  
Vol 6 (16) ◽  
pp. 1800077 ◽  
Author(s):  
Mengjiao Zhang ◽  
Lingxue Wang ◽  
Linghai Meng ◽  
Xian-Gang Wu ◽  
Qinwen Tan ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Lamarre ◽  
A. Hairston ◽  
S. Tobin ◽  
K. K. Wong ◽  
M. F. Taylor ◽  
...  

ABSTRACTThis paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/μ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/μ=50% for forty 30×30 μm2 diodes at V=−40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 μm thick GaN absorber layer and imply a donor concentration of 3-4×1016 cm−3.


2019 ◽  
Vol >15 (5) ◽  
pp. 460-470
Author(s):  
Tauheed ul Haq ◽  
Sami Ullah ◽  
Rehman Ullah

The excessive use of nitrogen and phosphorous fertilizers led to environmental pollution and serious health issues. Nanotechnology may solve such a type of problems by providing nanomaterials of high performance. Here, we reviewed the beneficial effects of some different nanoparticles on the growth of different parts of different plants belonging to 14 different families. Nanoparticles such as CNT, Ag-NPs, TiO2-NPs, Au-NPs, S-NPs, Ag-NPs+ Magnetic field-NPs, ZnO-NPs, Fe-NPs, SiO2-NPs, RA-NPs, Zinc-NPs, Silica-NPs, Apatite-NPs, CeO2-NPs, Cu-NPs, CaCO3-NPs, Chitosan- NKP-NPs and Carbon nono-tube coated NKP+ Chitosan NPK-NPs show better growth enhancement effect on different parts of plants and crop production when used in proper concentration. We find that the most favorable effect of NPs was on, chlorophyll contents, root and shoot length followed by proteins contents and plant biomass.


2014 ◽  
Vol 105 (1) ◽  
pp. 011117 ◽  
Author(s):  
M. M. Fan ◽  
K. W. Liu ◽  
Z. Z. Zhang ◽  
B. H. Li ◽  
X. Chen ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1111
Author(s):  
Haowen Liu ◽  
Honglin Li ◽  
Shuren Zhou ◽  
Hong Zhang ◽  
Shiqiang Fan ◽  
...  

Recently, as an emerging material, ultrawide bandgap Ga2O3 has been investigated extensively in solar-blind deep-ultraviolet (DUV) photodetectors (PDs). High sensitivity and signal-to-noise ratio of PDs are essential for the detection of solar-blind DUV signals; however, such factors are often not mutually compatible. In the present study, an amorphous/monoclinic homogeneous mixed-phase structure was demonstrated to be significantly beneficial in enhancing the comprehensive performance of Ga2O3 solar-blind DUV PDs, especially with respect to sensitivity and the signal-to-noise ratio. Further experimental and theoretical findings provide insights on the transport mechanism of enhanced performance in the mixed-phase Ga2O3 solar-blind DUV PD. For effectively separating the photogenerated carriers, a type-II band alignment between amorphous and crystalline Ga2O3 can be exploited. Furthermore, the change of the barrier height of the mixed-phase interface also has a significant impact on the transport properties of the mixed-phase Ga2O3 PD. Additionally, the potential applications of mixed-phase Ga2O3 PD in high-voltage corona discharge were explored, and clear and stable corona discharge signals were obtained. The results of the present study may promote understanding of DUV photoelectronic devices with various mixed-phase Ga2O3 materials and provide an efficient approach for promoting comprehensive performance in future solar-blind detection applications.


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