scholarly journals Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

ACS Omega ◽  
2021 ◽  
Author(s):  
Lei Zhang ◽  
Yuantong Gu ◽  
Aijun Du
Keyword(s):  
Electron Mobility ◽  
Spin Splitting ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Rashba Spin ◽  
Rashba Spin Splitting

scholarly journals Predicted septuple-atomic-layer Janus MSiGeN4 (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

2021 ◽  
Author(s):  
San-Dong Guo ◽  
Wen-Qi Mu ◽  
Yu-Tong Zhu ◽  
Ru-Yue Han ◽  
Wencai Ren
Keyword(s):  
2D Materials ◽  
Atomic Layer ◽  
Spin Splitting ◽  
High Electron ◽  
Two Dimensional ◽  
Electron Carrier ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Out Of Plane

Janus two-dimensional (2D) materials have attracted much attention due to possessing unique properties caused by their out-of-plane asymmetry, which have been achieved in many 2D families. In this work, the...

Partially planar BP3with high electron mobility as a phosphorene analog

2017 ◽  
Vol 5 (43) ◽  
pp. 11267-11274 ◽  
Author(s):  
Fazel Shojaei ◽  
Hong Seok Kang
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Stacking Pattern ◽  
Very High ◽  
Bilayer Formation

We propose a two-dimensional BP3crystal with a very high electron mobility of 4.6 × 104cm2V−1s−1. Bilayer formation, specifically stacking pattern AA, results in an even higher electron mobility of ∼3.7 × 105cm2V−1s−1, which is ∼2500 times larger than that of an α phosphorene bilayer.

scholarly journals Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

2013 ◽  
Vol 114 (3) ◽  
pp. 033105 ◽  
Author(s):  
N. Nader Esfahani ◽  
R. E. Peale ◽  
W. R. Buchwald ◽  
C. J. Fredricksen ◽  
J. R. Hendrickson ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 885 ◽  
Author(s):  
Yan Gu ◽  
Dongmei Chang ◽  
Haiyan Sun ◽  
Jicong Zhao ◽  
Guofeng Yang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Theoretical Study ◽  
Lattice Relaxation ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Two Dimensional ◽  
Drift Diffusion ◽  
High Electron Mobility ◽  
Al Content ◽  
Dimensional Electron Gas

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

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