scholarly journals Study of the Stability of 1-Alkyl-3-methylimidazolium Hexafluoroantimonate(V) Based Ionic Liquids Using X-ray Photoelectron Spectroscopy

2016 ◽  
Vol 4 (11) ◽  
pp. 5953-5962 ◽  
Author(s):  
Luiz S. Longo ◽  
Emily F. Smith ◽  
Peter Licence
2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.


2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.


Proceedings ◽  
2019 ◽  
Vol 16 (1) ◽  
pp. 26
Author(s):  
Patrycja Wilczewska ◽  
Aleksandra Bielicka-Giełdoń ◽  
Agnieszka Fiszka Borzyszkowska ◽  
Aleksandra Pieczyńska ◽  
Ewa Maria Siedlecka

A series of Bi4O5Br2 photocatalysts were prepared via an innovation method of synthesis with ionic liquids (ILs). The crystal structures were investigated by X-ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FT-IR). The Field Emission Scanning Electron Microscope (FE-SEM) images illustrated the unique structure of prepared photocatalysts. The photocatalysts were also characterized by N2 adsorption-desorption analysis, X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectra (UV-vis/DRS) and photoluminescence spectra (PL). The role of ILs in synthesis of Bi4O5Br2 on morphology and photocatalytic properties were investigated. Rhodamine B, 5-fluorouracil and chromium (VI) were used as the model micropollutants to evaluated adsorption capacity, photooxidation and photoreduction ability of prepared Bi4O5Br2 under artificial solar light. This work provided a new thought for enhanced photocatalytic activity of bismuth oxybromide photocatalysts.


2008 ◽  
Vol 130 (3) ◽  
Author(s):  
Zonggang Mu ◽  
Xiaoxuan Wang ◽  
Shuxiang Zhang ◽  
Yongmin Liang ◽  
Meng Bao ◽  
...  

A series of room temperature ionic liquids bearing with phosphonyl groups on the imidazolium cations, namely, 1-(3′-O,O-diethylphosphonyl-n-propyl)-3-alkylimidazolium tetrafluoroborate, were prepared and their physical properties were determined. They were also evaluated as promising lubricants for the contacts of aluminum on steel by using a SRV test rig. The tribological test results show that the synthetic ionic liquids exhibit better friction-reducing and antiwear abilities than the unsubstituted ionic liquid of 1-ethyl-3-hexylimidazolium tetrafluoroborate (coded as L206) and phosphazene (X-1P). Both the anions and the side substitutes attached to the imidazolium cations affect the tribological performance of lubricants. The scanning electron microscopy, energy-dispersive x-ray analysis, and x-ray photoelectron spectroscopy analyses of the worn surfaces show that complicated tribochemical reactions are involved in the sliding process. The anion decomposition and chemical adsorption of cation took place on the worn surface of aluminum alloy during the sliding process. As a result of the generation of boundary lubrication films which are composed of metal fluorides, B2O3, BN, nitrogen oxide, and FePO4 help to effectively reduce the friction and wear of the contacts.


2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.


2005 ◽  
pp. 5633 ◽  
Author(s):  
Emily F. Smith ◽  
Ignacio J. Villar Garcia ◽  
David Briggs ◽  
Peter Licence

1995 ◽  
Vol 02 (03) ◽  
pp. 297-303 ◽  
Author(s):  
P.C. WONG ◽  
Y.S. LI ◽  
K.A.R. MITCHELL

X-ray photoelectron spectroscopy (XPS) has been used to study the interfacial chemistries of a 65-Å film prepared by depositing zirconium in an oxidizing environment onto a methane-pretreated 11-Å thick zirconium oxide film, which initially was deposited onto a gold substrate. The second metal deposition results in an outermost region composed of a mixed zirconium oxide, while below there is metallic zirconium followed by zirconium carbide and carbon on top of the first zirconium oxide film, which is itself in contact with the gold. The carbide component showed no changes on heating to 425°C, on treating with a hydrogen plasma at room temperature, or on heating the resulting film to 425°C. The oxide layers do show characteristic changes, and this also contrasts with earlier observations for a zirconium sulphide film. The zirconium carbide Zr3d 5/2 component has a binding energy of 180.6 eV.


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