X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering

2011 ◽  
Vol 3 (11) ◽  
pp. 4370-4373 ◽  
Author(s):  
C. V. Ramana ◽  
R. S. Vemuri ◽  
V. V. Kaichev ◽  
V. A. Kochubey ◽  
A. A. Saraev ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray

Microstructure and Oxidation Resistance of TiN Coatings

2013 ◽  
Vol 750-752 ◽  
pp. 2092-2095 ◽  
Author(s):  
Guo Zheng Nie ◽  
Chun Liang Zhong ◽  
Lan E Luo ◽  
Ren Long Zhou ◽  
Qiang Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Resistance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Tin Coating ◽  
X Ray ◽  
Tin Coatings ◽  
Cubic Structure

A series of TiN coatings were deposited by reactive magnetron sputtering with different target powers and different N2flows. The microstructure and oxidation resistance of TiN coatings were characterized by X-ray diffraction (XRD). The hardness of the thin films was characterized respectively with the nanoindentor. The effect of target powers and the N2flows on the microstructure, the hardness and oxidation resistance was studied. It was found that TiN coating deposited at different target powers and different N2flows exhibits a cubic structure with (1 1 1) preferred orientations, and the hardness of TiN coatings is 1200. The oxidation resistance of the TiN coatings is approximately 500°C.

W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 652-654 ◽  
pp. 1747-1750
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Cui Zhi Dong ◽  
Kuai Zhang ◽  
Xiudong Zhu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po2) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO2. The surface roughness of the film increase for the longer time annealing.

The Influences of Oxygen Content on Microstructures and Optical Properties of Al2O3 Films Deposited by Oxygen Ion Beam Assisted Pulse Reactive Magnetron Sputtering

2013 ◽  
Vol 750-752 ◽  
pp. 1891-1896
Author(s):  
Jin Xiao Wang ◽  
Zhi Min Wang ◽  
Yi Wang ◽  
Kai Zhao ◽  
Xiao Mei Su ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxygen Content ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray ◽  
Oxygen Ion

Al2O3films have been deposited at room temperature on polyimide substrates using oxygen ion beam assisted pulse reactive magnetron sputtering system in which aluminium sputtering is simultaneous with oxygen ion beam irradiation. A set of samples were prepared at different oxygen content and film characterizations have been carried out using X-ray diffraction (XRD) for film crystallization, atomic force microscopy (AFM) for surface morphology, and X-ray photoelectron spectroscopy (XPS) for elemental composition measurements and chemical bonding states. The films are smoother and near stoichiometric aluminum oxide as oxygen content increases up to 86%. All films are kept in amorphous structure. The optical properties of the films showed sensitive with oxygen content. Transparent films of refractive index 1.63 are obtained with a deposition rate as high as 70.3 nm/min by 86% oxygen ion beam assisted, which is about 5 times than the films by conventional reactive magnetron sputtering.

STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION

2011 ◽  
Vol 18 (01n02) ◽  
pp. 23-31 ◽  
Author(s):  
MANUEL GARCÍA-MÉNDEZ ◽  
SANTOS MORALES-RODRÍGUEZ ◽  
SADASIVAN SHAJI ◽  
BINDU KRISHNAN ◽  
PASCUAL BARTOLO-PÉREZ
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Preferential Growth ◽  
X Ray ◽  
Xps Characterization ◽  
Oxide Phases

A set of aluminium nitride ( AlN ) and oxidized AlN ( AlNO ) thin films were grown with the technique of direct current (dc) reactive magnetron sputtering. The main purpose of this investigation is to explore the influence of the oxygen on the structural properties of AlN and AlNO films. The crystalline properties and chemical identification of phases were studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Electrical properties were analyzed from I-V measurements. It was found that films crystallized under the AlN würzite structure and presented a polycrystalline preferential growth along [0001] direction, perpendicular to substrate. Small amounts of secondary aluminium oxide phases were detected too. The oxide phases can induce defects, which can alter crystallinity of films.

Structure and Oxidation Behavior CrN Thin Films Deposited Using DC Reactive Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 122-127
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Behavior ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Wafer Substrate

The CrN ceramic thin films were deposited using DC reactive magnetron sputtering system on silicon wafer substrate. Oxidation behavior was carried out in air at evaluated temperatures ranging from 500 °C up to 900 °C for 2 h. The structure and element composition of the films at different thermal annealing temperatures ranging were investigated by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS), respectively. The oxidation activation energies of the films were calculated using Arrhenius equation. The changes in the crystal structure from CrN to Cr2O3 phase were investigated from XRD results. The accumulation of grains on surface was confirmed by FESEM micrographs. The cross-section analysis showed an apparent columnar feature with dense structure for the film annealed at low temperature, and becomes porous when increasing the annealing temperature. The thickness was increased from 1.43 to 2.67 μm. The EDS studies indicated the existence of Cr, N and O with different elements compositions on the deposited thin films. The oxidation activation energy for the CrN thin films is 124.4 kJ/mol.

Deposition and Characterization of Nanocrystalline Al2O3 Thin Films by DC Reactive Magnetron Sputtering

2013 ◽  
Vol 678 ◽  
pp. 149-153 ◽  
Author(s):  
Sankaran Prasanna ◽  
P. Biji ◽  
G. Mohan Rao ◽  
M.D. Kannan ◽  
S. Jayakumar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Progressive Increase ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Force Microscopy ◽  
Si Substrates ◽  
Sputtering Power ◽  
Dc Reactive Magnetron Sputtering

Abstract: Alumina (Al2O3) thin films were deposited over glass and Si substrates by DC reactive magnetron sputtering at an oxygen partial pressure of 0.03 Pa. The presence of aluminium and oxygen was confirmed using x-ray photoelectron spectroscopy and the films were found to be nearly stoichiometric or oxygen rich at a sputtering power of 70 W and 60 W, respectively. The as-deposited films were found to be amorphous. Subsequent annealing experiments in vacuum revealed that crystallisation started at 550oC and increased thereafter at higher annealing temperatures for those films deposited at a sputtering power of 70 W. The topography of the as-deposited and annealed films was analyzed by Atomic force microscopy and a progressive increase in the rms roughness of the films was observed with increase in the annealing temperature and the results are discussed

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