X-Ray Studies of Chromium Nitride (CrxNy) Thin Films Deposited by Reactive Magnetron Sputtering

1992 ◽  
pp. 819-827 ◽  
Author(s):  
M. Charbonnier ◽  
M. Romand ◽  
A. Roche ◽  
J. P. Terrat
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Chromium Nitride ◽  
Reactive Magnetron ◽  
X Ray

Microstructure and Oxidation Resistance of TiN Coatings

2013 ◽  
Vol 750-752 ◽  
pp. 2092-2095 ◽  
Author(s):  
Guo Zheng Nie ◽  
Chun Liang Zhong ◽  
Lan E Luo ◽  
Ren Long Zhou ◽  
Qiang Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Resistance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Tin Coating ◽  
X Ray ◽  
Tin Coatings ◽  
Cubic Structure

A series of TiN coatings were deposited by reactive magnetron sputtering with different target powers and different N2flows. The microstructure and oxidation resistance of TiN coatings were characterized by X-ray diffraction (XRD). The hardness of the thin films was characterized respectively with the nanoindentor. The effect of target powers and the N2flows on the microstructure, the hardness and oxidation resistance was studied. It was found that TiN coating deposited at different target powers and different N2flows exhibits a cubic structure with (1 1 1) preferred orientations, and the hardness of TiN coatings is 1200. The oxidation resistance of the TiN coatings is approximately 500°C.

W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 652-654 ◽  
pp. 1747-1750
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Cui Zhi Dong ◽  
Kuai Zhang ◽  
Xiudong Zhu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po2) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO2. The surface roughness of the film increase for the longer time annealing.

Structure and Oxidation Behavior CrN Thin Films Deposited Using DC Reactive Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 122-127
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Behavior ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Wafer Substrate

The CrN ceramic thin films were deposited using DC reactive magnetron sputtering system on silicon wafer substrate. Oxidation behavior was carried out in air at evaluated temperatures ranging from 500 °C up to 900 °C for 2 h. The structure and element composition of the films at different thermal annealing temperatures ranging were investigated by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS), respectively. The oxidation activation energies of the films were calculated using Arrhenius equation. The changes in the crystal structure from CrN to Cr2O3 phase were investigated from XRD results. The accumulation of grains on surface was confirmed by FESEM micrographs. The cross-section analysis showed an apparent columnar feature with dense structure for the film annealed at low temperature, and becomes porous when increasing the annealing temperature. The thickness was increased from 1.43 to 2.67 μm. The EDS studies indicated the existence of Cr, N and O with different elements compositions on the deposited thin films. The oxidation activation energy for the CrN thin films is 124.4 kJ/mol.

X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering

2011 ◽  
Vol 3 (11) ◽  
pp. 4370-4373 ◽  
Author(s):  
C. V. Ramana ◽  
R. S. Vemuri ◽  
V. V. Kaichev ◽  
V. A. Kochubey ◽  
A. A. Saraev ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray
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