An energy-dispersive X-ray diffraction study of the nickel-sulfide assisted growth of RuS2 thin films by reactive magnetron sputtering

2013 ◽  
Vol 363 ◽  
pp. 277-281 ◽  
Author(s):  
Stephan Brunken ◽  
Jonas Krause ◽  
Klaus Ellmer
2013 ◽  
Vol 750-752 ◽  
pp. 2092-2095 ◽  
Author(s):  
Guo Zheng Nie ◽  
Chun Liang Zhong ◽  
Lan E Luo ◽  
Ren Long Zhou ◽  
Qiang Liu

A series of TiN coatings were deposited by reactive magnetron sputtering with different target powers and different N2flows. The microstructure and oxidation resistance of TiN coatings were characterized by X-ray diffraction (XRD). The hardness of the thin films was characterized respectively with the nanoindentor. The effect of target powers and the N2flows on the microstructure, the hardness and oxidation resistance was studied. It was found that TiN coating deposited at different target powers and different N2flows exhibits a cubic structure with (1 1 1) preferred orientations, and the hardness of TiN coatings is 1200. The oxidation resistance of the TiN coatings is approximately 500°C.


2019 ◽  
Vol 798 ◽  
pp. 122-127
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun

The CrN ceramic thin films were deposited using DC reactive magnetron sputtering system on silicon wafer substrate. Oxidation behavior was carried out in air at evaluated temperatures ranging from 500 °C up to 900 °C for 2 h. The structure and element composition of the films at different thermal annealing temperatures ranging were investigated by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS), respectively. The oxidation activation energies of the films were calculated using Arrhenius equation. The changes in the crystal structure from CrN to Cr2O3 phase were investigated from XRD results. The accumulation of grains on surface was confirmed by FESEM micrographs. The cross-section analysis showed an apparent columnar feature with dense structure for the film annealed at low temperature, and becomes porous when increasing the annealing temperature. The thickness was increased from 1.43 to 2.67 μm. The EDS studies indicated the existence of Cr, N and O with different elements compositions on the deposited thin films. The oxidation activation energy for the CrN thin films is 124.4 kJ/mol.


Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.


2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.


2012 ◽  
Vol 531 ◽  
pp. 3-6
Author(s):  
C.L. Zhong ◽  
L.E. Luo

A series of Cr1-xAlxN coatings were deposited by reactive magnetron sputtering. The content, microstructure and the hardness of the thin films were characterized respectively with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and nanoindentor. The effect of Al content on the microstructure and hardness was studied. It was found that Cr1-xAlxN compound coating exhibits a cubic structure with (1 1 1) preferred orientations and that the lattice parameter of Cr1-xAlxN coatings decrease with the increase of Al content. The hardness of Cr1-xAlxN compound coating is higher than that of CrN and increases with the increase of Al content.


2008 ◽  
Vol 136 ◽  
pp. 133-138 ◽  
Author(s):  
Satreerat K. Hodak ◽  
T. Seppänen ◽  
Sukkaneste Tungasmita

The ternary nitride (Zr,Ti)N thin films were grown on silicon substrates by ion-assisted dual d.c. reactive magnetron sputtering technique. The substrates were exposed to ion bombardment with varying kinetic energy in the range of 3-103 eV under N/Ar ratio of 1:3. The (Zr0.6Ti0.4)N was formed at all growth conditions. X-ray diffraction measurement indicates the presence of (Zr,Ti)N solid solution with (111) and (200) preferred orientations. The (200) orientation is only present when the films are grown at ion bombardment energies higher than 33 eV. Optimum conditions for film growth produced hardness in the range of 27-29 GPa.


1995 ◽  
Vol 405 ◽  
Author(s):  
S. M. Cho ◽  
K. Christensen ◽  
D. Wolfe ◽  
H. Ying ◽  
D. R. Lee ◽  
...  

AbstractWe have investigated on the effect of different substrate surfaces in changing the microstructure of μc-SixGe1-x:H films prepared by reactive magnetron sputtering. Films were deposited on hydrogen terminated Si(111), Si(100) surfaces, and surfaces chemical and plasma oxides. The thin film microstructure was characterized by Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and Raman scattering.


2009 ◽  
Vol 79-82 ◽  
pp. 489-492
Author(s):  
Jiang Ling Yue ◽  
Yan Sheng Yin ◽  
Ge Yang Li

A series of TiAlN/Si3N4 nano-multilayer films with various Si3N4 layer thicknesses were prepared by reactive magnetron sputtering. These multilayers were then annealed at temperatures ranging from 600 to 900°C in air for 1 hour. The composition, microstructure, and mechanical properties of the films were characterized by energy dispersive x-ray spectroscopy, x-ray diffraction, scanning electron microscopy, and nanoindentation. It reveals that under the template effect of TiAlN layers in multilayers, as-deposited amorphous Si3N4 is crystallized and grows coherently with TiAlN layers when Si3N4 layer thickness is below 0.6 nm. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. With further increase in the layer thickness, Si3N4 transforms into amorphous, resulting in a decrease of hardness and modulus. The TiAlN/Si3N4 nano-multilayers could retain their superlattice structure even up to 900°C. The small decrease in the hardness of multilayers annealed below 800°C was correlated to the release of compressive stress in multilayers. However, oxidation was found on the surface of multilayers when annealed at 800°C, which resulted in a marked decrease in the hardness of multilayers. The multilayers presented higher hardness as compared with the monolithic TiAlN film.


2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.


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