Chiral Chemical Synthesis of DNA Containing (S)-9-(1,3-Dihydroxy-2-propoxymethyl)guanine (DHPG) and Effects on Thermal Stability, Duplex Structure, and Thermodynamics of Duplex Formation

Biochemistry ◽  
1995 ◽  
Vol 34 (28) ◽  
pp. 9235-9248 ◽  
Author(s):  
Stephen J. Marshalko ◽  
Barry I. Schweitzer ◽  
G. Peter Beardsley
Keyword(s):  
Thermal Stability ◽  
Chemical Synthesis ◽  
Duplex Structure ◽  
Duplex Formation

scholarly journals Thermal Stability Changes in Telomeric G-Quadruplex Structures Due to N6-Methyladenine Modification

Epigenomes ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 5 ◽  
Author(s):  
Ryohei Wada ◽  
Wataru Yoshida
Keyword(s):  
Thermal Stability ◽  
Base Pair ◽  
Genomic Dna ◽  
Biological Functions ◽  
Duplex Structure ◽  
Stacking Interaction ◽  
Hybrid Type ◽  
G Quadruplex ◽  
Melting Analysis ◽  
Thermal Stability Of

N6-methyladenine modification (m6dA) has recently been identified in eukaryote genomic DNA. The methylation destabilizes the duplex structure when the adenine forms a Watson–Crick base pair, whereas the methylation on a terminal unpaired adenine stabilizes the duplex structure by increasing the stacking interaction. In this study, the effects of m6dA modification on the thermal stability of four distinct telomeric G-quadruplex (G4) structures were investigated. The m6dA-modified telomeric oligonucleotide d[AGGG(TTAGGG)3] that forms a basket-type G4 in Na+, d[(TTAGGG)4TT] that forms a hybrid-type G4 in K+ (Form-2), d[AAAGGG(TTAGGG)3AA] that forms a hybrid-type G4 in K+ (Form-1), and d[GGG(TTAGGG)3T] that forms a basket-type G4 with two G-tetrads in K+ (Form-3) were analyzed. Circular dichroism melting analysis demonstrated that (1) A7- and A19-methylation destabilized the basket-type G4 structure that formed in Na+, whereas A13-methylation stabilized the structure; (2) A15-methylation stabilized the Form-2 G4 structure; (3) A15- and A21-methylations stabilized the Form-1 G4 structure; and (4) A12-methylation stabilized the Form-3 G4 structure. These results suggest that m6dA modifications may affect the thermal stability of human telomeric G4 structures in regulating the biological functions.

scholarly journals Total Chemical Synthesis of an Intra-A-Chain Cystathionine Human Insulin Analogue with Enhanced Thermal Stability

2016 ◽  
Vol 128 (47) ◽  
pp. 14963-14967 ◽  
Author(s):  
John A. Karas ◽  
Nitin A. Patil ◽  
Julien Tailhades ◽  
Marc-Antoine Sani ◽  
Denis B. Scanlon ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Synthesis ◽  
Human Insulin ◽  
Insulin Analogue ◽  
A Chain

scholarly journals Total Chemical Synthesis of an Intra-A-Chain Cystathionine Human Insulin Analogue with Enhanced Thermal Stability

2016 ◽  
Vol 55 (47) ◽  
pp. 14743-14747 ◽  
Author(s):  
John A. Karas ◽  
Nitin A. Patil ◽  
Julien Tailhades ◽  
Marc-Antoine Sani ◽  
Denis B. Scanlon ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Synthesis ◽  
Human Insulin ◽  
Insulin Analogue ◽  
A Chain

scholarly journals Examining the role of phosphorylation of p19INK4d in its stability and ubiquitination using chemical protein synthesis

2020 ◽  
Vol 11 (21) ◽  
pp. 5526-5531
Author(s):  
Muna Msallam ◽  
Hao Sun ◽  
Roman Meledin ◽  
Pauline Franz ◽  
Ashraf Brik
Keyword(s):  
Thermal Stability ◽  
Protein Synthesis ◽  
Circular Dichroism ◽  
Chemical Synthesis ◽  
Biochemical Methods ◽  
Chemical Protein Synthesis ◽  
Circular Dichroïsm

This study describes the chemical synthesis of unmodified and phosphorylated p19INK4d that were characterized by circular dichroism and biochemical methods to examine the effect of phosphorylation on the thermal stability and ubiquitination.

Mechano-chemical synthesis, thermal stability and phase evolution in AlCoCrFeNiMn high entropy alloy

2018 ◽  
Vol 757 ◽  
pp. 87-97 ◽  
Author(s):  
Vikas Shivam ◽  
Joysurya Basu ◽  
Yagnesh Shadangi ◽  
Manish Kumar Singh ◽  
N.K. Mukhopadhyay
Keyword(s):  
Thermal Stability ◽  
Chemical Synthesis ◽  
Phase Evolution ◽  
High Entropy Alloy ◽  
High Entropy

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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