Evaluation of All-Atom Force Fields for Anthracene Crystal Growth

2015 ◽  
Vol 15 (4) ◽  
pp. 1625-1633 ◽  
Author(s):  
Peter Grančič ◽  
Rita Bylsma ◽  
Hugo Meekes ◽  
Herma M. Cuppen
Keyword(s):  
Crystal Growth ◽  
Force Fields ◽  
Anthracene Crystal

Dibenzoterrylene-doped anthracene crystal growth for quantum photonic applications

2016 ◽  
Author(s):  
Alex S. Clark ◽  
Sebastien Boissier ◽  
Claudio Polisseni ◽  
Samuele Grandi ◽  
Kyle Major ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Anthracene Crystal

Crystal Growth from the Melt under External Force Fields

MRS Bulletin ◽  
2009 ◽  
Vol 34 (4) ◽  
pp. 251-258 ◽  
Author(s):  
P. Rudolph ◽  
K. Kakimoto
Keyword(s):  
Crystal Growth ◽  
External Force ◽  
Force Fields ◽  
Low Cost ◽  
Turbulent Heat ◽  
Magnetic Field Generation ◽  
Bulk Crystal Growth ◽  
Mass Flows ◽  
Future Demands ◽  
And Control

AbstractThe present and future demands of industrial bulk crystal growth from the melt are concentrated on improved crystal quality, increased yield, and reduced costs. To meet these challenges, the size of the melt volume must be markedly increased. As a result, violent convective perturbations appear within the melts due to turbulent heat and mass flows. They disturb the single crystal growth and give rise to compositional inhomogeneities. The application of external force fields is an effective method to dampen and control these flows. After introducing different stabilizing variants, such as constant and accelerated melt rotation, mechanical vibrations, and electric current, this article focuses on the use of magnetic fields. Nonsteady fields became very popular because, in this case, the needed strength of the magnetic induction is much lower than for steady fields. A new low-energy low-cost technology that combines heat and magnetic field generation in one module placed close to the melt crucible is introduced.

Use of the Magnetostatic Analogue In Electromagnetic Lens Engineering

1970 ◽  
Vol 28 ◽  
pp. 360-361
Author(s):  
John W. Coleman
Keyword(s):  
Boundary Conditions ◽  
High Performance ◽  
Force Fields ◽  
Optical Design ◽  
Direct Conversion ◽  
Design Engineering ◽  
Design Data ◽  
Scalar Potentials ◽  
Geometric Elements ◽  
At Will

In the design engineering of high performance electromagnetic lenses, the direct conversion of electron optical design data into drawings for reliable hardware is oftentimes difficult, especially in terms of how to mount parts to each other, how to tolerance dimensions, and how to specify finishes. An answer to this is in the use of magnetostatic analytics, corresponding to boundary conditions for the optical design. With such models, the magnetostatic force on a test pole along the axis may be examined, and in this way one may obtain priority listings for holding dimensions, relieving stresses, etc..The development of magnetostatic models most easily proceeds from the derivation of scalar potentials of separate geometric elements. These potentials can then be conbined at will because of the superposition characteristic of conservative force fields.

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Crystal growth of giant magnetostrictive Tb_Dy_Fe alloy

1997 ◽  
Vol 258 ◽  
pp. 34-38
Author(s):  
W Mei
Keyword(s):  
Crystal Growth

Crystal Structures of Tetragonal NdPc2O and NdPc2Clx,O1-x Obtained from NdPc2H by Anodic Crystal Growth

1988 ◽  
Vol 156 (1) ◽  
pp. 247-256 ◽  
Author(s):  
Mireille Mossoyan-deneux ◽  
David Benlian ◽  
Andre Baldy ◽  
Marcel Pierrot
Keyword(s):  
Crystal Growth ◽  
Crystal Structures
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