Formation of Ge−S Bonds from AOT-Coated GeO2Nanoparticles at High Temperature: An in Situ Heating EXAFS Investigation

2008 ◽  
Vol 20 (8) ◽  
pp. 2757-2762 ◽  
Author(s):  
Xing Chen ◽  
Quan Cai ◽  
Wei Wang ◽  
Guang Mo ◽  
Longsheng Jiang ◽  
...  
2019 ◽  
Vol 7 (3) ◽  
pp. 553-557 ◽  
Author(s):  
Hongqiang Zhu ◽  
Weiyao Jia ◽  
Lixiang Chen ◽  
Xiantong Tang ◽  
Yeqian Hu ◽  
...  

An in situ heating method was used to investigate the effect of high temperature on the magneto-electroluminescence (MEL) of rubrene-based organic light-emitting diodes.


2009 ◽  
Vol 62 (5) ◽  
pp. 531-542 ◽  
Author(s):  
Kenji Kubota ◽  
Koichi Suzuki ◽  
Takafumi Ikenoya ◽  
Nozomu Takakura ◽  
Kazuo Tani

Author(s):  
J. R. Reed ◽  
D. J. Michel ◽  
P. R. Howell

The Al6Li3Cu (T2) phase, which exhibits five-fold or icosahedral symmetry, forms through solid state precipitation in dilute Al-Li-Cu alloys. Recent studies have reported that the T2 phase transforms either during TEM examination of thin foils or following ion-milling of thin foil specimens. Related studies have shown that T2 phase transforms to a microcrystalline array of the TB phase and a dilute aluminum solid solution during in-situ heating in the TEM. The purpose of this paper is to report results from an investigation of the influence of ion-milling on the stability of the T2 phase in dilute Al-Li-Cu alloy.The 3-mm diameter TEM disc specimens were prepared from a specially melted Al-2.5%Li-2.5%Cu alloy produced by conventional procedures. The TEM specimens were solution heat treated 1 h at 550°C and aged 1000 h at 190°C in air to develop the microstructure. The disc specimens were electropolished to achieve electron transparency using a 20:80 (vol. percent) nitric acid: methanol solution at -60°C.


Author(s):  
N. Rozhanski ◽  
A. Barg

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.


2012 ◽  
Vol 18 (S2) ◽  
pp. 1118-1119 ◽  
Author(s):  
L. Allard ◽  
S.H. Overbury ◽  
M.B. Katz ◽  
W.C. Bigelow ◽  
D. Nackashi ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


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