Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

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B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽

10.1039/d1nr07054a ◽

2021 ◽

Author(s):

Shuyi Lin ◽

Yu Guo ◽

Meiling Xu ◽

Jijun Zhao ◽

Yiwei Liang ◽

...

Keyword(s):

Band Gap ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Two Dimensional ◽

Planar Lattice ◽

Direct Band Gap ◽

Two Dimensional Materials ◽

Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

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Novel Two-dimensional Group-IV Carbides Containing C2 Dimers: Sizable Direct Band Gap, High Carrier Mobility, and Anisotropic Properties for Nanoelectronics

Carbon ◽

10.1016/j.carbon.2021.04.092 ◽

2021 ◽

Author(s):

Mehmet Emin Kilic ◽

Kwang-Ryeol Lee

Keyword(s):

Band Gap ◽

Carrier Mobility ◽

Group Iv ◽

Two Dimensional ◽

Anisotropic Properties ◽

Direct Band Gap ◽

Dimensional Group ◽

Direct Band ◽

High Carrier Mobility ◽

High Carrier

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Two-dimensional Blue-AsP monolayers with tunable direct band gap and ultrahigh carrier mobility show promising high-performance photovoltaic properties

Nanoscale ◽

10.1039/c9nr01261c ◽

2019 ◽

Vol 11 (17) ◽

pp. 8260-8269 ◽

Cited By ~ 7

Author(s):

Xinyong Cai ◽

Yuanzheng Chen ◽

Bai Sun ◽

Jiao Chen ◽

Hongyan Wang ◽

...

Keyword(s):

Band Gap ◽

High Performance ◽

Carrier Mobility ◽

Two Dimensional ◽

Photovoltaic Properties ◽

Direct Band Gap ◽

Direct Band

Novel 2D Blue-AsP sheets show promising high-performance photovoltaic properties.

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Copper(i) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility

Nanoscale Horizons ◽

10.1039/c8nh00216a ◽

2019 ◽

Vol 4 (1) ◽

pp. 223-230 ◽

Cited By ~ 18

Author(s):

Yu Guo ◽

Qisheng Wu ◽

Yunhai Li ◽

Ning Lu ◽

Keke Mao ◽

...

Keyword(s):

Band Gap ◽

Oxidation Resistance ◽

Carrier Mobility ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band ◽

High Carrier Mobility ◽

High Carrier

δ-Cu2S sheets are energetically favorable, and exhibit superior oxidation resistance, suitable direct band gap, and ultrahigh carrier mobility.

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A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility

Physical Chemistry Chemical Physics ◽

10.1039/c6cp06332b ◽

2016 ◽

Vol 18 (44) ◽

pp. 30379-30384 ◽

Cited By ~ 16

Author(s):

Peng-Fei Liu ◽

Liujiang Zhou ◽

Thomas Frauenheim ◽

Li-Ming Wu

Keyword(s):

Band Gap ◽

Carrier Mobility ◽

High Stability ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band ◽

High Carrier Mobility ◽

High Carrier

A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.

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Theoretical investigations of a new two-dimensional semiconducting boron–carbon–nitrogen structure

RSC Advances ◽

10.1039/c9ra09723f ◽

2020 ◽

Vol 10 (6) ◽

pp. 3424-3428

Author(s):

Yihua Lu ◽

Xi Zhu ◽

Min Wang

Keyword(s):

Band Gap ◽

Two Dimensional ◽

Direct Band Gap ◽

Theoretical Investigations ◽

Direct Band ◽

Optical Applications ◽

Boron Carbon

A predicted 2D BCN structure has a direct band gap and is a good candidate for electronic and optical applications.

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Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScCxOH, a Direct Band Gap Semiconductor

ACS Nano ◽

10.1021/acsnano.8b06279 ◽

2019 ◽

Cited By ~ 3

Author(s):

Jie Zhou ◽

Xian-Hu Zha ◽

Melike Yildizhan ◽

Per Eklund ◽

Jianming Xue ◽

...

Keyword(s):

Band Gap ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band

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Valley-selective circular dichroism and high carrier mobility of graphene-like BC6N

Nanoscale ◽

10.1039/c8nr03080d ◽

2018 ◽

Vol 10 (27) ◽

pp. 13179-13186 ◽

Cited By ~ 14

Author(s):

Xiaobiao Liu ◽

Xikui Ma ◽

Han Gao ◽

Xiaoming Zhang ◽

Haoqiang Ai ◽

...

Keyword(s):

Circular Dichroism ◽

Band Gap ◽

Carrier Mobility ◽

Direct Band Gap ◽

Black Phosphorene ◽

Direct Band ◽

High Carrier Mobility ◽

High Carrier ◽

Circular Dichroïsm

Graphene-like borocarbonitride (g-BC6N) has a direct-band gap of 1.833 eV, high carrier mobility comparable to that of black phosphorene and a pair of inequivalent valleys with opposite Berry curvatures in K and K′ points.

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