Toward an Atomic-Scale Understanding of Electrochemical Interface Structure and Dynamics

2019 ◽  
Vol 141 (12) ◽  
pp. 4777-4790 ◽  
Author(s):  
Olaf M. Magnussen ◽  
Axel Groß
Keyword(s):  
Interface Structure ◽  
Atomic Scale ◽  
Structure And Dynamics ◽  
Electrochemical Interface

Atomic-scale analysis of the interface structure and lattice mismatch relaxation of Bi2Sr2CaCu2O8+δ/SrTiO3 heterostructure

2020 ◽  
Author(s):  
Jian Zhang ◽  
Weizhen Wang ◽  
Tianlin Wang ◽  
Lili Jiang ◽  
Nan Wang ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Interface Structure ◽  
Atomic Scale ◽  
Scale Analysis

Structure and dynamics of gold nanoparticles decorated with chitosan–gentamicin conjugates: ReaxFF molecular dynamics simulations to disclose drug delivery

2019 ◽  
Vol 21 (24) ◽  
pp. 13099-13108 ◽  
Author(s):  
Susanna Monti ◽  
Jiya Jose ◽  
Athira Sahajan ◽  
Nandakumar Kalarikkal ◽  
Sabu Thomas
Keyword(s):  
Drug Delivery ◽  
Molecular Dynamics ◽  
Gold Nanoparticles ◽  
Molecular Dynamics Simulations ◽  
Atomic Scale ◽  
Functionalized Gold Nanoparticles ◽  
Structure And Dynamics ◽  
Antibiotic Drug ◽  
Dynamics Simulations

Functionalized gold nanoparticles for antibiotic drug delivery: from the nanoscale to the atomic scale.

scholarly journals Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO 3 Thin Films Grown on SrTiO 3 Substrates

2020 ◽  
Vol 14 (6) ◽  
pp. 2000054
Author(s):  
Lei Jin ◽  
Michael Zapf ◽  
Martin Stübinger ◽  
Martin Kamp ◽  
Michael Sing ◽  
...  
Keyword(s):  
Thin Films ◽  
Interface Structure ◽  
Atomic Scale

Approach to Determine Electrochemical Interface Structure from Surface Optical Spectroscopy

1997 ◽  
Vol 51 (3) ◽  
pp. 323-331 ◽  
Author(s):  
R. Georgiadis ◽  
S. G. Lambrakos ◽  
P. P. Trzaskoma-Paulette
Keyword(s):  
Response Function ◽  
Second Harmonic ◽  
Interface Structure ◽  
Experimental Measurements ◽  
Surface Optical ◽  
Electrochemical Interface ◽  
First Time ◽  
General Method

We present a general approach for establishing correlations between the optical second-harmonic (SH) response generated from a metal/electrolyte interface and the interface structure. Our approach entails the construction of a response function for optical second-harmonic generation (SHG) from the metal surface in the presence of an electrolyte and an applied electrochemical field. The response function approach, a powerful and general method, is developed here for the first time for SHG data. Here, the response function describes the nonlinear optical response of a mesoscopic region of the surface to an applied static mesoscopic electric field and is a characterization of how the electrostatic nature of the surface responds to changes in the concentration and composition of the electrolyte. We construct the response function from experimental measurements of the SH response and from models representing known interface structure. A significant aspect of our approach is that it combines, through the modification of the response function, existing models of metal-interface structure with models for mechanisms of SHG response. Our approach provides, therefore, a framework for correlating existing and emerging models of the double layer with optical experimental measurements. Case study analyses of prototype interface systems are presented here, demonstrating applications of our approach.

Anisotropy in Atomic-Scale Interface Structure and Mobility in Inas/Ga1_Xinxsb Superlattices

1996 ◽  
Vol 448 ◽  
Author(s):  
A. Y. Lew ◽  
S. L. Zuo ◽  
E. T. Yu ◽  
R. H. Miles
Keyword(s):  
Quantitative Analysis ◽  
Molecular Beam ◽  
Interface Structure ◽  
Interface Roughness ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Interfacial Bond ◽  
Tunneling Microscopy ◽  
Cross Sectional

AbstractWe have used cross-sectional scanning tunneling microscopy to study the atomic-scale interface structure of InAs/Ga, _In.xSb superlattices grown by molecular-beam epitaxy. Detailed, quantitative analysis of interface profiles obtained from constant-current images of both (110) and (1ī0) cross-sectional planes of the superlattice indicates that interfaces in the (1ī0) plane exhibit a higher degree of interface roughness than those in the (110) plane, and that the Ga1-xln xAs interfaces are rougher than the InAs-on-Gal1-xInxSb interfaces. The roughness data are consistent with anisotropy in interface structure arising from anisotropic island formation during growth, and in addition with a growth-sequence-dependent interface asymmetry resulting from differences in interfacial bond structure between the superlattice layers. Roughness data are compared with measurements of anisotropy in low-temperature Hall mobilities of the samples.

Structure of a-Si:H/SnO2 Interface Characterized By Xps

1990 ◽  
Vol 192 ◽  
Author(s):  
H. Koinuma ◽  
M. Nakano ◽  
S. Gonda
Keyword(s):  
Glow Discharge ◽  
Bottom Layer ◽  
Interface Structure ◽  
Atomic Scale ◽  
Photoelectron Emission ◽  
In Situ Xps

ABSTRACTThe interface structure of a-Si:H films deposited by glow discharge decomposition of Si2H6 on SnO2 was characterized on an atomic scale with the use of in situ XPS. The method analyzes the variation of the intensity of photoelectron emission originating from the bottom SnO2 layer and transmitting through the upper a-Si:H layers of various thicknesses. It was evaluated that a-Si:H was partially oxidized as it grew to a thickness of about 15 A, while the SnO2 bottom layer was reduced to metallic Sn and SnOx (0 < x < 2) states as deep as 2 A and 12 A from the interface, respectively,

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