Electrochemical and Corrosion Stability of Nanostructured Silicon by Graphene Coatings: Toward High Power Porous Silicon Supercapacitors

2014 ◽  
Vol 118 (20) ◽  
pp. 10893-10902 ◽  
Author(s):  
Shahana Chatterjee ◽  
Rachel Carter ◽  
Landon Oakes ◽  
William R. Erwin ◽  
Rizia Bardhan ◽  
...  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
E. S. GOLOMAKO ◽  
S. O. SHUMLYAEV ◽  
...  

Numerous studies have demonstrated the potential use of porous silicon (pSi) as an energetic material. However, there are a number of dificulties in such an application of nanostructured silicon. Here are two of the most serious dificulties.


2017 ◽  
Vol 231 (9) ◽  
Author(s):  
Sangeetha Periasamy ◽  
Sasirekha Venkidusamy ◽  
Ragavendran Venkatesan ◽  
Jeyanthinath Mayandi ◽  
Joshua Pearce ◽  
...  

Abstract:The size effect of nanoscale silicon in both amorphous and porous silicon was investigated with micro-Raman spectroscopy. Silicon nanostructures in amorphous silicon were deposited on quartz substrates by plasma enhanced chemical vapor deposition (PECVD) with deposition powers of 15, 30 and 50 W. Micro-Raman spectra of the nanostructured silicon show the T


Nanoscale ◽  
2015 ◽  
Vol 7 (1) ◽  
pp. 98-103 ◽  
Author(s):  
Andrew S. Westover ◽  
Daniel Freudiger ◽  
Zarif S. Gani ◽  
Keith Share ◽  
Landon Oakes ◽  
...  

We demonstrate the operation of a graphene-passivated on-chip porous silicon material as a high rate lithium battery anode with over 50X power density, and 100X energy density improvement compared to identically prepared on-chip supercapacitors.


2015 ◽  
Author(s):  
Andrew S. Westover ◽  
Daniel Freudiger ◽  
Zarif Gani ◽  
Keith Share ◽  
Landon Oakes ◽  
...  

Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
E. S. GOLOMAKO ◽  
S. O. SHUMLYAEV ◽  
...  

Currently, various groups of scientists are investigating the possibility of using nanostructured porous silicon as promising solid fuels (or additives to composite solid fuels) and as miniature energy sources for microelectromechanical systems. The results presented in the paper demonstrate the prospects of the proposed novations aimed at increasing the efficiency of nanoporous silicon as an energetic material. They are based on the use of mounds of porous silicon fragments treated with sodium perchlorate solutions and dried under low warming (MPSF-composites) as energy composites. For example, when the weights of the MPSF-composites and the porous layer composites on monocrystal substrates treated with sodium perchlorate solutions (PS-composites) are close to each other, the overpressure at the front of the shock waves developing at the initiation and propagation of combustion in the case of MPSF-composites is 5-6 times higher.


2017 ◽  
Vol 38 (6) ◽  
pp. 701-704
Author(s):  
Jia-Chuan Lin ◽  
Liang-Fang Wan ◽  
Kuan-Wen Liu ◽  
Kuo-Chang Lo ◽  
Mei-Ling Yeh ◽  
...  
Keyword(s):  

2003 ◽  
Vol 797 ◽  
Author(s):  
J. Diener ◽  
N. Künzner ◽  
E. Gross ◽  
D. Kovalev ◽  
M. Fujii

ABSTRACTAnisotropic nanostructuring of bulk silicon (Si) leads to a significant optical anisotropy of single porous silicon (PSi) layers. A variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in plane an in depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization sensitive, silicon-based optical devices: retarders, dichroic Bragg Reflectors, dichroic microcavities and Si based polarizers.


2009 ◽  
Vol 35 (5) ◽  
pp. 446-448 ◽  
Author(s):  
V. S. Kovivchak ◽  
N. A. Davletkil’deev
Keyword(s):  

Author(s):  
А.В. Кожемяко ◽  
А.П. Евсеев ◽  
Ю.В. Балакшин ◽  
А.А. Шемухин

Irradiations of the nanostructured silicon with Si+ and He+ ions were carried out with energies of 200 and 150 keV, respectively. Raman scattering showed destruction of the structure after irradiations and accumulation of defects at different fluences of irradiation. It is shown that monocrystalline silicon films are amorphized under irradiation at 0.7 displacement per atom. However, porous silicon does not completely amorphize at 0.5 displacement per atom, a weak signal is observed in the Raman spectra corresponding to the amorphous silicon phase, and at the same time there is an obvious signal from the crystalline phase of silicon. The size of nanocrystallites in the structure of porous silicon was estimated at different fluences of irradiation.


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