Особенности дефектообразования в наноструктурированном кремнии при ионном облучении

Irradiations of the nanostructured silicon with Si+ and He+ ions were carried out with energies of 200 and 150 keV, respectively. Raman scattering showed destruction of the structure after irradiations and accumulation of defects at different fluences of irradiation. It is shown that monocrystalline silicon films are amorphized under irradiation at 0.7 displacement per atom. However, porous silicon does not completely amorphize at 0.5 displacement per atom, a weak signal is observed in the Raman spectra corresponding to the amorphous silicon phase, and at the same time there is an obvious signal from the crystalline phase of silicon. The size of nanocrystallites in the structure of porous silicon was estimated at different fluences of irradiation.

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Micro-Raman Scattering of Nanoscale Silicon in Amorphous and Porous Silicon

Zeitschrift für Physikalische Chemie ◽

10.1515/zpch-2016-0961 ◽

2017 ◽

Vol 231 (9) ◽

Cited By ~ 4

Author(s):

Sangeetha Periasamy ◽

Sasirekha Venkidusamy ◽

Ragavendran Venkatesan ◽

Jeyanthinath Mayandi ◽

Joshua Pearce ◽

...

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Porous Silicon ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Nanostructures ◽

Micro Raman Spectroscopy ◽

Nanostructured Silicon ◽

Quartz Substrates

Abstract:The size effect of nanoscale silicon in both amorphous and porous silicon was investigated with micro-Raman spectroscopy. Silicon nanostructures in amorphous silicon were deposited on quartz substrates by plasma enhanced chemical vapor deposition (PECVD) with deposition powers of 15, 30 and 50 W. Micro-Raman spectra of the nanostructured silicon show the T

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STRUCTURAL AND OPTICAL FEATURES OF POROUS SILICON PREPARED BY ELECTROCHEMICAL ANODIC ETCHING

Surface Review and Letters ◽

10.1142/s0218625x09012342 ◽

2009 ◽

Vol 16 (01) ◽

pp. 93-97 ◽

Cited By ~ 2

Author(s):

L. S. CHUAH ◽

Z. HASSAN ◽

F. K. YAM ◽

H. ABU HASSAN

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Porous Silicon ◽

Raman Scattering ◽

Raman Spectra ◽

Raman Peak ◽

Sem Images ◽

Anodic Etching ◽

Etching Duration ◽

Scanning Electron

Porous silicon (PS) samples were prepared by electrochemical anodic etching of n-type (111) silicon wafers in HF solution. The structural, optical, and chemical features of the PS were investigated in terms of different etching durations. The porous samples were investigated by scanning electron microscopy (SEM), photoluminescence (PL), and Raman scattering. SEM images indicated that the pores increased with the etching duration; however, the etching duration has significant effect on the shape of the pores. PL measurements revealed that the porosity-induced PL intensity enhancement was only observed in the porous samples. Raman spectra showed shifting of PS Raman peak to lower frequency relative to non-porous silicon Raman peak.

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Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon

Applied Physics Letters ◽

10.1063/1.107837 ◽

1992 ◽

Vol 61 (5) ◽

pp. 563-565 ◽

Cited By ~ 141

Author(s):

J. M. Perez ◽

J. Villalobos ◽

P. McNeill ◽

J. Prasad ◽

R. Cheek ◽

...

Keyword(s):

Porous Silicon ◽

Amorphous Silicon ◽

Direct Evidence ◽

Silicon Phase

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Raman Scattering in Electrochemically Prepared Porous Silicon

MRS Proceedings ◽

10.1557/proc-256-69 ◽

1991 ◽

Vol 256 ◽

Cited By ~ 3

Author(s):

Y. -J. Wu ◽

X. -S. Zhao ◽

P. D. Persans

Keyword(s):

Porous Silicon ◽

Raman Scattering ◽

Amorphous Silicon ◽

Room Temperature ◽

High Efficiency ◽

Silicon Oxide ◽

Electrochemical Etching ◽

Visible Range ◽

Microcrystalline Silicon ◽

Hydrogenated Amorphous

ABSTRACTPorous silicon of various porosity has been prepared by electrochemical etching of silicon with different doping levels. Room temperature photoluminescence in the visible range is observed from the powder scraped from the top layer of the etched samples. In this paper we use Raman scattering to characterize the source of the high efficiency photoluminescence. We have also studied microcrystalline silicon prepared by thermal annealing of hydrogenated amorphous silicon/amorphous silicon oxide multilayers.

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RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981616 ◽

1981 ◽

Vol 42 (C6) ◽

pp. C6-54-C6-56 ◽

Cited By ~ 4

Author(s):

S. T. Kshirsagar ◽

J. S. Lannin

Keyword(s):

Raman Scattering ◽

Amorphous Silicon

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Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

Ukrainian Journal of Physics ◽

10.15407/ujpe65.3.236 ◽

2020 ◽

Vol 65 (3) ◽

pp. 236

Author(s):

R. M. Rudenko ◽

O. O. Voitsihovska ◽

V. V. Voitovych ◽

M. M. Kras’ko ◽

A. G. Kolosyuk ◽

...

Keyword(s):

Amorphous Silicon ◽

Crystalline Silicon ◽

Solid Phase ◽

Nanocrystalline Silicon ◽

Recrystallization Temperature ◽

Nanocrystalline Phase ◽

Silicon Phase ◽

Silicon Nanocrystallites ◽

Lower Temperature ◽

Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

Scientific Reports ◽

10.1038/s41598-020-79411-x ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

M. Osiekowicz ◽

D. Staszczuk ◽

K. Olkowska-Pucko ◽

Ł. Kipczak ◽

M. Grzeszczyk ◽

...

Keyword(s):

Raman Scattering ◽

Temperature Effect ◽

Band Gap ◽

Raman Spectra ◽

Quantum Interference ◽

Optical Band Gap ◽

Phonon Coupling ◽

Phonon Modes ◽

Electron Phonon Coupling ◽

Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

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