Layered Molecular Ordering of Self-Organized Poly(3-hexylthiophene) Thin Films on Hydrophobized Surfaces

2006 ◽  
Vol 39 (17) ◽  
pp. 5843-5847 ◽  
Author(s):  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Yeong Don Park ◽  
Kilwon Cho
Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1188
Author(s):  
Mingu Jang ◽  
Yang-Il Huh ◽  
Mincheol Chang

We systematically studied the influence of solvent vapor annealing on the molecular ordering, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) thin films embedded with preformed crystalline P3HT nanowires (NWs). Solvent vapor annealing (SVA) with chloroform (CF) was found to profoundly impact on the structural and morphological changes, and thus on the charge transport characteristics, of the P3HT-NW-embedded P3HT films. With increased annealing time, the density of crystalline P3HT NWs was increased within the resultant films, and also intra- and intermolecular interactions of the corresponding films were significantly improved. As a result, the P3HT-NW-embedded P3HT films annealed with CF vapor for 20 min resulted in a maximized charge carrier mobility of ~0.102 cm2 V−1 s−1, which is higher than that of pristine P3HT films by 4.4-fold (μ = ~0.023 cm2 V−1 s−1).


2015 ◽  
Vol 6 (10) ◽  
pp. 1834-1840 ◽  
Author(s):  
Naveen Rawat ◽  
Zhenwen Pan ◽  
Lane W. Manning ◽  
Cody J. Lamarche ◽  
Ishviene Cour ◽  
...  

Langmuir ◽  
2015 ◽  
Vol 31 (45) ◽  
pp. 12505-12511 ◽  
Author(s):  
Priyanka Sachan ◽  
Manish Kulkarni ◽  
Ashutosh Sharma

2015 ◽  
Vol 119 (38) ◽  
pp. 21767-21774 ◽  
Author(s):  
Karthik Krishnan ◽  
Hiroko Iwatsuki ◽  
Mitsuo Hara ◽  
Shusaku Nagano ◽  
Yuki Nagao

2002 ◽  
Vol 17 (1) ◽  
pp. 115-126 ◽  
Author(s):  
Maggie Paulose ◽  
Oomman K. Varghese ◽  
Craig A. Grimes

Sol-gel-derived metal oxide ceramic thin films deposited onto amorphous iron-rich substrates were found to form self-organized nanoporous structures dependent upon the extent to which the substrate is de-alloyed, a function of the substrate alloycomposition, acid concentration of the sol, and film drying conditions. Field emission scanning electron microscopy, transmission electron microscopy, and x-ray energy dispersive analysis were used to investigate details of the porous structure formation.Our studies showed the more electrochemically active elements in the amorphous substrate are de-alloyed by the sol in high-humidity environments, whereupon the liberated elements form oxides replicating the de-alloyed substrate matrix resulting in athree dimensional porous network structure.


2006 ◽  
Vol 8 (12) ◽  
pp. 1840-1844 ◽  
Author(s):  
Yesudas Daniel Premchand ◽  
Thierry Djenizian ◽  
Florence Vacandio ◽  
Philippe Knauth

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2284
Author(s):  
Y. K. Sa ◽  
Junghwan Bang ◽  
Junhyuk Son ◽  
Dong-Yurl Yu ◽  
Yun-Chan Kim

This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indentation was 13 GPa, which was substantially higher than the value of 6 GPa for a porous low-k film deposited by a conventional method, while dielectric constant exhibited an identical value of 2.1. They also showed excellent resistance against viscoplastic deformation, as measured by the ball indentation method, which represented the degree of chemical degradation of the internal bonds. Indentation depth was measured at 5 nm after a 4-h indentation test at 400 °C, which indicated an ~89% decrease compared with conventional SiCOH film. Evolution of film shrinkage and dielectric constant after annealing and plasma exposure were reduced in the low-k film with a self-organized molecular film. Analysis of the film structure via Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) indicated an increase in symmetric linear Si–O–Si molecular chains with terminal –CH3 bonds that were believed to be responsible for both the decrease in dipole moment/dielectric constant and the formation of molecular scaled pores. The observed enhanced mechanical and chemical properties were also attributed to this unique nano-porous structure.


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