Layer Number and Stacking Sequence Imaging of Few-Layer Graphene by Transmission Electron Microscopy

Nano Letters ◽  
2012 ◽  
Vol 12 (9) ◽  
pp. 4635-4641 ◽  
Author(s):  
Jinglei Ping ◽  
Michael S. Fuhrer
2009 ◽  
Vol 1 (12) ◽  
pp. 2886-2892 ◽  
Author(s):  
James R. McBride ◽  
Andrew R. Lupini ◽  
Michael A. Schreuder ◽  
Nathanael J. Smith ◽  
Stephen J. Pennycook ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1672
Author(s):  
Faridul Islam ◽  
Arash Tahmasebi ◽  
Rou Wang ◽  
Jianglong Yu

Metal-supported few-layer graphene (FLG) was synthesized via microwave-assisted catalytic graphitization owing to the increasing demand for it and its wide applications. In this study, we quickly converted earth-abundant and low-cost bituminous coal to FLG over Fe catalysts at a temperature of 1300 °C. X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and N2 adsorption–desorption experiments were performed to analyze the fabricated metal-supported FLG. The results indicated that the microwave-irradiation temperature at a set holding-time played a critical role in the synthesis of metal-supported FLG. The highest degree of graphitization and a well-developed pore structure were fabricated at 1300 °C using a S10% Fe catalyst for 20 min. High-resolution transmission electron microscopy analysis confirmed that the metal-supported FLG fabricated via microwave-assisted catalytic graphitization consisted of 3–6 layers of graphene nanosheets. In addition, the 2D band at 2700 cm−1 in the Raman spectrum of the fabricated metal-supported FLG samples were observed, which indicated the presence of few-layer graphene structure. Furthermore, a mechanism was proposed for the microwave-assisted catalytic graphitization of bituminous coal. Here, we developed a cost-effective and environmental friendly metal-supported FLG method using a coal-based carbonaceous material.


2000 ◽  
Vol 623 ◽  
Author(s):  
N.D. Zakharov ◽  
A.R. James ◽  
A. Pignolet ◽  
S. Senz ◽  
D. Hesse

AbstractEpitaxial, ferroelectric Ba2Bi4Ti5O18 films grown on LaNiO3/CeO2/ZrO2:Y2O3 epitaxial layers on Si(100) are investigated by cross-section high-resolution transmission electron microscopy (HRTEM). The films are perfectly oriented and consist of well-developed grains of rectangular shape. The grain boundaries are strained and contain many defects, especially a new type of defect, which can be described as a staircase formed by repeated lattice shifts of Δ ∼ c/12 ∼ 4.2 Å in the [001] direction. This repeated shift results in seemingly bent ribbons of stacked Bi2O2 planes, involving, however, individual Bi2O2 planes which remain strongly parallel to the (001) plane. These defects contain an excess of bismuth. Other defects found in the grain interior include mistakes in the stacking sequence originating from the presence of single, well-oriented, non-stoichionietric layers intergrown with the stoichiometric Ba2Bi4Ti5O18 film matrix.


Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 377 ◽  
Author(s):  
Gabriela Tubon Usca ◽  
Cristian Vacacela Gomez ◽  
Marco Guevara ◽  
Talia Tene ◽  
Jorge Hernandez ◽  
...  

A novel method is presented to prepare few-layer graphene (FLG) in N-methyl-2-pyrrolidinone (NMP) by using a simple, low-cost and energy-effective shear exfoliation assisted by zeolite and using a cappuccino mixer to produce shear. We propose that the exfoliation of natural graphite flakes can be achieved using inelastic collisions between graphite flakes and zeolite particles in a dynamic colloidal fluid. To confirm the exfoliation of FLG, spectroscopy and morphological studies are carried out using Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Additionally, the obtained graphene shows a linear flow of current and low resistance. The proposed method shows great promise for the industrial-scale synthesis of high-quality graphene with potential applications in future graphene-based devices, and furthermore, this method can be extended to exfoliate inorganic layered materials such as BN and MoS2.


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