Lattice Defects in Epitaxial Ba2Bi4Ti5O18 Thin Films Grown by Pulsed Laser Deposition Onto LaNiO3 Bottom Electrodes

2000 ◽  
Vol 623 ◽  
Author(s):  
N.D. Zakharov ◽  
A.R. James ◽  
A. Pignolet ◽  
S. Senz ◽  
D. Hesse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Stacking Sequence ◽  
Rectangular Shape ◽  
Transmission Electron ◽  
Single Well ◽  
New Type

AbstractEpitaxial, ferroelectric Ba2Bi4Ti5O18 films grown on LaNiO3/CeO2/ZrO2:Y2O3 epitaxial layers on Si(100) are investigated by cross-section high-resolution transmission electron microscopy (HRTEM). The films are perfectly oriented and consist of well-developed grains of rectangular shape. The grain boundaries are strained and contain many defects, especially a new type of defect, which can be described as a staircase formed by repeated lattice shifts of Δ ∼ c/12 ∼ 4.2 Å in the [001] direction. This repeated shift results in seemingly bent ribbons of stacked Bi2O2 planes, involving, however, individual Bi2O2 planes which remain strongly parallel to the (001) plane. These defects contain an excess of bismuth. Other defects found in the grain interior include mistakes in the stacking sequence originating from the presence of single, well-oriented, non-stoichionietric layers intergrown with the stoichiometric Ba2Bi4Ti5O18 film matrix.

Growth of TiN/AlN Superlattice by Pulsed Laser Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
H. Wang ◽  
A. Gupta ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Layer By Layer ◽  
Special Configuration ◽  
Transmission Electron

ABSTRACTTiN-AlN binary-components have attracted a lot of interests in coatings of high speed cutting tools, due to their higher oxidation resistance, higher hardness, lower internal stresses and better adhesion. Especially, nanometer-scale multilayer structures of AlN/TiN show superior structural and mechanical properties due to their tremendous interface area and become one of the promising candidates for superhard coatings. Here we present a novel method to grow highly aligned TiN/AlN superlattice by pulsed laser deposition. In this method TiN and AlN targets are arranged in a special configuration that they can be ablated in sequence, giving alternate layer by layer growth of TiN(1nm)/AlN(4nm). X-ray diffraction and transmission electron microscopy (TEM) analysis showed the structure to be cubic for both TiN and AlN in the nanoscale multilayers. Microstructure and uniformity for the superlattice structure were studied by TEM and Scanning transmission electron microscopy with Z-contrast (STEM). Nanoindentation results indicated a higher hardness for this new structure than pure AlN and rule-of-mixtures value. Four point probe electrical resistivity measurements showed overall insulating behavior.

(111)p microtwinning in SrRuO3 thin films on (001)p LaAlO3

2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zone Axis ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.

scholarly journals Scanning and Transmission Electron Microscopy Studies of Alkali Halides Films Grown by Pulsed Laser Deposition

2013 ◽  
Vol 19 (S2) ◽  
pp. 1588-1589
Author(s):  
D.R. Acosta ◽  
E. Mejia ◽  
C. Sanchez ◽  
J. Martinez ◽  
C. Magana
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Alkali Halides ◽  
Laser Deposition ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Atomic and Electronic Structures of Cu/Sapphire Interfaces by HRTEM and EELS Analyses

2005 ◽  
Vol 475-479 ◽  
pp. 3859-3862 ◽  
Author(s):  
Takeo Sasaki ◽  
Teruyasu Mizoguchi ◽  
Katsuyuki Matsunaga ◽  
Shingo Tanaka ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Electronic Structures ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Transmission Electron ◽  
Electron Energy Loss

Interfacial atomic and electronic structures of Cu/Al2O3(0001) and Cu/Al2O3(11 ＿ ,20) prepared by a pulsed-laser deposition technique were characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy-loss spectroscopy (EELS). It was found that both systems have O-terminated interfaces, irrespective of different substrate orientations. This indicates that Cu-O interactions across the interface play an important role for the Cu/Al2O3 systems.

Sign in / Sign up

Export Citation Format

Share Document