Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Nano Letters ◽  
2009 ◽  
Vol 9 (4) ◽  
pp. 1636-1643 ◽  
Author(s):  
Yu Chao Yang ◽  
Feng Pan ◽  
Qi Liu ◽  
Ming Liu ◽  
Fei Zeng
Keyword(s):  
Room Temperature ◽  
High Density ◽  
Resistive Memory

Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications

2015 ◽  
Vol 202 ◽  
pp. 28-34 ◽  
Author(s):  
Muhammad Ismail ◽  
Anwar Manzoor Rana ◽  
Ijaz Talib ◽  
Tsung-Ling Tsai ◽  
Umesh Chand ◽  
...  
Keyword(s):  
Room Temperature ◽  
Resistive Memory

scholarly journals Experimental and Numerical Investigation of the ECAP Processed Copper: Microstructural Evolution, Crystallographic Texture and Hardness Homogeneity

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 607
Author(s):  
A. I. Alateyah ◽  
Mohamed M. Z. Ahmed ◽  
Yasser Zedan ◽  
H. Abd El-Hafez ◽  
Majed O. Alawad ◽  
...  
Keyword(s):  
Grain Size ◽  
Equal Channel Angular Pressing ◽  
Cross Section ◽  
Room Temperature ◽  
Pure Copper ◽  
High Density ◽  
Ecap Processing ◽  
Heterogeneous Distribution ◽  
Angular Pressing ◽  
Average Grain Size

The current study presents a detailed investigation for the equal channel angular pressing of pure copper through two regimes. The first was equal channel angular pressing (ECAP) processing at room temperature and the second was ECAP processing at 200 °C for up to 4-passes of route Bc. The grain structure and texture was investigated using electron back scattering diffraction (EBSD) across the whole sample cross-section and also the hardness and the tensile properties. The microstructure obtained after 1-pass at room temperature revealed finer equiaxed grains of about 3.89 µm down to submicrons with a high density of twin compared to the starting material. Additionally, a notable increase in the low angle grain boundaries (LAGBs) density was observed. This microstructure was found to be homogenous through the sample cross section. Further straining up to 2-passes showed a significant reduction of the average grain size to 2.97 µm with observable heterogeneous distribution of grains size. On the other hand, increasing the strain up to 4-passes enhanced the homogeneity of grain size distribution. The texture after 4-passes resembled the simple shear texture with about 7 times random. Conducting the ECAP processing at 200 °C resulted in a severely deformed microstructure with the highest fraction of submicron grains and high density of substructures was also observed. ECAP processing through 4-passes at room temperature experienced a significant increase in both hardness and tensile strength up to 180% and 124%, respectively.

scholarly journals Amorphous Metal Oxide Bilayers to Avoid Sneak‐Path Currents for High‐Density Resistive Memory Arrays

2021 ◽  
pp. 2000222
Author(s):  
Shruti Nirantar ◽  
Md Ataur Rahman ◽  
Edwin Mayes ◽  
Madhu Bhaskaran ◽  
Sumeet Walia ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Amorphous Metal ◽  
High Density ◽  
Resistive Memory ◽  
Memory Arrays ◽  
Amorphous Metal Oxide

Development of Toughened, Fine Grained, Recrystallized W-1.1%TiC

2021 ◽  
Vol 1024 ◽  
pp. 103-109
Author(s):  
Shunsuke Makimura ◽  
Hiroaki Kurishita ◽  
Koichi Niikura ◽  
Hun Chea Jung ◽  
Hiroyuki Ishizaki ◽  
...  
Keyword(s):  
Melting Point ◽  
Low Temperature ◽  
Fracture Strength ◽  
Room Temperature ◽  
Target Material ◽  
High Density ◽  
High Melting ◽  
High Melting Point ◽  
Irradiation Embrittlement ◽  
Fine Grained

Tungsten (W) is a principal candidate as target material because of its high density and extremely high melting point. W inherently has a critical disadvantage of its brittleness at around room temperature (low temperature brittleness), recrystallization embrittlement, and irradiation embrittlement. TFGR (Toughened, Fine Grained, Recrystallized) W-1.1%TiC has been considered as a realized solution to the embrittlement problems. We started to fabricate TFGR W-1.1%TiC in 2016 under collaboration between KEK and Metal Technology Co. LTD (MTC). The TFGR W-1.1%TiC samples were successfully fabricated in June, 2018. As a result, the specimen showed slight bend ductility and 2.6 GPa of fracture strength.

Effect of Electron Scavenger on the γ-Radiolysis of Gaseous Propane at High Densities

1973 ◽  
Vol 51 (23) ◽  
pp. 3966-3969 ◽  
Author(s):  
Masaru Nishikawa ◽  
Yoh-ichi Yamaguchi ◽  
Kazuo Fujita ◽  
Kazunori Kon ◽  
Tetsuro Okamoto
Keyword(s):  
Liquid Phase ◽  
Room Temperature ◽  
High Density ◽  
Hydrogen Formation ◽  
Electron Pairs ◽  
Electron Scavenger ◽  
Similar Decrease

Hydrogen formation from γ-radiolysis of gaseous propane at 120 ± 1 °C was studied as the function of density in the range from 0.1 to 0.5 g/ml. G(H2) gradually decreased with density from 8.0 at 0.12 g/ml towards the liquid-phase value of 6.4 at room temperature. G(H2) in the presence of SF6 showed similar decrease from 3.9 to 3.0. The decrease was discussed in comparison to the abrupt drop in G-values from the radiolysis of ammonia at high density (11). The separation distances of ion–electron pairs were estimated from the analysis of the electron scavenging reaction.

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