Quantum-dot microlasers based on whispering gallery mode resonators

AbstractThe subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus, using conventional epitaxial structures and relatively simple post-growth processing methods, it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using III–V heterostructures grown on silicon.

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Luminescence from Erbium-Doped Gallium Nitride Thin Films

MRS Proceedings ◽

10.1557/proc-537-g11.1 ◽

1998 ◽

Vol 537 ◽

Author(s):

J. M. Zavadat ◽

Myo Thaik ◽

U. Hòmmerich ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

...

Keyword(s):

Thin Films ◽

Elevated Temperatures ◽

Light Emission ◽

Thermal Quenching ◽

Emission Spectra ◽

Light Emitting Devices ◽

Recent Developments ◽

Device Applications ◽

Er Doped

AbstractThe III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 μm) and infrared (at ∼ 1.54 μm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 Pm have been measured.

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Luminescence from Erbium-Doped Gallium Nitride Thin Films

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003616 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 926-932

Author(s):

J. M. Zavada ◽

Myo Thaik ◽

U. Hömmerich ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

...

Keyword(s):

Thin Films ◽

Elevated Temperatures ◽

Light Emission ◽

Thermal Quenching ◽

Emission Spectra ◽

Light Emitting Devices ◽

Recent Developments ◽

Device Applications ◽

Er Doped

The III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 µm) and infrared (at ∼ 1.54 µm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 µm have been measured.

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High-Q whispering gallery modes in pillar microcavities

Annales de Physique ◽

10.1051/anphys:2008023 ◽

2007 ◽

Vol 32 (2-3) ◽

pp. 123-126

Author(s):

Y.-R. Nowicki-Bringuier ◽

J. Claudon ◽

C. Böckler ◽

S. Reitzenstein ◽

M. Kamp ◽

...

Keyword(s):

Whispering Gallery Modes ◽

High Q ◽

Whispering Gallery

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Etch-eroded fiber coupler for whispering-gallery-mode excitation in high-Q silica microspheres

IEEE Photonics Technology Letters ◽

10.1109/68.803068 ◽

1999 ◽

Vol 11 (11) ◽

pp. 1429-1430 ◽

Cited By ~ 51

Author(s):

J.-P. Laine ◽

B.E. Little ◽

H.A. Haus

Keyword(s):

Whispering Gallery Mode ◽

Silica Microspheres ◽

High Q ◽

Whispering Gallery ◽

Fiber Coupler ◽

Mode Excitation

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High-Q optical whispering-gallery microresonators: precession approach for spherical mode analysis and emission patterns with prism couplers

Optics Communications ◽

10.1016/0030-4018(94)90603-3 ◽

1994 ◽

Vol 113 (1-3) ◽

pp. 133-143 ◽

Cited By ~ 140

Author(s):

M.L. Gorodetsky ◽

V.S. Ilchenko

Keyword(s):

Mode Analysis ◽

High Q ◽

Whispering Gallery

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Ultrahigh electric and magnetic near field enhancement based on high-Q whispering gallery modes in subwavelength all-dielectric resonators

Applied Physics Express ◽

10.35848/1882-0786/ac10a8 ◽

2021 ◽

Author(s):

Xiao-Jing Du ◽

Zhong-Jian Yang ◽

Ma-Long Hu ◽

Lin Ma ◽

Jun He

Keyword(s):

Near Field ◽

Field Enhancement ◽

Whispering Gallery Modes ◽

Dielectric Resonators ◽

High Q ◽

Whispering Gallery

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Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning

Journal of Nanomaterials ◽

10.1155/2018/5684150 ◽

2018 ◽

Vol 2018 ◽

pp. 1-6

Author(s):

E. Kheirandish ◽

N. A. Kouklin ◽

J. Liang

Keyword(s):

Light Emission ◽

Electronic Devices ◽

Emission Spectra ◽

Temperature Dependent ◽

Physical Mechanisms ◽

Spectral Shifts ◽

Nanopore Arrays ◽

Bulk Gan ◽

Pl Emission ◽

Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is confirmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.

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