scholarly journals Enabling remote quantum emission in 2D semiconductors via porous metallic networks

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jose J. Fonseca ◽  
Andrew L. Yeats ◽  
Brandon Blue ◽  
Maxim K. Zalalutdinov ◽  
Todd Brintlinger ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Laser Excitation ◽  
Single Photon ◽  
Photon Emission ◽  
Metal Films ◽  
Single Photon Emitters ◽  
2D Semiconductors ◽  
Exciton Recombination ◽  
Plasmon Polaritons ◽  
Dimensional Crystal

AbstractHere we report how two-dimensional crystal (2DC) overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a reverse epitaxial process where initially nanocrystalline Au films gain texture, crystallographically orient with the 2D crystal overlayer, and form an oriented porous metallic network (OPEN) structure in which the 2DC can suspend above or coat the inside of the metal pores. Both laser excitation and exciton recombination in the 2DC semiconductor launch propagating SPPs in the OPEN film. Energy in-/out- coupling occurs at metal pore sites, alleviating the need for dielectric spacers between the metal and 2DC layer. At low temperatures, single-photon emitters (SPEs) are present across an OPEN-WSe2 film, and we demonstrate remote SPP-mediated excitation of SPEs at a distance of 17 μm.

scholarly journals Symmetry-tailored patterns and polarizations of single-photon emission

Nanophotonics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 3557-3565
Author(s):  
Guorui Zhang ◽  
Ying Gu ◽  
Qihuang Gong ◽  
Jianjun Chen
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Silver Nanowire ◽  
Emission Rates ◽  
Single Photon Emission ◽  
Emission Pattern ◽  
Single Photon Emitters ◽  
Resonant Modes ◽  
Oriented Dipole ◽  
Centrally Symmetric

AbstractDue to small optical mode volumes and linear polarizations of surface-plasmon-polariton (SPP) resonant modes in metallic antennas, it is very difficult to obtain complex emission patterns and polarizations for single-photon emitters. Herein, nonresonant enhancement in a silver nanowire is used to both enhance emission rates and extract a z-oriented dipole, and then the symmetry of metallic nanostructures is proposed to tailor the patterns and polarizations of single-photon emission. The emission pattern of a quantum dot located close to a metallic nanostructure with a symmetric axis is split into multiple flaps. The number of splitting flaps is equal to the order of the symmetric axis. Moreover, the electric vectors of the emitted photons become centrally symmetric about the symmetric axis. The above phenomena are well explained by both a simulation and an image dipole model. The structural-symmetry-tailoring mechanism may open up a new avenue in the design of multifunctional and novel quantum-plasmonic devices.

Optical Photoluminescence due to the Recombination of Donor-Acceptor Pairs in Porous Silicon

2000 ◽  
Vol 638 ◽  
Author(s):  
J. P. Zheng ◽  
X. Wei
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
High Temperatures ◽  
Thermal Energy ◽  
Low Temperatures ◽  
Ionization Energy ◽  
Photon Emission ◽  
Peak Wavelength ◽  
Exciton Recombination ◽  
Donor Acceptor

AbstractThe temperature dependence of the intensity, peak-wavelength, and bandwidth of photoluminescence (PL) spectra was studied in the porous silicon (PS) sample. To explain the observed temperature dependence, we proposed a model for the origin of the PL in PS. At low temperatures, the photon emission was dominated by the recombination of donor-acceptor pairs with ionization energies of about 4 meV. The donor and the acceptor were spatially separated with a distance of about 3.8 nm, which was about the crystalline size of the PS. Whereas at high temperatures where thermal energy exceeded the ionization energy, the photon emission was mainly from the exciton recombination.

scholarly journals Room-temperature single-photon emitters in titanium dioxide optical defects

2018 ◽  
Vol 9 ◽  
pp. 1085-1094 ◽  
Author(s):  
Kelvin Chung ◽  
Yu H Leung ◽  
Chap H To ◽  
Aleksandra B Djurišić ◽  
Snjezana Tomljenovic-Hanic
Keyword(s):  
Titanium Dioxide ◽  
Room Temperature ◽  
Single Photon ◽  
Photon Emission ◽  
Wide Bandgap ◽  
Single Photon Emission ◽  
Correlation Data ◽  
Single Photon Emitters ◽  
First Time ◽  
Photon Source

Fluorescence properties of crystallographic point defects within different morphologies of titanium dioxide were investigated. For the first time, room-temperature single-photon emission in titanium dioxide optical defects was discovered in thin films and commercial nanoparticles. Three-level defects were identified because the g (2) correlation data featured prominent shoulders around the antibunching dip. Stable and blinking photodynamics were observed for the single-photon emitters. These results reveal a new room-temperature single-photon source within a wide bandgap semiconductor.

Single Photon Emission from a Dendrimer Containing Eight Perylene Diimide Chromophores

2004 ◽  
Vol 57 (12) ◽  
pp. 1169 ◽  
Author(s):  
Toby D. M. Bell ◽  
Satoshi Habuchi ◽  
Sadahiro Masuo ◽  
Ingo Österling ◽  
Klaus Müllen ◽  
...  
Keyword(s):  
Single Molecule ◽  
Laser Excitation ◽  
Single Photon ◽  
Photon Emission ◽  
Perylene Diimide ◽  
Spectroscopic Techniques ◽  
Single Photon Emission ◽  
Coincidence Measurements ◽  
Photon Source ◽  
Triplet Lifetime

A novel dendrimer containing eight perylene diimide chromophores has been synthesized and studied by ensemble and single-molecule spectroscopic techniques. Photon anti-bunching (coincidence) measurements on single molecules embedded in zeonex polymer films show that the dendrimer behaves as a deterministic (triggered) single photon source with only one fluorescence photon being emitted following pulsed laser excitation, even when more than one chromophore is excited. This behaviour is due to efficient singlet–singlet annihilation being operative in this dendrimer. Preliminary results indicate that the triplet lifetime and yield for this molecule are similar to the values for a molecule containing a single perylene diimide chromophore.

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2020 ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Katja Barthelmi ◽  
Katherine Cochrane ◽  
Jonas Kiemle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

scholarly journals Single photon emission from plasma treated 2D hexagonal boron nitride

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7957-7965 ◽  
Author(s):  
Zai-Quan Xu ◽  
Christopher Elbadawi ◽  
Toan Trong Tran ◽  
Mehran Kianinia ◽  
Xiuling Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Plasma Etching ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Single Photon Emitters ◽  
Ar Plasma

Ar plasma etching and annealing are highly robust in generating oxygen related single photon emitters in hBN.

scholarly journals Substitutional impurities in monolayer hexagonal boron nitride as single-photon emitters

2020 ◽  
Vol 10 ◽  
pp. 184798042094934
Author(s):  
Michele Re Fiorentin ◽  
Kiptiemoi Korir Kiprono ◽  
Francesca Risplendi
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Defect States ◽  
Impurity Atoms ◽  
Single Photon Emitters ◽  
Substitutional Impurities

Single-photon emitters in hexagonal boron nitride have attracted great attention over the last few years due to their excellent optoelectronical properties. Despite the vast range of results reported in the literature, studies on substitutional impurities belonging to the 13th and 15th groups have not been reported yet. Here, through theoretical modeling, we provide direct evidence that hexagonal boron nitride can be opportunely modified by introducing impurity atoms such as aluminum or phosphorus that may work as color centers for single-photon emission. By means of density functional theory, we focus on determining the structural stability, induced strain, and charge states of such defects and discuss their electronic properties. Nitrogen substitutions with heteroatoms of group 15 are shown to provide attractive features (e.g. deep defect levels and localized defect states) for single-photon emission. These results may open up new possibilities for employing innovative quantum emitters based on hexagonal boron nitride for emerging applications in nanophotonics and nanoscale sensing devices.

scholarly journals Purification of single-photon emission from hBN using post-processing treatments

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 2049-2055 ◽  
Author(s):  
Chi Li ◽  
Zai-Quan Xu ◽  
Noah Mendelson ◽  
Mehran Kianinia ◽  
Milos Toth ◽  
...  
Keyword(s):  
Quantum Information Processing ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Chemical Vapor ◽  
Material System ◽  
Single Photon Emission ◽  
Large Area ◽  
Single Photon Emitters ◽  
On Chip

AbstractSingle-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising components for on-chip quantum information processing. Recently, large-area hBN films prepared by chemical vapor deposition (CVD) were found to host uniform, high densities of SPEs. However, the purity of these emitters has, to date, been low, hindering their applications in practical devices. In this work, we present two methods for post-growth processing of hBN, which significantly improve SPEs in hBN films that had been transferred from substrates used for CVD. The emitters exhibit high photon purities in excess of 90% and narrow linewidths of ~3 nm at room temperature. Our work lays a foundation for producing high-quality emitters in an ultra-compact two-dimensional material system and paves the way for deployment of hBN SPEs in scalable on-chip photonic and quantum devices.

scholarly journals InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 759
Author(s):  
Paweł Wyborski ◽  
Anna Musiał ◽  
Paweł Mrowiński ◽  
Paweł Podemski ◽  
Vasilij Baumann ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Bragg Reflector ◽  
Spectral Lines ◽  
Distributed Bragg Reflector ◽  
The Third ◽  
Photonic Structures ◽  
Single Photon Emitters ◽  
Quantum Dashes ◽  
Telecommunication Window

We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications.

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Ana Micevic ◽  
Daniel Hernangómez-Pérez ◽  
Katja Barthelmi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

AbstractFor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

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