scholarly journals Overcoming the exciton binding energy in two-dimensional perovskite nanoplatelets by attachment of conjugated organic chromophores

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
María C. Gélvez-Rueda ◽  
Magnus B. Fridriksson ◽  
Rajeev K. Dubey ◽  
Wolter F. Jager ◽  
Ward van der Stam ◽  
...  
2020 ◽  
Vol 13 (6) ◽  
Author(s):  
S. Ahmad ◽  
M. Zubair ◽  
O. Jalil ◽  
M. Q. Mehmood ◽  
U. Younis ◽  
...  

1990 ◽  
Vol 04 (15n16) ◽  
pp. 2345-2356
Author(s):  
Y. FU ◽  
K. A. CHAO

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.


2021 ◽  
Author(s):  
Mi Hee Jung

Two dimensional (2D) perovskites have a large exciton binding energy due to the structure of the quantum confinement, which produces a faster radiative recombination, so it is a promising potential...


2010 ◽  
Vol 24 (18) ◽  
pp. 3501-3511
Author(s):  
MENG-DONG HE ◽  
LING-LING WANG ◽  
WEI-QING HUANG ◽  
BING-SOU ZOU ◽  
KE-QIU CHEN

The characteristics of the localized Wannier exciton in defect layer (GaAs) embedded between two semi-infinite superlattices (GaAs/Al x Ga 1-x As ) are investigated theoretically using a variational approach. It can be clearly seen the exciton changes in character between three- and quasi-two-dimensional states from the variation of exciton binding energy, in-plane radius, and probability in the superlattices (SLs) growth direction. We find that the extensions of exciton in directions both parallel and perpendicular to the interface of SLs almost approach their minimums as the exciton binding energy reaches peak value at a certain defect width. Our results show that the binding energy of the ground exciton state is sensitive to Al concentration x in Al x Ga 1-x As and thicknesses of the constituent layers. The comparison between excitonic behavior in structural defect SLs and single quantum well is made.


2019 ◽  
Vol 10 (12) ◽  
pp. 3459-3464 ◽  
Author(s):  
Szymon J. Zelewski ◽  
Katarzyna C. Nawrot ◽  
Andrzej Zak ◽  
Marta Gladysiewicz ◽  
Marcin Nyk ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document