scholarly journals Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Elena Alexandra Serban ◽  
Justinas Palisaitis ◽  
Chia-Cheng Yeh ◽  
Hsu-Cheng Hsu ◽  
Yu-Lin Tsai ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Mode ◽  
Selective Area Growth ◽  
Reactive Magnetron ◽  
Selective Area ◽  
Area Growth ◽  
Magnetron Sputter

Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates

2014 ◽  
Vol 386 ◽  
pp. 107-112 ◽  
Author(s):  
Kate J. Norris ◽  
Junce Zhang ◽  
David M. Fryauf ◽  
Gary A. Gibson ◽  
Steven J. Barcelo ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Single Crystal ◽  
Nanoimprint Lithography ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Nanopillar Arrays

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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