Self-assembled and selective-area growth of GaN nanorods by liquid-target reactive magnetron sputter epitaxy (Conference Presentation)

ABSTRACTWe have developed a selective-area-growth (SAG) method of self-assembled InAs quantum dots (QDs) using a metal-mask (MM) combined with molecular beam epitaxy for realizing photonic crystal (PC) based ultra-small and ultra-fast all-optical devices (PC-SMZ and PC-FF). Successful SAG of QDs was confirmed by atomic-force-microscopy observations and photoluminescence (PL) measurements. High density and high uniformity comparable to those of conventional QDs grown without the MM were achieved; the QD density was 4 × 1010cm-2 and a linewidth of the PL peak was around 30meV at room temperature. In addition, insertion of a strain-reducing layer on the grown QD was effective for varying the PL peak wavelength of the QD from 1240nm to 1320nm without any extra optical degradation. The MM method reported here is promising for achieving the all optical devices, PC-SMZ and PC-FF, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.

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ORDERED GAN/INGAN NANORODS ARRAYS GROWN BY MOLECULAR BEAM EPITAXY FOR PHOSPHOR-FREE WHITE LIGHT EMISSION

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156412500103 ◽

2012 ◽

Vol 21 (01) ◽

pp. 1250010 ◽

Cited By ~ 7

Author(s):

S. ALBERT ◽

A. BENGOECHEA-ENCABO ◽

M.A. SANCHEZ-GARCÍA ◽

F. BARBAGINI ◽

E. CALLEJA ◽

...

Keyword(s):

Molecular Beam ◽

Light Emission ◽

Optical Emission ◽

Optical Quality ◽

The Self ◽

Selective Area Growth ◽

Selective Area ◽

Quantum Disk ◽

Area Growth ◽

Self Assembled

The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111) . The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into self-assembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations.

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Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

Journal of Physics Conference Series ◽

10.1088/1742-6596/1851/1/012006 ◽

2021 ◽

Vol 1851 (1) ◽

pp. 012006

Author(s):

V O Gridchin ◽

R R Reznik ◽

K P Kotlyar ◽

A S Dragunova ◽

L N Dvoretckaia ◽

...

Keyword(s):

Optical Properties ◽

Selective Area Growth ◽

Si Substrates ◽

Gan Nanowires ◽

Selective Area ◽

Area Growth

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Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

Nanoscale Advances ◽

10.1039/d0na00999g ◽

2021 ◽

Author(s):

Pujitha Perla ◽

H. Aruni Fonseka ◽

Patrick Zellekens ◽

Russell Deacon ◽

Yisong Han ◽

...

Keyword(s):

Magnetic Fields ◽

Josephson Junctions ◽

Quantum Circuits ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Shadow Evaporation ◽

Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

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