scholarly journals Spin orbit torques induced magnetization reversal through asymmetric domain wall propagation in Ta/CoFeB/MgO structures

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Jiangwei Cao ◽  
Yifei Chen ◽  
Tianli Jin ◽  
Weiliang Gan ◽  
Ying Wang ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Łukasz Frąckowiak ◽  
Feliks Stobiecki ◽  
Gabriel David Chaves-O’Flynn ◽  
Maciej Urbaniak ◽  
Marek Schmidt ◽  
...  

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.


2020 ◽  
Vol 102 (2) ◽  
Author(s):  
R. Kohno ◽  
J. Sampaio ◽  
S. Rohart ◽  
A. Thiaville

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shubhankar Das ◽  
Ariel Zaig ◽  
Hariharan Nhalil ◽  
Liran Avraham ◽  
Moty Schultz ◽  
...  

AbstractSpin-orbit torques emerge as a promising method for manipulating magnetic configurations of spintronic devices. Here, we show that these torques can induce a magnetization reversal via domain wall propagation which may open new ways in developing novel spintronic devices and in particular in realizing high-density multi-level magnetic memory. Our devices are bi-layer heterostructures of Ni0.8Fe0.2 on top of β-Ta patterned in the form of two or three crossing ellipses which exhibit in the crossing area shape-induced biaxial and triaxial magnetic anisotropy, respectively. We demonstrate field-free switching between discrete remanent magnetic states of the structures by spin-orbit torques induced by flowing electrical current through one of the ellipses. We note switchings induced by the coupling between the ellipses where current flowing in one ellipse triggers a reversal in a neighboring ellipse which propagates from the center outwards. Numerical tools successfully simulate the observed coupling-induced switching using experimentally extracted parameters.


Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3403
Author(s):  
Luis C. C. Arzuza ◽  
Victor Vega ◽  
Victor M. Prida ◽  
Karoline O. Moura ◽  
Kleber R. Pirota ◽  
...  

Geometrically modulated magnetic nanowires are a simple yet efficient strategy to modify the magnetic domain wall propagation since a simple diameter modulation can achieve its pinning during the nanowire magnetization reversal. However, in dense systems of parallel nanowires, the stray fields arising at the diameter interface can interfere with the domain wall propagation in the neighboring nanowires. Therefore, the magnetic behavior of diameter-modulated nanowire arrays can be quite complex and depending on both short and long-range interaction fields, as well as the nanowire geometric dimensions. We applied the first-order reversal curve (FORC) method to bi-segmented Ni nanowire arrays varying the wide segment (45–65 nm diameter, 2.5–10.0 μm length). The FORC results indicate a magnetic behavior modification depending on its length/diameter aspect ratio. The distributions either exhibit a strong extension along the coercivity axis or a main distribution finishing by a fork feature, whereas the extension greatly reduces in amplitude. With the help of micromagnetic simulations, we propose that a low aspect ratio stabilizes pinned domain walls at the diameter modulation during the magnetization reversal. In this case, long-range axial interaction fields nucleate a domain wall at the nanowire extremities, while short-range ones could induce a nucleation at the diameter interface. However, regardless of the wide segment aspect ratio, the magnetization reversal is governed by the local radial stray fields of the modulation near null magnetization. Our findings demonstrate the capacity of distinguishing between complex magnetic behaviors involving convoluted interaction fields.


2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.


2021 ◽  
pp. 2100284
Author(s):  
Alejandro Jiménez ◽  
Esther Calle ◽  
Jose A. Fernandez-Roldan ◽  
Rafael P. del Real ◽  
Rastislav Varga ◽  
...  

2021 ◽  
Vol 118 (11) ◽  
pp. 112401
Author(s):  
Mahshid Alamdar ◽  
Thomas Leonard ◽  
Can Cui ◽  
Bishweshwor P. Rimal ◽  
Lin Xue ◽  
...  

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