scholarly journals How levelling and scan line corrections ruin roughness measurement and how to prevent it

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
David Nečas ◽  
Miroslav Valtr ◽  
Petr Klapetek
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Material Science ◽  
Mean Square ◽  
Roughness Measurement ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scan Line ◽  
Scale Roughness ◽  
Roughness Measurements

Abstract Surface roughness plays an important role in various fields of nanoscience and nanotechnology. However, the present practices in roughness measurements, typically based on some Atomic Force Microscopy measurements for nanometric roughness or optical or mechanical profilometry for larger scale roughness significantly bias the results. Such biased values are present in nearly all the papers dealing with surface parameters, in the areas of nanotechnology, thin films or material science. Surface roughness, most typically root mean square value of irregularities Sq is often used parameter that is used to control the technologies or to link the surface properties with other material functionality. The error in estimated values depends on the ratio between scan size and roughness correlation length and on the way how the data are processed and can easily be larger than 10% without us noting anything suspicious. Here we present a survey of how large is the problem, detailed analysis of its nature and suggest methods to predict the error in roughness measurements and possibly to correct them. We also present a guidance for choosing suitable scan area during the measurement.

Measuring Thickness Changes in Thin Films Due to Chemical Reaction by Monitoring the Surface Roughness with In Situ Atomic Force Microscopy

2002 ◽  
Vol 8 (5) ◽  
pp. 422-428 ◽  
Author(s):  
L.Y. Beaulieu ◽  
A.D. Rutenberg ◽  
J.R. Dahn
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Alloy Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Direct Proportionality ◽  
Roughness Measurements

Measuring the changing thickness of a thin film, without a reference, using an atomic force microscope (AFM) is problematic. Here, we report a method for measuring film thickness based on in situ monitoring of surface roughness of films as their thickness changes. For example, in situ AFM roughness measurements have been performed on alloy film electrodes on rigid substrates as they react with lithium electrochemically. The addition (or removal) of lithium to (or from) the alloy causes the latter to expand (or contract) reversibly in the direction perpendicular to the substrate and, in principle, the change in the overall height of these materials is directly proportional to the change in roughness. If the substrate on which the film is deposited is not perfectly smooth, a correction to the direct proportionality is needed and this is also discussed.

Surface roughness measurements of vanadium-contaminated fluidized cracking catalysts by atomic force microscopy

1996 ◽  
Vol 54 ◽  
pp. 866-867
Author(s):  
H. Kinney ◽  
M.L. Occelli ◽  
S.A.C. Gould
Keyword(s):  
Surface Roughness ◽  
Zeolite Y ◽  
Atomic Level ◽  
Microporous Structure ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Roughness Measurements ◽  
Cracking Catalysts

For this study we have used a contact mode atomic force microscope (AFM) to study to topography of fluidized cracking catalysts (FCC), before and after contamination with 5% vanadium. We selected the AFM because of its ability to well characterize the surface roughness of materials down to the atomic level. It is believed that the cracking in the FCCs occurs mainly on the catalysts top 10-15 μm suggesting that the surface corrugation could play a key role in the FCCs microactivity properties. To test this hypothesis, we chose vanadium as a contaminate because this metal is capable of irreversibly destroying the FCC crystallinity as well as it microporous structure. In addition, we wanted to examine the extent to which steaming affects the vanadium contaminated FCC. Using the AFM, we measured the surface roughness of FCCs, before and after contamination and after steaming.We obtained our FCC (GRZ-1) from Davison. The FCC is generated so that it contains and estimated 35% rare earth exchaged zeolite Y, 50% kaolin and 15% binder.

scholarly journals Atomic force microscopy comparative analysis of the surface roughness of two posterior chamber phakic intraocular lens models: ICL versus IPCL

2021 ◽  
Vol 21 (1) ◽  
Author(s):  
Juan Gros-Otero ◽  
Samira Ketabi ◽  
Rafael Cañones-Zafra ◽  
Montserrat Garcia-Gonzalez ◽  
Cesar Villa-Collar ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Intraocular Lenses ◽  
Posterior Chamber ◽  
Anterior Surface ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Phakic Intraocular Lenses ◽  
Roughness Measurements

Abstract Background To compare the anterior surface roughness of two commercially available posterior chamber phakic intraocular lenses (IOLs) using atomic force microscopy (AFM). Methods Four phakic IOLs were used for this prospective, experimental study: two Visian ICL EVO+ V5 lenses and two iPCL 2.0 lenses. All of them were brand new, were not previously implanted in humans, were monofocal and had a dioptric power of − 12 diopters (D). The anterior surface roughness was assessed using a JPK NanoWizard II® atomic force microscope in contact mode immersed in liquid. Olympus OMCL-RC800PSA commercial silicon nitride cantilever tips were used. Anterior surface roughness measurements were made in 7 areas of 10 × 10 μm at 512 × 512 point resolution. The roughness was measured using the root-mean-square (RMS) value within the given regions. Results The mean of all anterior surface roughness measurements was 6.09 ± 1.33 nm (nm) in the Visian ICL EVO+ V5 and 3.49 ± 0.41 nm in the iPCL 2.0 (p = 0.001). Conclusion In the current study, we found a statistically significant smoother anterior surface in the iPCL 2.0 phakic intraocular lenses compared with the VISIAN ICL EVO+ V5 lenses when studied with atomic force microscopy.

STUDY OF THE MORPHOLOGICAL MODIFICATIONS INDUCED BY LASER ANNEALING OF PREAMORPHIZED SILICON

2001 ◽  
Vol 08 (05) ◽  
pp. 441-445 ◽  
Author(s):  
Y. F. CHONG ◽  
K. L. PEY ◽  
Y. F. LU ◽  
A. T. S. WEE ◽  
A. SEE
Keyword(s):  
Surface Roughness ◽  
Laser Fluence ◽  
Laser Annealing ◽  
Periodic Structures ◽  
Threshold Fluence ◽  
High Fluence ◽  
Force Microscopy ◽  
Atomic Force ◽  
Laser Anneal ◽  
Roughness Measurements

Atomic force microscopy was employed to characterize the morphological modifications induced by laser annealing of preamorphized silicon. Laser irradiation was performed at different fluence with fixed pulse durations of 23 ns. In all cases, the laser fluence used is above the threshold fluence that is needed to melt the preamorphized layer. Roughness measurements show that the surface roughness of the silicon samples increases when the laser fluence increases. Since the laser anneal was performed in air, the changes in morphology may be associated with the surface oxide formed. When a high fluence was employed, the extension of melting was sufficient to remove all surface features of the as-implanted sample but apparently there was not enough time to completely redistribute the material upon solidification. As a result, ripple-like periodic structures are formed on the surface. Therefore, a low laser fluence should be used whenever possible in the annealing of silicon samples.

Physical Characterization of BST with Different (x’) Ratios

2014 ◽  
Vol 487 ◽  
pp. 106-109
Author(s):  
Nurhafizah Ramli ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
They Yee Chin ◽  
K. Anwar ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fields Of Study ◽  
Barium Strontium

Nowdays Barium strontium titanate (BST) can be applied into many fields of engineering. Its properties attracted more researchers to research and apply it into many fields of study. In this work, sol-gel method of preparing barium strontium titanate (BST) has been used. This work was done with 4 different ratio of x with 4 different deposition layers. The main purpose of this work is to investigate the relation between the ratio of barium (Ba) with different deposition layer and the surface of the substrate. Atomic force microscopy (AFM) was used in whole work to investigate the crystalline structure and surface roughness of the BST thin films.

WAVELET ANALYSIS OF SURFACE MORPHOLOGIES OF MAGNETRON SPUTTERED Al-Cu THIN FILMS

2009 ◽  
Vol 07 (01) ◽  
pp. 59-74
Author(s):  
GAURAV BHATNAGAR ◽  
R. JAYAGANTHAN ◽  
BALASUBRAMANIAN RAMAN
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Time ◽  
Signal Decomposition ◽  
Dc Magnetron Sputtering ◽  
Force Microscopy ◽  
Atomic Force ◽  
Experimental Values ◽  
Surface Morphologies ◽  
Wavelet Technique

Al - Cu thin films were deposited by DC magnetron sputtering. The films are characterized by atomic force microscopy and its surface morphologies are analyzed by wavelet technique. Multiresolution signal decomposition wavelet technique was employed to extract the surface roughness from the AFM images of Al - Cu thin films. It is observed that the Al - Cu thin films exhibit higher surface roughness value with increasing deposition time. The calculated surface roughness of the thin films, using wavelet technique, is comparable with that of its experimental values.

Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure

2009 ◽  
Vol 615-617 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Light Emission ◽  
Root Mean Square Roughness ◽  
Avalanche Breakdown ◽  
Mean Square ◽  
Electrical Field ◽  
Force Microscopy ◽  
Atomic Force

The Ti/4H-SiC Schottky barrier diodes with a field limiting ring (FLR) structure are fabricated. Two types of SBDs are prepared; one (SBD-A) is covered and another (SBD-B) isn’t covered with a carbon cap during high temperature annealing after ion implantation. The breakdown voltage at room temperature for SBD-A and SBD-B are 1400 V and 1000 V, respectively. The breakdown for both SBDs occurs due to an avalanche breakdown. The light emission images are obtained at the breakdown voltage by photo emission microscope (PEM). The light emission is observed along an FLR of the SBD-A as designed. On the other hand, the spot of light emission is observed on a FLR structure of the SBD-B. This light emission spot indicates that leakage current is concentrated because an electrical field concentration is generated at this one for the SBD-B. The root-mean-square roughness of the Al-implanted region on the FLR structure calculated from the atomic force microscopy (AFM) images for the SBD-A and the SBD-B are 0.697 nm and 5.58 nm, respectively. Therefore it is considered that large surface roughness on the FLR decreases breakdown voltage of SBD because an electrical field concentration is generated at a spot.

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