scholarly journals Structural evolution and phase transition mechanism of $$\hbox {MoSe}_2$$ under high pressure

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yifeng Xiao ◽  
Shi He ◽  
Mo Li ◽  
Weiguo Sun ◽  
Zhichao Wu ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Phonon Dispersion ◽  
Electronic Band Structure ◽  
Ambient Pressure ◽  
Structural Evolution ◽  
Ultrahigh Pressure ◽  
Ground State Structure ◽  
Electronic Band ◽  
Transition Mechanism

Abstract$$\hbox {MoSe}_2$$ MoSe 2 is a layered transition-metal dichalcogenide (TMD) with outstanding electronic and optical properties, which is widely used in field-effect transistor (FET). Here the structural evolution and phase transition of $$\hbox {MoSe}_2$$ MoSe 2 under high pressure are systematically studied by CALYPSO structural search method and first-principles calculations. The structural evolutions of $$\hbox {MoSe}_2$$ MoSe 2 show that the ground state structure under ambient pressure is the experimentally observed P6$$_3$$ 3 /mmc phase, which transfers to R3m phase at 1.9 GPa. The trigonal R3m phase of $$\hbox {MoSe}_2$$ MoSe 2 is stable up to 72.1 GPa, then, it transforms into a new P6$$_3$$ 3 /mmc phase with different atomic coordinates of Se atoms. This phase is extremely robust under ultrahigh pressure and finally changes to another trigonal R-3m phase under 491.1 GPa. The elastic constants and phonon dispersion curves indicate that the ambient pressure phase and three new high-pressure phases are all stable. The electronic band structure and projected density of states analyses reveal a pressure induced semiconducting to metallic transition under 72.1 GPa. These results offer a detailed structural evolution and phase diagram of $$\hbox {MoSe}_2$$ MoSe 2 under high pressure, which may also provide insights for exploration other TMDs under ultrahigh pressure.

PRESSURE-INDUCED METALLIZATION AND SUPERCONDUCTIVITY IN InP AND InN

2011 ◽  
Vol 25 (04) ◽  
pp. 573-587
Author(s):  
K. IYAKUTTI ◽  
V. REJILA ◽  
M. RAJARAJESWARI ◽  
C. NIRMALA LOUIS ◽  
S. MAHALAKSHMI
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Structural Phase Transition ◽  
Electronic Band Structure ◽  
Indium Nitride ◽  
Structural Phase ◽  
Superconducting Transition ◽  
Electronic Band ◽  
Zinc Blende ◽  
Lmto Method

The electronic band structure, structural phase transition, metallization and superconducting transition of cubic zinc blende-type indium phosphide ( InP ) and indium nitride ( InN ), under pressure, are studied using TB-LMTO method. These indium compounds become metals and superconductors under high pressure but before that they undergo structural phase transition from ZnS to NaCl structure. The ground-state properties and band gap values are compared with the experimental and previous theoretical results. From our analysis, it is found that the metallization pressure increases with increase of lattice constant. The superconducting transition temperatures (Tc) of InP and InN are obtained as a function of pressure for both the ZnS and NaCl structures and these compounds are identified as pressure-induced superconductors. When pressure is increased Tc increases in both the normal ( ZnS ) and high pressure ( NaCl ) structures. The dependence of Tc on electron–phonon mass enhancement factor λ shows that InP and InN are electron–phonon mediated superconductors. The non-occurrence of metallization, phase transition and onset of superconductivity simultaneously in InP and InN are confirmed.

BAND STRUCTURE, METALLIZATION AND SUPERCONDUCTIVITY OF InP AND InN UNDER HIGH PRESSURE

2012 ◽  
Vol 11 (01) ◽  
pp. 19-33 ◽  
Author(s):  
A. AMAL RAJ ◽  
C. NIRMALA LOUIS ◽  
V. REJILA ◽  
K. IYAKUTTI
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Band Structure ◽  
Structural Phase Transition ◽  
Electronic Band Structure ◽  
Indium Nitride ◽  
Structural Phase ◽  
Superconducting Transition ◽  
Electronic Band ◽  
Lmto Method

The electronic band structure, structural phase transition, metallization and superconducting transition of cubic zinc blende type indium phosphide (InP) and indium nitride (InN), under pressure, are studied using FP-LMTO method. These indium compounds become metals and superconductors under high pressure but before that they undergo structural phase transition from ZnS to NaCl structure. The ground state properties and band gap values are compared with the experimental and previous theoretical results. From our analysis, it is found that the metallization pressure increases with increase of lattice constant. The superconducting transition temperatures (Tc) of InP and InN are obtained as a function of pressure for both the ZnS and NaCl structures and these compounds are identified as pressure induced superconductors. When pressure is increased Tc increases in both the normal ( ZnS ) and high pressure ( NaCl ) structures. The dependence of Tc on electron–phonon mass enhancement factor λ shows that InP and InN are electron–phonon mediated superconductors. The non-occurrence of metallization, phase transition and onset of superconductivity simultaneously in InP and InN is confirmed.

BAND STRUCTURE, METALLIZATION, AND SUPERCONDUCTIVITY OF GaAs AND InAs UNDER HIGH PRESSURE

2007 ◽  
Vol 06 (04) ◽  
pp. 833-843 ◽  
Author(s):  
A. AMALRAJ ◽  
C. NIRMALA LOUIS ◽  
SR. GERARDIN JAYAM
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Band Structure ◽  
Structural Phase Transition ◽  
Electronic Band Structure ◽  
Structural Phase ◽  
Normal Structure ◽  
Superconducting Transition ◽  
Electronic Band ◽  
Phase Transition Pressure

The electronic band structure, metallization, structural phase transition, and superconductivity of cubic zinc blende type GaAs and InAs are investigated. The equilibrium lattice constant, bulk modulus, and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) get enhanced after metallization, which leads to the superconductivity in GaAs and InAs . The superconducting transition temperatures (T c ) of GaAs and InAs are obtained as a function of pressure for both the ZnS and NaCl structures. GaAs and InAs come under the class of pressure-induced superconductors. When pressure is increased T c increases in both the normal and high pressure-structures. The dependence of T c on electron–phonon mass enhancement factor λ shows that GaAs and InAs are electron–phonon-mediated superconductors. Also, it is found that GaAs and InAs retained in their normal structure under high pressure give appreciably high T c .

Ab-Initio Investigation of Strain Effects on the Physical Properties of PdVTe Alloy

2021 ◽  
Author(s):  
Khodja Djamila ◽  
Djaafri Tayeb ◽  
Djaafri Abdelkader ◽  
Bendjedid Aicha ◽  
Hamada Khelifa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Density Of States ◽  
Phonon Dispersion ◽  
Electronic Band Structure ◽  
Debye Model ◽  
Full Potential ◽  
Electronic Band ◽  
Metallic Behavior ◽  
Strain Effects ◽  
Half Metallic

The investigations of the strain effects on magnetism, elasticity, electronic, optical and thermodynamic properties of PdVTe half-Heusler alloy are carried out using the most accurate methods to electronic band structure, i.e. the full-potential linearized augmented plane wave plus a local orbital (FP-LAPW + lo) approach. The analysis of the band structures and the density of states reveals the Half-metallic behavior with a small indirect band gap Eg of 0.51 eV around the Fermi level for the minority spin channels. The study of magnetic properties led to the predicted value of total magnetic moment µtot = 3µB, which nicely follows the Slater–Pauling rule µtot = Zt -18. Several optical properties are calculated for the first time and the predicted values are in line with the Penn model. It is shown from the imaginary part of the complex dielectric function that the investigated alloy is optically metallic. The variations of thermodynamic parameters calculated using the quasi-harmonic Debye model, accord well with the results predicted by the Debye theory. Moreover, the dynamical stability of the investigated alloy is computed by means of the phonon dispersion curves, the density of states, and the formation energies. Finally, the analysis of the strain effects reveals that PdVTe alloy preserves its ferromagnetic half metallic behavior, it remains mechanically stable, the ionic nature dominates the atomic bonding, and the thermodynamic and the optical properties keep the same features in a large interval of pressure.

scholarly journals Normal-to-topological insulator martensitic phase transition in group-IV monochalcogenides driven by light

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Jian Zhou ◽  
Shunhong Zhang ◽  
Ju Li
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Electronic Band Structure ◽  
Dielectric Medium ◽  
Group Iv ◽  
Electronic Band ◽  
Optical Responses ◽  
Martensitic Phase Transition ◽  
Linearly Polarized ◽  
Frequency Power

AbstractA material potentially exhibiting multiple crystalline phases with distinct optoelectronic properties can serve as a phase-change memory material. The sensitivity and kinetics can be enhanced when the two competing phases have large electronic structure contrast and the phase change process is diffusionless and martensitic. In this work, we theoretically and computationally illustrate that such a phase transition could occur in the group-IV monochalcogenide SnSe compound, which can exist in the quantum topologically trivial Pnma-SnSe and nontrivial $$Fm\bar 3m$$Fm3¯m-SnSe phases. Furthermore, owing to the electronic band structure differences of these phases, a large contrast in the optical responses in the THz region is revealed. According to the thermodynamic theory for a driven dielectric medium, optomechanical control to trigger a topological phase transition using a linearly polarized laser with selected frequency, power and pulse duration is proposed. We further estimate the critical optical electric field to drive a barrierless transition that can occur on the picosecond timescale. This light actuation strategy does not require fabrication of mechanical contacts or electrical leads and only requires transparency. We predict that an optically driven phase transition accompanied by a large entropy difference can be used in an “optocaloric” cooling device.

PRESSURE-INDUCED ELECTRONIC PHASE TRANSITIONS AND SUPERCONDUCTIVITY IN TITANIUM

2009 ◽  
Vol 23 (05) ◽  
pp. 723-741 ◽  
Author(s):  
K. IYAKUTTI ◽  
C. NIRMALA LOUIS ◽  
S. ANURATHA ◽  
S. MAHALAKSHMI
Keyword(s):  
High Pressure ◽  
Band Structure ◽  
Fermi Surface ◽  
High Pressures ◽  
Ambient Pressure ◽  
Structural Phase ◽  
Normal Pressure ◽  
Orbital Method ◽  
Superconducting Transition ◽  
Electronic Band

The electronic band structure, density of states, structural phase transition, superconducting transition and Fermi surface cross section of titanium ( Ti ) under normal and high pressures are reported. The high pressure band structure exhibits significant deviations from the normal pressure band structure due to s → d transition. On the basis of band structure and total energy results obtained using tight-binding linear muffin-tin orbital method (TB LMTO), we predict a phase transformation sequence of α( hcp ) → ω (hexagonal) → γ (distorted hcp) → β (bcc) in titanium under pressure. From our analysis, we predict a δ (distorted bcc) phase which is not stable at any high pressures. At ambient pressure, the superconducting transition occurs at 0.354 K. When the pressure is increased, it is predicted that, Tc increases at a rate of 3.123 K/Mbar in hcp–Ti . On further increase of pressure, Tc begins to decrease at a rate of 1.464 K/Mbar. The highest value of Tc(P) estimated is 5.043 K for hcp–Ti , 4.538 K for ω– Ti and 4.85 K for bcc – Ti . From this, it is inferred that the maximum value of Tc(P) is rather insensitive to the crystal structure of Ti . The nonlinearities in Tc(P) is explained by considering the destruction and creation of new parts of Fermi surface at high pressure. At normal pressure, the hardness of Ti is in the following order: ω- Ti > hcp - Ti > bcc- Ti > γ- Ti .

A tetragonal polymorph of SrMn2P2made under high pressure – theory and experiment in harmony

2017 ◽  
Vol 46 (21) ◽  
pp. 6835-6838 ◽  
Author(s):  
Weiwei Xie ◽  
Michał J. Winiarski ◽  
Tomasz Klimczuk ◽  
R. J. Cava
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Tetragonal Phase ◽  
Ambient Pressure ◽  
Structure Type ◽  
Space Group ◽  
Type Space ◽  
Tetragonal Phase Transition ◽  
Theory And Experiment

A trigonal–tetragonal phase transition in SrMn2P2is proposed and confirmed experimentally under high pressure. At ambient pressure, SrMn2P2crystallizes in the primitive trigonal La2O3structure type (space groupP3̄m1) in blue. Under high pressure, the tetragonal ThCr2Si2structure type (space groupI4/mmm) in red is more stable.

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