Modeling of abnormal grain growth in (111) oriented and nanotwinned copper

AbstractUni-modal, not bi-modal, of abnormal grain growth has been observed in (111) oriented and nano-twinned Cu films. Because of the highly anisotropic microstructure, our kinetic analysis and calculation showed that it is the mobility which dominates the uni-modal growth, in which the lateral growth rate can be two orders of magnitude higher than the vertical growth rate. As a consequence, the abnormal grain growth has been converted from bi-modal to uni-modal.

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Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process

MRS Proceedings ◽

10.1557/proc-537-g4.5 ◽

1998 ◽

Vol 537 ◽

Cited By ~ 10

Author(s):

H. Marchand ◽

J.P. Ibbetson ◽

P.T. Fini ◽

X.H. Wu ◽

S. Keller ◽

...

Keyword(s):

Growth Rate ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Growth Conditions ◽

Lateral Growth ◽

Lateral Epitaxial Overgrowth ◽

Step Process ◽

Vertical Growth Rate ◽

Lateral Growth Rate

AbstractWe demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <1010>-oriented stripes is initiated at a low V/II1 ratio to produce smooth, vertical {1120} sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the {1101} facets is inhibited using this two-step process, and that it is possible to maintain the {1120} sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.

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Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s109257830000288x ◽

1999 ◽

Vol 4 (S1) ◽

pp. 453-458 ◽

Cited By ~ 2

Author(s):

H. Marchand ◽

J.P. Ibbetson ◽

P.T. Fini ◽

X.H. Wu ◽

S. Keller ◽

...

Keyword(s):

Growth Rate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Growth Conditions ◽

Lateral Growth ◽

Lateral Epitaxial Overgrowth ◽

Step Process ◽

Vertical Growth Rate ◽

Lateral Growth Rate ◽

Image Position

We demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <100>-oriented stripes is initiated at a low V/III ratio to produce smooth, vertical <110> sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the <101> facets is inhibited using this two-step process, and that it is possible to maintain the <110> sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.

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Power law of molecular weight dependence of lateral growth rate of isotactic polypropylene

Polymer ◽

10.1016/j.polymer.2006.07.077 ◽

2006 ◽

Vol 47 (21) ◽

pp. 7601-7606 ◽

Cited By ~ 7

Author(s):

Koji Yamada ◽

Kaori Watanabe ◽

Kiyoka Okada ◽

Akihiko Toda ◽

Masamichi Hikosaka

Keyword(s):

Molecular Weight ◽

Growth Rate ◽

Power Law ◽

Isotactic Polypropylene ◽

Lateral Growth ◽

Molecular Weight Dependence ◽

Lateral Growth Rate

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Effects of the lateral growth rate on wood quality parameters of Eucalyptus grandis from different latitudes in Brazil and Argentina

Forest Ecology and Management ◽

10.1016/j.foreco.2009.02.026 ◽

2009 ◽

Vol 257 (10) ◽

pp. 2175-2181 ◽

Cited By ~ 9

Author(s):

Miho Kojima ◽

Fabio Minoru Yamaji ◽

Hiroyuki Yamamoto ◽

Masato Yoshida ◽

Takahisa Nakai

Keyword(s):

Growth Rate ◽

Wood Quality ◽

Eucalyptus Grandis ◽

Quality Parameters ◽

Lateral Growth ◽

Lateral Growth Rate

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Estimating Lateral Growth Rate of a Particulate Plume

Journal of Applied Meteorology ◽

10.1175/1520-0450(1968)007<0947:elgroa>2.0.co;2 ◽

1968 ◽

Vol 7 (5) ◽

pp. 947-950

Author(s):

Robert E. Stewart

Keyword(s):

Growth Rate ◽

Lateral Growth ◽

Lateral Growth Rate

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Growth and Characterization of Gan Bulk Crystals Via Vapor Phase Transport

MRS Proceedings ◽

10.1557/proc-639-g3.54 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 1

Author(s):

H. Shin ◽

D. B. Thomson ◽

P. Q. Miraglia ◽

S. D. Wolter ◽

R. Schlesser ◽

...

Keyword(s):

Growth Rate ◽

Vapor Phase ◽

Ammonia Nitrogen ◽

Direct Reaction ◽

Lateral Growth ◽

Seeded Growth ◽

Free Standing ◽

Vapor Phase Transport ◽

Lateral Growth Rate ◽

Phase Transport

ABSTRACTFree-standing single crystals of bulk GaN were grown via unseeded vapor phase transport at 1130°C on hexagonal BN surfaces via direct reaction of Ga with ammonia. The number of nucleation events was reduced and the crystal size increased by introducing the ammonia at high temperatures. The resulting crystals were either needles or platelets depending on the process variables employed. Low V/III ratios achieved via ammonia flow rates ≤ 75sccm and/or ammonia total pressures ≤ 430Torr favored lateral growth. The average lateral growth rate for the platelets was ∼50μm/hr; the average vertical growth rate for the needles was ∼500μm/hr. Growth rates in all other directions for each of these two morphologies were very low. Seeded growth of both needle and platelet crystals was also achieved; however, the growth rate decreased at longer times and higher pressures due to reaction with H2 from the increased decomposition of ammonia. Nitrogen dilution suppressed this decomposition. A 2mm × 1.5mm GaN crystal was grown with minimal decomposition in a 66.7%NH3 and 33.3%N2 gas mixture.

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Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE

MRS Proceedings ◽

10.1557/proc-1202-i05-12 ◽

2009 ◽

Vol 1202 ◽

Author(s):

Bei Ma ◽

Reina Miyagawa ◽

Hideto Miyake ◽

Kazumasa Hiramatsu

Keyword(s):

Growth Rate ◽

Cross Section ◽

Growth Temperature ◽

Selective Area Growth ◽

Key Technology ◽

Selective Area ◽

Area Growth ◽

Vertical Growth Rate ◽

Lateral Growth Rate ◽

Reactor Pressure

AbstractSelective area growth (SAG) of a-plane GaN grown on r-plane sapphire with a stripe orientation along <1-100> was investigated. The key technology of facet-control is optimizing the growth temperature and the reactor pressure. Our experiments reveal that the growth temperature determined facet form: in samples grown at 1000 °C, the structure consists of {11-22}and (000-1); with increasing growth temperature to 1050 °C, the area of {11-22} facet gradually decreases, and two new planes, (0001) and {11-20} facets form; eventually, in samples grown at 1000 oC, the {11-22} facet completely disappears, (0001) and {11-20} facet continue to increase to form a rectangle cross-section. The reactor pressure determines the ratio of the lateral growth rate and the vertical growth rate: with reactor pressure decreasing from 500 torr to 100 torr, the rectangle structure gradually decreases the height and increases the width, and the volume nearly keeps constant.

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