Controlling reaction paths for ultra-fast growth of inorganic nanowires floating in the gas phase

Nanoscale ◽  
2021 ◽  
Author(s):  
Richard S. Schäufele ◽  
Miguel Vazquez-Pufleau ◽  
Afshin Pendashteh ◽  
Juan J. Vilatela

Identification and understanding of selective growth parameters of 1D nanomaterials by floating catalysts chemical vapour deposition.

2001 ◽  
Vol 3 (17) ◽  
pp. 3471-3485 ◽  
Author(s):  
Michael N. R. Ashfold ◽  
Paul W. May ◽  
James R. Petherbridge ◽  
Keith N. Rosser ◽  
James A. Smith ◽  
...  

2001 ◽  
Vol 680 ◽  
Author(s):  
U. Forsberg ◽  
A. Henry ◽  
Ö. Danielsson ◽  
M.K. Linnarsson ◽  
E. Janzén

ABSTRACTWe have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made.


2015 ◽  
Vol 21 (9) ◽  
pp. 2887-2890 ◽  
Author(s):  
Mohd. Yaseen Lone ◽  
Avshish Kumar ◽  
Shama Parveen ◽  
Samina Husain ◽  
Mohammad Zulfequar ◽  
...  

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